SSI2N80A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ.) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds 300 Ο Ο Ο Value 800 2 1.3 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 8 + 30 _ 213 2 8 2.0 3.1 80 0.64 - 55 to +150 O 1 O 1 O 3 O 2 Ο C Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.56 40 62.5 Ο Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation SSW/I2N80A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 800 -2.0 -----------------1.06 ------1.56 425 45 19 15 22 38 18 22 3.8 11.6 --3.5 100 -100 25 250 6.0 -550 55 25 40 55 85 45 30 --nC ns pF µA Ω Ω V V/ C V nA Ο Test Condition VGS=0V,ID=250µA ID=250µA VGS=30V VGS=-30V VDS=800V VDS=640V,TC=125 C VGS=10V,ID=0.85A VDS=50V,ID=0.85A 4 O* 4 O Ο See Fig 7 VDS=5V,ID=250µA VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=400V,ID=2A, RG=16 Ω See Fig 13 45 OO VDS=640V,VGS=10V, ID=2A See Fig 6 & Fig 12 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------290 0.8 2 8 1.4 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=1.7A,VGS=0V TJ=25 C,IF=2A diF/dt=100A/µs 4 O Ο Ο Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=100mH, I AS=2A, VDD=50V, RG=27Ω, Starting T J =25 C _ _ _ 3 O ISD < 2A, di/dt