SS24

SS24

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    SS24 - Schottky Rectifiers - Fairchild Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
SS24 数据手册
S S22-S210 SS22 - S210 Features • • • Glass passivated junctions. High current capability, low VF. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. SMB/DO-214AA COLOR BAND DENOTES CATHODE Schottky Rectifiers Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM Tstg TJ TA = 25°C unless otherwise noted Parameter 22 Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length @ TA = 75°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 20 23 30 24 40 Value 25 50 26 60 2.0 50 -65 to +150 -65 to +125 28 80 29 90 210 100 Units V A A °C °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol PD RθJA Parameter Power Dissipation Thermal Resistance, Junction to Ambient * Value 1.3 75 Units W °C/W *Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol VF IR TA = 25°C unless otherwise noted Parameter 22 Forward Voltage @ 2.0 A Reverse Current @ rated VR TA = 25°C TA = 100°C 23 500 24 Device 25 26 0.4 10 28 29 850 210 700 Units mV mA mA 2001 Fairchild Semiconductor Corporation SS22-S210, Rev. C S S22-S210 Schottky Rectifiers (continued) Typical Characteristics Average Rectified Forward Current, IF [A] 2 50 20 TA = 25º C f = 1 .0 MHz Vsig = 50mVp-p SS22-24 1.5 Forward Current, IF [A] 10 5 1 0.5 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 8.0x8.0mm COPPER PAD AREAS SS28 - S210 1 SS25-26 0 50 60 70 80 90 100 110 120 130 140 150 Lead Temperature [ºC] 0.1 0.2 0.3 Figure 1. Forward Current Derating Curve 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage, VF [V] 1 1.1 Figure 2. Forward Voltage Characteristics 10 Total Capacitance, CT [pF] SS22-24 T A = 100 ºC 500 SS22-24 Reverse Current, IR [mA] 1 200 100 50 TA = 2 5º C f = 1 .0 MHz Vsig = 50mVp-p SS25-S210 0.1 TA = 7 5º C SS25-S210 TA = 2 5º C 0.01 20 10 0.1 0.001 0 20 40 60 80 100 Reverse Voltage, VR[V] 120 140 0.5 1 5 10 20 Reverse Voltage, VR [V] 50 100 Figure 3. Reverse Current vs Reverse Voltage Figure 4. Total Capacitance Peak Forward Surge Current, IFSM [A] 60 50 40 30 20 10 0 8.3ms Single Half Sine-Wave JEDEC Method 1 2 5 10 20 50 Number of Cycles at 60Hz 100 Figure 5. Non-Repetitive Surge Current SS22-S210, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4
SS24
### 物料型号 - 型号:SS22-S210

### 器件简介 - SS22-S210是由Fairchild Semiconductor生产的肖特基整流器,具有玻璃钝化结、高电流能力、低正向电压($V_F$)等特点,适用于低电压、高频逆变器自由轮淌和极性保护应用。

### 引脚分配 - SMB/DO-214AA封装,颜色带表示阴极。

### 参数特性 - 最大重复反向电压($V_{RRM}$):22型号20V,23型号30V,24型号40V,25型号50V,26型号60V,28型号80V,29型号90V,210型号100V。 - 平均整流前向电流($IF(AV)$):2.0A。 - 非重复峰值前向浪涌电流($IFSM$):8.3ms单半正弦波,50A。 - 存储温度范围($T_{stg}$):-65至+150°C。 - 工作结温($T_J$):-65至+125°C。

### 功能详解 - 该器件主要用于整流作用,具有低正向电压降和高浪涌电流承受能力,适合高频应用。

### 应用信息 - 适用于低电压、高频逆变器自由轮淌和极性保护。

### 封装信息 - 器件封装为SMB/DO-214AA,具体尺寸和封装细节需参考Fairchild Semiconductor的标准封装规范。

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