SI6466

Si6466DQ November 2001 Si6466DQ 20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (2.5V to 12V). Features • 7.8 A, 20 V RDS(ON) = 15 mΩ @ VGS = 4.5 V RDS(ON) = 22 mΩ @ VGS = 2.5 V • Extended VGSS range (±12V) for battery applications • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Applications • Battery protection • DC/DC conversion • Power management • Load switch D S S D G S S D Pin 1 5 6 7 8 4 3 2 1 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous TA=25oC unless otherwise noted Parameter Ratings 20 ± 12 (Note 1) Units V V A W °C 7.8 30 1.4 1.1 –55 to +150 – Pulsed Power Dissipation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 87 114 °C/W Package Marking and Ordering Information Device Marking 6466 Device Si6466DQ Reel Size 13’’ Tape width 16mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation Si6466DQ Rev C(W) Si6466DQ Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf trr Qg Qgs Qgd IS VSD TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C VDS = 20 V, VGS = 12 V, VGS = –12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min 20 Typ Max Units V Off Characteristics 14 1 25 100 –100 0.6 1.0 –3.5 12 19 20 33 1320 396 211 7 12 30 11 VGS = 0 V, IF = 1.5 A, dIF/dt = 100A/µs ID = 7.8 A, VDS = 10 V, VGS = 4.5 V 23 14 3 4.5 1.5 (Note 2) mV/°C µA nA nA V mV/°C 15 22 mΩ A S pF pF pF 14 22 48 20 80 20 ns ns ns ns ns nC nC nC A V VDS = 20 V, VGS = 0 V, TJ=55°C On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C VGS = 4.5 V, VGS = 2.5 V, VGS = 10 V, VDS = 10 V, ID = 7.8 A ID = 6.3 A VDS = 5 V ID = 7.8 A 1.5 Dynamic Characteristics VDS = 10 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time VDD = 10 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω Reverse Recovery Time Total Gate Charge Gate–Source Charge Gate–Drain Charge Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 1.5 A Voltage 0.7 1.1 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 87°C/W when mounted on a 1in2 pad of 2 oz copper. b) 114°C/W when mounted on a minimum pad of 2 oz copper. c) Scale 1 : 1 on letter size paper 2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Si6466DQ Rev C(W) Si6466DQ Typical Characteristics 30 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.5V 3.0V 2.5V 1.8 VGS = 2.5V 1.6 1.4 3.0V 1.2 1 0.8 3.5 4.0V 4.5V 2.0V 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.053 RDS(ON), ON-RESISTANCE (OHM) ID = 4A 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 7.8A VGS =4.5V 1.4 0.045 0.037 0.029 TA = 125oC 1.2 1 0.021 TA = 25oC 0.8 0.013 0.005 1 2 3 4 5 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 25 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 20 TA = -55oC 25oC 125oC VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC 15 10 5 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si6466DQ Rev C(W) Si6466DQ Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) 2100 ID = 7.8A VDS = 5V 10V CAPACITANCE (pF) 15V 1800 1500 1200 900 600 300 0 0 4 8 Qg, GATE CHARGE (nC) 12 16 4 CISS f = 1MHz VGS = 0 V 3 2 COSS 1 0 CRSS 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 100us 1ms 10ms 100ms 1s P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 50 Figure 8. Capacitance Characteristics. 10 40 SINGLE PULSE RθJA = 114°C/W TA = 25°C 30 1 VGS = 4.5V SINGLE PULSE RθJA = 114oC/W TA = 25oC 10s DC 20 0.1 10 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE RθJA(t) = r(t) * RθJA RθJA =114 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Si6466DQ Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4