SI6426DQ

Si6426DQ October 2001 Si6426DQ 20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (2.5V to 8V). Features • 5.4 A, 20 V RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V • Extended VGSS range (±8V) for battery applications • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Applications • Battery protection • DC/DC conversion • Power management • Load switch D S S D G S S D Pin 1 5 6 7 8 4 3 2 1 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous TA=25oC unless otherwise noted Parameter Ratings 20 ±8 (Note 1) Units V V A W °C 5.4 30 1.4 1.1 –55 to +150 – Pulsed Power Dissipation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 87 114 °C/W Package Marking and Ordering Information Device Marking 6426 Device Si6426DQ Reel Size 13’’ Tape width 16mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation Si6426DQ Rev B(W) Si6426DQ Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf trr Qg Qgs Qgd IS VSD TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA Min 20 Typ Max Units V Off Characteristics ID = 250 µA, Referenced to 25°C VDS = 20 V, VGS = 8 V, VGS = –8 V, VDS = VGS, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 µA 0.6 0.9 –3 23 33 20 8 11 710 173 84 VDD = 6 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 7 17 16 3 IF = 1.5 A, VGS = 0 V, dIF/dt = 100A/µs ID = 5.4 A, VDS = 6 V, VGS = 4.5 V 14 7 1.5 1.2 1.25 (Note 2) 14 1 5 100 –100 1.5 mV/°C µA nA nA V mV/°C 35 40 mΩ A S pF pF pF 14 31 29 6 100 10 ns ns ns ns ns nC nC nC A V VDS = 20 V, VGS = 0 V, TJ=55°C On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) ID = 250 µA, Referenced to 25°C VGS = 4.5 V, VGS = 2.5 V, VGS = 4.5 V, VGS = 2.5 V, VDS = 10 V, ID = 5.4 A ID = 4.9 A VDS = 5 V VDS = 5 V ID = 5.4 A Dynamic Characteristics VDS = 10 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Reverse Recovery Time Total Gate Charge Gate–Source Charge Gate–Drain Charge Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 1.25 A Voltage 0.7 1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 87°C/W when mounted on a 1in2 pad of 2 oz copper. b) 114°C/W when mounted on a minimum pad of 2 oz copper. c) 2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Scale 1 : 1 on letter size paper Si6426DQ Rev B(W) Si6426DQ Typical Characteristics 30 25 ID, DRAIN CURRENT (A) 20 15 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.5V 2.6 3.0V 2.5V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 2.5V 3.0V 3.5V VGS = 2.0V 2.0V 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS, DRAIN-SOURCE VOLTAGE (V) 4.0V 4.5V 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.11 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = 5.4A VGS = 4.5V 1.4 ID = 2.7A 0.09 1.2 0.07 TA = 125oC 0.05 1 TA = 25oC 0.03 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 0.01 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 15 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55oC 25 C 125oC o IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 10 TA = 125oC 25oC -55oC 5 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si6426DQ Rev B(W) Si6426DQ Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) 1200 ID = 5.4A VDS = 6V 15V 10V CAPACITANCE (pF) 1000 CISS 800 600 400 200 0 0 2 4 Qg, GATE CHARGE (nC) 6 8 f = 1MHz VGS = 0 V 4 3 2 1 COSS CRSS 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100ms 1s DC 0.1 VGS = 4.5V SINGLE PULSE RθJA = 114oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 10s 100µs 1ms 10ms 1 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RθJA = 114°C/W TA = 25°C 30 20 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE RθJA(t) = r(t) * RθJA RθJA =114 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Si6426DQ Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4