S S12-S100
SS12 - S100
Features • • •
Glass passivated junctions. High current capability, low VF. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA = 25°C unless otherwise noted
Parameter
12 Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length @ TA = 75°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 20 13 30 14 40
Value
15 50 16 60 18 80 19 90 100 100
Units
V A A °C °C
1.0 40 -65 to +150 -65 to +125
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD RθJA Power Dissipation Thermal Resistance, Junction to Ambient *
Parameter
Value
1.1 88
Units
W °C/W
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
VF IR
TA = 25°C unless otherwise noted
Parameter
12 Forward Voltage @ 1.0 A Reverse Current @ rated VR TA = 25°C TA = 100°C 13 500 14
Device
15 16 18 19 850 100 700 0.2 10
Units
mV mA mA
2001 Fairchild Semiconductor Corporation
SS12-S100, Rev. C
S S12-S100
Schottky Rectifiers
(continued)
Typical Characteristics
Average Rectified Forward Current, IF [A]
1
20
SS12 - SS14
10
0.75
SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2x0.2"(5.0x5.0mm) COPPER PAD AREAS
Forward Current, IF [A]
5
SS15 - SS16
0.5
1
SS18 - S100
0.25
0
T J = 25ºC Pulse Width = 300µS 1% Duty Cycle
0
20
40 60 80 100 Lead Temperature [ºC]
120
140
0.1
0
Figure 1. Forward Current Derating Curve
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage, VF [V]
2
Figure 2. Forward Voltage Characteristics
Peak Forward Surge Current, IFSM [A]
30 25 20 15 10 5 0
8.3ms Single Half-Sine-Wave JEDEC Method
400 Total Capacitance, CT [pF] 200
T J = 25ºC
100 50 40 30 20 10 0.1
1
2
5 10 20 Number of Cycles at 60Hz
50
100
0.5 1 5 10 Reverse Voltage, VR [V]
50 100
Figure 3. Non-Repetitive Surge Current
Figure 4. Total Capacitance
SS12-S100, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™
DISCLAIMER
FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™
OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ®
SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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