Si4539DY
January 2001
Si4539DY Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
N-Channel 7.0 A,30 V, RDS(ON)=0.028 Ω @ VGS=10 V RDS(ON)=0.040 Ω @ VGS= 4.5 V. P-Channel -5.0 A,-30 V,RDS(ON)=0.052 Ω @ VGS=-10 V RDS(ON)=0.080Ω @ VGS=-4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package.
SOT-23
TM SuperSOT -6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
5
4 3 2 1
39 45
S2 G2
6 7 8
SO-8
pin 1
S1
G1
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD
T A = 25°C unless otherwise noted
N-Channel 30 20
(Note 1a)
P-Channel -30 -20 -5 -20 2
Units V V A
7 20
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
W
1.6 1 0.9 -55 to 150 °C
TJ,TSTG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
© 2001 Fairchild Semiconductor International
Si4539DY Rev. A
Si4539DY
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25 oC ID = -250 µA, Referenced to 25 oC IDSS IGSSF IGSSR VGS(th) Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25 C ID = -250 µA, Referenced to 25 C RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.0 A VGS = 4.5 V, ID = 6.0 A VGS = -10 V, ID = -5.0 A VGS = -4.5 V, ID = - 4.0 A ID(on) gFS On-State Drain Current VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V Forward Transconductance VDS = 5 V, I D = -7 A VDS = -5 V, I D = -5 A DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz N-Ch P-Ch N-Ch VDS = -15 V, VGS = 0 V, f = 1.0 MHz P-Ch N-Ch P-Ch 650 730 345 400 90 90 pF pF pF N-Ch P-Ch N-Ch P-Ch 20 -20 15 8 S S P-Ch
o o
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch All All
30 -30 30 -25 1 -1 100 -100
V V mV/oC
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
µA µA nA nA
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage N-Ch P-Ch N-Ch P-Ch N-Ch 1 -1 1.7 -1.5 -4.4 3.2 0.024 0.035 0.044 0.068 0.028 0.04 0.052 0.08 A 3 -3 V V mV/oC
∆VGS(th)/∆TJ
Gate Threshold Voltage Temp. Coefficient
Ω
Input Capacitance
Reverse Transfer Capacitance
Si4539DY Rev. A
Si4539DY
Electrical Characteristics (continued)
SWITCHING CHARACTERISTICS Symbol tD(on) Parameter Turn - On Delay Time
(Note 2)
Conditions VDS = 10 V, I D = 1 A VGS = 10 V , RGEN = 6 Ω
Type N-Ch P-Ch N-Ch P-Ch
Min
Typ 8 11 14 10 23 90 9 55 18 19 3.2 3.5 4.3 3.6
Max 16 20 25 18 37 125 18 80 26 27
Units ns
tr tD(off)
Turn - On Rise Time
ns
Turn - Off Delay Time
VDS = -10 V, I D = -1 A VGS = -10 V , RGEN = 6 Ω
N-Ch P-Ch N-Ch P-Ch
ns
tf Qg Qgs Qgd
Turn - Off Fall Time
ns
Total Gate Charge
VDS = 10 V, I D = 7 A, VGS = 10 V
N-Ch P-Ch N-Ch
nC
Gate-Source Charge VDS = -10 V, I D = -5 A, Gate-Drain Charge VGS = -10 V
nC
P-Ch N-Ch P-Ch
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
N-Ch P-Ch
1.3 -1.3 0.75 -0.75 1.2 -1.2
A A V V
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A
(Note 2) (Note 2)
N-Ch P-Ch
a. 78OC/W on a 0.5 in2 pad of 2oz copper.
b. 125OC/W on a 0.02 in2 pad of 2oz copper.
c. 135OC/W on a 0.003 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%..
