SI3447DV

Si3447DV April 2001 Si3447DV P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V RDS(ON) = 60 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Battery protection • Fast switching speed. • High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –5.5 –20 1.6 0.8 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W Package Marking and Ordering Information Device Marking .447 Device Si3447DV Reel Size 7’’ Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation Si3447DV Rev A (W) Si3447DV Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 8 V, VGS = –8 V VGS = 0 V VDS = 0 V VDS = 0 V Min –20 Typ Max Units V Off Characteristics –12 –1 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = –250 µA ID = –250 µA,Referenced to 25°C VGS = –4.5 V, VGS = –2.5 V, VGS = –1.8 V, VGS = –4.5 V, VDS = –5 V, ID = –5.5 A ID = –4.8 A ID = –4.0 A VDS = –5 V ID = –3.5 A –0.4 –0.7 3 24 30 42 –1.5 V mV/°C 33 43 60 mΩ ID(on) gFS –20 23 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = –10 V, f = 1.0 MHz V GS = 0 V, 1926 530 185 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 13 11 90 45 23 20 144 72 30 ns ns ns ns nC nC nC VDS = –10 V, VGS = –4.5 V ID = –3.5 A, 19 4 7.5 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2) –1.3 –0.7 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. b. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Si3447DV Rev A(W) Si3447DV Typical Characteristics 20 VGS = -4.5V -2.5V 15 -1.8V 10 -2.0V 3 VGS = -1.5V 2.5 2 -1.8V 1.5 -1.5V -2.0V -2.5V 1 -4.5V 5 0 0 1 2 3 0.5 0 5 10 -ID, DRAIN CURRENT (A) 15 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.12 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o ID = -5.5A VGS = -4.5V 0.09 ID = -2.8 A 0.06 TA = 125 C 0.03 TA = 25 C o o 0 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 20 VDS = -5V 15 125 C 10 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V 1 TA = 125oC 25oC -55oC TA = -55 C o 25 C o -IS, REVERSE DRAIN CURRENT (A) 0.1 0.01 5 0.001 0 0 0.5 1 1.5 2 2.5 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si3447DV Rev A(W) Si3447DV Typical Characteristics 5 ID = -5.5A 4 -15V 3 VDS = -5V -10V 3500 3000 2500 CISS 2000 1500 1000 f = 1MHz VGS = 0 V 2 1 500 COSS CRSS 0 0 5 10 15 20 25 0 0 5 10 15 20 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 10 10ms 100ms 1 VGS = -4.5V SINGLE PULSE RθJA = 156 C/W TA = 25 C 0.01 0.1 1 10 100 0 o o Figure 8. Capacitance Characteristics. 5 100µs 1ms POWER (W) 4 SINGLE PULSE RθJA = 156oC/W TA = 25oC 3 1s DC 2 0.1 1 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT D = 0 .5 R θ J A ( t) = r ( t) + R θ J A R θ J A = 1 5 6 ° C /W THERMAL RESISTANCE 0 .1 0 .2 0 .1 0 .0 5 P (p k ) t1 T J - T A = P * R θ J A ( t) t2 D u ty C y c le , D = t 1 / t 2 0 .0 1 0 .0 2 0 .0 1 S IN G L E P U L S E 0 .0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 t 1 , T IM E ( s e c ) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Si3447DV Rev A(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ Star* Power™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET  VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1