SSR1N50A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 4.046 Ω (Typ.) SSR/U1N50A BVDSS = 500 V RDS(on) = 5.5 Ω ID = 1.3 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C ) * Ο Ο Ο Value 500 1.3 0.82 1 O Units V A A V mJ A mJ V/ns W W W/ C Ο 5 + 30 _ 113 1.3 2.6 3.5 2.5 26 0.21 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C ) Ο Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο C 300 Thermal Resistance Symbol R θJC R θJA R θJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 4.76 50 110 Ο Units C /W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation SSR/U1N50A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 500 -2.0 -----------------0.63 ------1.04 220 30 11 12 13 42 15 11 1.6 5.5 --4.0 100 -100 10 100 5.5 -290 35 13 35 35 90 40 16 --nC ns pF µA Ω Ω V V/ C V nA Ο Test Condition VGS=0V,ID=250 µA See Fig 7 VDS=5V,ID=250 µ A VGS=30V VGS=-30V VDS=500V VDS=400V,TC=125 C VGS=10V,ID=0.65A VDS=50V,ID=0.65A 4 O 4 O Ο ID=250 µ A VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=250V,ID=1.5A, RG=24Ω See Fig 13 VDS=400V,VGS=10V, ID=1.5A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------162 0.54 1.3 5 1.15 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=1.3A,VGS=0V TJ=25 C,IF=1.5A diF/dt=100A/µ s 4 O Ο Ο Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=120mH, I AS=1.3A, VDD=50V, RG=27 Ω , Starting T J =25 oC 3 _ _ _ O ISD < 1.5A, di/dt