SS8550B

SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C) 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -40 -25 -6 -1.5 1 150 -65 ~ 150 Units V V V A W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE (on) Cob fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC= -100µA, IE=0 IC= -2mA, IB=0 IE= -100µA, IC=0 VCB= -35V, IE=0 VEB= -6V, IC=0 VCE= -1V, IC= -5mA VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA IC= -800mA, IB= -80mA IC= -800mA, IB= -80mA VCE= -1V, IC= -10mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -50mA 100 45 85 40 170 160 80 -0.28 -0.98 -0.66 15 200 Min. -40 -25 -6 -100 -100 300 -0.5 -1.2 -1.0 V V V pF MHz Typ. Max. Units V V V nA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage Output Capacitance Current Gain Bandwidth Product hFEClassification Classification hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300 ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 SS8550 Typical Characteristics -0.5 1000 VCE = -1V IB=-4.0mA IC[mA], COLLECTOR CURRENT -0.4 IB=-3.5mA IB=-3.0mA hFE, DC CURRENT GAIN 100 -0.3 IB=-2.5mA IB=-2.0mA -0.2 IB=-1.5mA IB=-1.0mA 10 -0.1 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 -2.0 1 -0.1 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10000 -100 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC=10IB VCE = -1V -1000 IC[mA], COLLECTOR CURRENT -100 -1000 -10 VBE(sat) -100 -1 VCE(sat) -10 -0.1 -1 -10 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 f=1MHz IE=0 VCE=-10V Cob[pF], CAPACITANCE 10 100 1 -1 -10 -100 -1000 10 -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 SS8550 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1