Si4466DY FDS6570A
January 2001
Si4466DY
Single N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features •
15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V.
• • • •
Low gate charge (47nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications • • •
DC/DC converter Load switch Battery protection
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
20
(Note 1a)
Units
V V A W
±12 15 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
4466
Device
Si4466DY
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
200 1 F airchild Semiconductor I nternational
Si4466DY Rev. A
FDS6570A Si4466DY
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆T J IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = –12 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250µA, Referenced to 25°C VGS = 4.5 V, ID =15 A VGS = 4.5 V, ID =15 A, TJ=125°C VGS = 2.5 V, ID =12 A VGS = 4.5 V, VDS = 5.0 V VDS = 5 V, ID = 15 A
Min Typ
20 29
Max
Units
V mV/°C
Off Characteristics
1 100 –100
µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆T J RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
0.4
0.9 -4 0.006 0.009 0.008
1.5
V mV/°C
0.0075 0.0130 0.0100
Ω
ID(on) gFS
On-State Drain Current Forward Transconductance
25 70
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
4700 850 310
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω
20 27 95 35
32 44 133 56 66
ns ns ns ns nC nC nC
VDS = 10 V, ID = 15 A, VGS = 5 V,
47 7 10.5
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
(Note 2)
2.1 0.65 1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
a) 50° C/W when mounted on a 0.5 in2 pad of 2 oz. copper.
b) 105° C/W when mounted on a 0.02 in2 pad of 2 oz. copper.
c) 125° C/W when mounted on a 0.003 in2 pad of 2 oz. copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Si4466DY Rev. A
FDS6570A Si4466DY
Typical Characteristics
50 VGS= 4.5V 2.5V ID, DRAIN CURRENT (A) 40 3.0V 30 2.0V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5
2
1.5
VGS= 2.0V 2.5V 3.0V
20
1
4.5V
10 1.5V 0 0 0.4 0.8 1.2 1.6 2 VDS, DRAIN TO SOURCE VOLTAGE (V)
0.5 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.03 RDS(ON), ON RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID= 15A VGS= 4.5V
ID= 7.0A 0.024
1.4
1.2
0.018
1
0.012
TJ= 125 C 25 C
o
o
0.8
0.006
0.6 -50 -25 0 25 50 75 100
o
125
150
0 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
50 VDS= 5V ID, DRAIN CURRENT (A) 40 TJ= -55 C 125 C
o o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
25 C
o
IS, REVERSE DRAIN CURRENT (A)
VGS= 0 10
TJ=125 C 1
o
o
30
25 C 125 C
o
20
0.1
10
0.01
0 0.5 1 1.5 2 2.5
0.001 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
Si4466DY Rev. A
FDS6570A Si4466DY
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID= 13A
(continued)
7000 6000
4
CAPACITANCE (pF)
VDS= 5V 10V 15V
5000 Ciss 4000 3000 2000 1000 0 Coss Crss 0 4 8 12 16 20
3
2
1
0 0 10 20 30 40 50 Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100 RDS(ON) Limit ID, DRAIN CURRENT (A) 1ms 10 1s 10s DC VGS= 4.5V SINGLE PULSE RθJA= 125 C/W 0.01 0.01 0.1 1 10 100
o
50
100µs
SINGLE PULSE 40 POWER (W) RθJA=125 C/W TA=25 C 30
o o
10ms 100ms
1
20
0.1
10
0 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10
D = 0.5 0.2 0.1 0.05 P(pk) 0.02 0.01 S ingle Pulse r(t), NORMALIZED EFFECTIVE
R θJA (t) = r(t) * R θJA R θJA = 125°C/W
t1
t2
TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design.
Si4466DY Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST
DISCLAIMER
FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™
PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8
SyncFET™ TinyLogic™ UHC™ VCX™
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LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G
