SSP3N90A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ.) 1 2 3 SSP3N90A BVDSS = 900 V RDS(on) = 6.2 Ω ID = 3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds Ο Ο Ο Value 900 3 1.9 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 12 + 30 _ 286 3 10 1.5 100 0.8 - 55 to +150 O 1 O 1 O 3 O 2 Ο C 300 Thermal Resistance Symbol R R R θJC θCS θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 1.25 -62.5 Units Ο C /W Rev. B ©1999 Fairchild Semiconductor Corporation SSP3N90A Electrical Characteristics (TC=25 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller” ) Charge Ο N-CHANNEL POWER MOSFET C unless otherwise specified) Min. Typ. Max. Units 900 -2.0 -----------------1.13 ------2.19 590 55 22 16 26 47 24 28 5.5 11.9 --3.5 100 -100 25 250 6.2 -770 65 28 40 60 105 60 37 --nC ns pF µA Ω V V nA Test Condition VGS=0V,ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=900V VDS=720V,TC=125 C VGS=10V,ID=1.5A VDS=50V,ID=1.5A 4 O* 4 O Ο Ο V/ C ID=250µA Ω VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450V,ID=3A, RG=16Ω See Fig 13 VDS=720V,VGS=10V, ID=3A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------380 1.9 3 12 1.4 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=3A,VGS=0V TJ=25 C ,IF=3A diF/dt=100A/µs 4 O Ο Ο Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=60mH, I AS=3A, VDD=50V, RG=27Ω, Starting T J =25 C _ _ _ 3 O ISD < 3A, di/dt