Si4539DY Rev. A
Si4539DY
Typical Electrical Characteristics: N-Channel
30 ID , DRAIN-SOURCE CURRENT (A)
2.4
5.5V
R DS(ON) , NORMALIZED
24
4.5V
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
2
18
4.0V
VGS = 4.0V
1.6
4.5 V 5.0V 6.0 V 7.0V 10V
12
3.5V
6
1.2
3.0V
0 0 1 2 3 4 5
0.8 0 6 12 18 24 30
VDS , DRAIN-SOURCE VOLTAGE (V)
I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.8 DRAIN-SOURCE ON-RESISTANCE
0.15
I D = 7A
1.6 1.4 1.2 1 0.8 0.6 -50
I D = 3A
R DS(ON) , ON-RESISTANCE (OHM)
V GS = 10V
0.12
R DS(ON) , NORMALIZED
0.09
0.06
TA = 125°C
0.03
TA = 25°C
0 2 4 6 8 10
-25
0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) J
125
150
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
V DS = 10V
ID , DRAIN CURRENT (A) 25 20 15 10
I S , REVERSE DRAIN CURRENT (A)
30
20
VGS = 0V TJ = 125°C
1
25°C
0.1
-55°C
0.01
T = 125°C J
5
25°C -55°C
0.001
0
0.0001 1 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
Si4539DY Rev. A
Si4539DY
Typical Electrical Characteristics: N-Channel (continued)
10 V GS , GATE-SOURCE VOLTAGE (V) 2000
I D = 7A
8
VDS = 5V
CAPACITANCE (pF)
1200
10V 15V
800
Css i Coss
6
400
4
200
2
100
f = 1 MHz VGS = 0 V
0.2 0.5 1 2 5
Crss
0 0 2 4 6 8 10 12 Q g , GATE CHARGE (nC)
50 0.1
10
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50 30 I D , DRAIN CURRENT (A) 10 5 2 1 0.5
MIT ) LI (ON DS R
100
1m s 10m s 10 0m s 1s
30
us
25 20 15 10 5 0 0.01
SINGLE PULSE RθJA =135 °C/W TA = 25°C
0.1 0.05
VGS =10V SINGLE PULSE R θJA= 135° C/W T A = 25°C A
0.2 0.5 V
DS
10s DC
POWER (W)
0.01 0.1
0.1
0.5
10
50 100
300
1
2
5
10
30
50
SINGLE PULSE TIME (SEC)
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
Si4539DY Rev. A
Si4539DY
Typical Electrical Characteristics: P-Channel
-I D , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE 30 2.4
R DS(ON), NORMALIZED
24
VGS = -10V -7.0V -5.5V - 5.0V -4.5V -4.0V
2
VGS = - 3.5V -4.0 V
18
1.6
-4.5 V -5.0 V
1.2
12
-3.5V -3.0V
-6.0V -8.0V -10V
6
0
0.8 0 1 2 3 4 5 6 - VDS , DRAIN-SOURCE VOLTAGE (V)
0
5
10 - ID , DRAIN CURRENT (A)
15
20
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
1.8 DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50
0.2
V GS = 10V
R DS(ON) , ON-RESISTANCE (OHM)
I D = 5A
I D = -2.0A
0.15
R DS(ON) , NORMALIZED
0.1
125°C
0.05
25°C
0 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) J 125 150
0
2
4
6
8
10
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with Temperature.
Figure 14. On-Resistance Variation with Gate-to-Source Voltage.
V DS = -5V
- ID , DRAIN CURRENT (A) 40
-IS , REVERSE DRAIN CURRENT (A)
50
60 10 1 0.1
T = -55°C
J
VGS = 0V
25°C 125°C
TJ = 125°C 25°C -55°C
30
20
0.01 0.001 0.0001
10
0 0 2 -V
GS
4 6 8 , GATE TO SOURCE VOLTAGE (V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.
Si4539DY Rev. A
Si4539DY
Typical Electrical Characteristics: P-Channel (continued)
10 -VGS , GATE-SOURCE VOLTAGE (V) 2000
I D = -5A
8
CAPACITANCE (pF)
VDS = -5V -10V -15V
1000
Ciss
500
6
Coss
4
200
C ss r
100
2
f = 1 MHz VGS = 0 V
0.3 1 3 10 30
0 0 2 4 6 8 10 12 Q g , GATE CHARGE (nC)
50 0.1
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
30
100
-ID, DRAIN CURRENT (A) 10
T IMI )L (ON DS R
1m 10m
us
POWER (W)
25 20 15 10 5 0 0.01
s
SINGLE PULSE RθJA =135 °C/W TA = 25°C
s
10
1
0m
0.1
VGS = -10V SINGLE PULSE R θJA = 135°C/W TA A = 25°C
0.2 0.5 1 2
1s 10s DC
s
0.01 0.1
0.1
0.5
10
50 100
300
5
10
20
50
SINGLE PULSE TIME (SEC)
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power Dissipation.
Si4539DY Rev. A
Si4539DY
Typical Thermal Characteristics: N & P-Channel (continued)
1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
R θJA (t) = r(t) * R θJA R θJA =135°C/W
t1
t2
TJ - TA = P * R JA (t) θ Duty Cycle, D = t1 /t2
100
300
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design.
Si4539DY Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST
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Preliminary
First Production
No Identification Needed
Full Production
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G