SI6463DQ

Si6463DQ April 2001 Si6463DQ P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –8.8 A, –20 V. RDS(ON) = 0.0125 Ω @ VGS = –4.5 V RDS(ON) = 0.018 Ω @ VGS = –2.5 V Extended VGSS range (±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package • Applications • • • • Load switch Motor drive DC/DC conversion Power management • • • D S S D G S S D 5 6 7 8 Pin 1 4 3 2 1 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –20 ± 12 (Note 1) Units V V A W °C –8.8 –50 1.3 0.6 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 96 208 °C/W Package Marking and Ordering Information Device Marking 6463 Device Si6463DQ Reel Size 13’’ Tape width 16mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation Si6463DQ Rev. A(W) Si6463DQ Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = –12 V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min –20 Typ Max Units V Off Characteristics –12 –1 –100 100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –8.8 A VGS = –2.5 V, ID = –7.2 A VGS = –4.5 V, ID = –8.8 A, TJ= 125°C VGS = –4.5 V, VDS = –10 V, VDS = –5 V ID = –8.8 A –0.6 –0.8 3.5 10 14 13 –1.5 V mV/°C 12.5 18 19 mΩ A –50 46 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) 5045 VDS = –10 V, f = 1.0 MHz V GS = 0 V, 1035 549 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge 8 VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 14 130 80 41 VDS = –10 V, VGS = –4.5 V ID = –8.8 A, 7 11 16 25 208 128 66 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Notes: Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –1.2 A Voltage –1.2 (Note 2) A V –0.6 –1.2 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 96°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Si6463DQ Rev. A(W) Si6463DQ Typical Characteristics 30 VGS = -4.5V 25 20 15 10 5 0 0 0.5 1 1.5 -3.0V -2.5V -2.0V 2 1.8 VGS = -2.0V 1.6 1.4 -2.5V 1.2 1 0.8 0 6 12 18 24 30 -1.5V -3.0V -3.5V -4.0V -4.5V -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.035 1.5 1.4 1.3 ID = -8.8A VGS = -4.5V ID = -4.4A 0.03 0.025 1.2 1.1 1 0.9 0.01 0.8 0.7 -50 -25 0 25 50 75 100 o 0.02 TA = 125 C 0.015 T A = 25 C o o 0.005 125 150 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 VDS = -5V 40 125 C 30 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55 C o 25 C 10 o VGS = 0V TA = 125 C 1 25 C -55 C o o o 20 0.1 10 0.01 0 0.5 1 1.5 2 2.5 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si6463DQ Rev. A(W) Si6463DQ Typical Characteristics 5 ID = -8.8A 4 -15V 3 VDS = -5V -10V 8000 7000 6000 5000 4000 CISS f = 1 MHz VGS = 0 V 2 3000 2000 COSS 1 1000 0 0 10 20 30 40 50 CRSS 0 0 3 6 9 12 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 100µs 10ms 100ms 1s 10s 1 VGS = -4.5V SINGLE PULSE RθJA = 208 C/W TA = 25 C 0.01 0.01 0.1 1 10 100 0 o o Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RθJA = 208°C/W TA = 25°C RDS(ON) LIMIT 10 40 30 DC 20 0.1 10 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RθJA(t) = r(t) + RθJA RθJA = 208 °C/W P(pk) 0.01 t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.1 t1, TIME (sec) 1 10 100 1000 0.001 0.0001 0.001 0.01 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Si6463DQ Rev. A(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ Star* Power™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET  VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1