Si3441DV
April 2001 PRELIMINARY
Si3441DV
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –3.5 A, –20 V. • Low gate charge • High performance trench technology for extremely low RDS(ON) RDS(ON) = 80 mΩ @ VGS = –4.5 V RDS(ON) = 110 mΩ @ VGS = –2.5 V
Applications
• Battery management • Load switch • Battery protection
D
D
S
1 2
G
6 5 4
SuperSOT TM -6
D
D
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
–20 ±8
(Note 1a)
Units
V V A W °C
–3.5 –20 1.6 0.8 –55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
Package Marking and Ordering Information
Device Marking .441 Device Si3441DV Reel Size 7’’ Tape width 8mm Quantity 3000 units
2001 Fairchild Semiconductor Corporation
Si3441DV Rev A (W)
Si3441DV
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 8 V, VGS = –8 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–12 –1 100 –100 mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –3.5 A VGS = –2.5 V, ID = –3.1 A VGS = –4.5 V, ID = –3.5A,TJ=125°C VGS = –4.5 V, VDS = –5 V VDS = –5 V, ID = –3.5 A
–0.4
–0.8 3 60 82 77
–1.5
V mV/°C
80 110 112
mΩ
ID(on) gFS
–10 11
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = –10 V, f = 1.0 MHz
V GS = 0 V,
779 121 56
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = –10 V, VGS = –4.5 V,
ID = –1 A, RGEN = 6 Ω
10 9 27 11
20 19 43 20 10
ns ns ns ns nC nC nC
VDS = –10 V, VGS = –4.5 V
ID = –3.5 A,
7.2 1.7 1.5
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A
(Note 2)
–1.3 –0.8 –1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when mounted on a 1in2 pad of 2 oz copper
b)
156°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si3441DV Rev A (W)
Si3441DV
Typical Characteristics
15 -3.5V -ID, DRAIN CURRENT (A) 12 -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.0V 2 1.8 1.6 1.4 1.2 1 0.8 0 1 2 3 4 0 3 6 9 12 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) -2.5V -3.0V -3.5V -4.5V VGS=-2.0V
9 -2.0V 6
3 -1.5V 0
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.22 RDS(ON), ON-RESISTANCE (OHM)
1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100
o
ID = -3.5A VGS = -4.5V
ID = -1.8A 0.18
0.14 TA = 125oC 0.1 TA = 25oC 0.06
0.02 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
10 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 8 125oC 6 TA = -55oC 25oC
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001
4
2
0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
Si3441DV Rev A (W)
Si3441DV
Typical Characteristics
5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.5A 4 -15V 3 CAPACITANCE (pF) VDS = -5V -10V 800 1000 CISS f = 1 MHz VGS = 0 V
600
2
400 COSS 200 CRSS 0 5 10 15 20
1
0 0 1 2 3 4 5 6 7 8 9 Qg, GATE CHARGE (nC)
0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W) 10
Figure 8. Capacitance Characteristics.
-ID, DRAIN CURRENT (A)
10 RDS(ON) LIMIT
100µs 1ms 10ms 100ms 1s
8
SINGLE PULSE RθJA = 156°C/W TA = 25°C
6
1 VGS = -10V SINGLE PULSE RθJA = 156oC/W TA = 25oC 0.01 0.1 1 DC
4
0.1
2
10
100
0 0.01
0.1
1 t1, TIME (sec)
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RθJA(t) = r(t) + RθJA RθJA = 156 C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2
o
0.1
0.1 0.05 0.02
0.01
0.01
SINGLE PULSE
0.001 0.00001
0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
Si3441DV Rev A (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™
DISCLAIMER
FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™
PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Star* Power™ Stealth™
SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H1