SSF8N90A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 1.247 Ω (Typ.) SSF8N90A BVDSS = 900 V RDS(on) = 1.6 Ω ID = 5.5 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds Ο Ο Ο Value 900 5.5 3.5 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 32 + 30 _ 801 5.5 9.5 1.5 95 0.76 - 55 to +150 O 1 O 1 O 3 O 2 Ο C 300 Thermal Resistance Symbol R R θJC θJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --- Max. 1.32 40 Units Ο C /W Rev. B ©1999 Fairchild Semiconductor Corporation SSF8N90A Electrical Characteristics (TC=25 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Ο N-CHANNEL POWER MOSFET C unless otherwise specified) Min. Typ. Max. Units 900 -2.0 -----------------1.06 ------5.0 185 78 25 38 122 41 94 14.9 43.5 --V Ο Test Condition VGS=0V,ID=250µA See Fig 7 V/ C ID=250µA VDS=5V,ID=250µA 3.5 V VGS=30V 100 nA VGS=-30V -100 25 250 1.6 -215 90 60 85 255 90 123 --nC ns µA Ω Ω pF VDS=900V VDS=720V,TC=125 C VGS=10V,ID=2.75A VDS=50V,ID=2.75A 4 O* 4 O Ο 2070 2690 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450V,ID=8A, RG=10Ω See Fig 13 VDS=720V,VGS=10V, ID=8A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------620 9.3 5.5 32 1.4 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=5.5A,VGS=0V TJ=25 C ,IF=8A diF/dt=100A/µs 4 O Ο Ο Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=50mH, I AS=5.5A, V DD=50V, R G=27Ω, Starting T J =25 C O_ _ _ 3 O ISD < 8A, di/dt