TN3019A
TN3019A
C
TO-226
B E
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80 140 7.0 1.0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
TN3019A 1.0 8.0 125 50
Units
W mW/°C °C/W °C/W
1 997 Fairchild Semiconductor Corporation
TN3019A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 30 mA, IB = 0 IC = 100 µ A, IE = 0 IE = 100 µ A, IC = 0 VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150°C VEB = 5.0 V, IC = 0 80 140 7.0 0.01 10 0.01 V V V µA µA µA
ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC=150 mA,VCE=10 V,TA=-55°C IC = 500 mA, VCE = 10 V* IC = 1.0 A, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 10 mA, IB = 15 mA 50 90 100 40 50 15 300
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
0.2 0.5 1.1
V V V
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo hfe rb’Cc NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain Collector Base Time Constant Noise Figure IC = 50 mA, VCE = 10 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VBE = 0.5 V, IC = 0, f = 1.0 MHz IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IE = 10 mA, VCB = 10 V, f = 4.0 MHz IC = 100 mA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz 80 100 12 60 400 400 4.0 pS dB MHz pF pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
TN3019A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
VCESAT - COLLECTOR EM ITTE R VOLTAGE (V)
hFE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
350 300 250 200 150 100 50 0 0.1 0.3 1 3 10 30 100 300 I C - COLLECTOR CURRENT (mA) 1000
- 40 °C 125 °C
Collector-Emitter Saturation Voltage vs Collector Current
1.2 1 0.8 0.6
25 °C
β = 10
V CE = 1V
25 °C
0.4
- 40 °C
0.2
125 °C
0 0.1
1 10 100 I C - COLLECTOR CURRE NT (mA)
1000
β = 10 0.8
- 4 0 °C
V BEON - BAS E EMITTER ON VOLTAGE (V)
VBESAT - BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
Base Emitter ON Voltage vs Collector Current
1 0.8 0.6 0.4 0.2 0 0.1 VCE = 1V 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000
- 40°C
25 °C 125°C
25 °C 125 °C
0.4
0 0.1
1 10 100 I C - COLLECTOR CURRE NT (mA)
1000
Collector-Cutoff Current vs Ambient Temperature
I CBO - COLLECTOR CURRENT (nA) 10
V CB = 80V
Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage
100 f = 1.0 MHz CAPACITANCE (pF) 80 60 40
Ceb
1
20
C cb
0.1 25
50 75 100 T A - AMBIENT TEMPERATURE (° C)
125
0 0.1
1 10 REVERSE BIAS VOLTAGE (V)
50
TN3019A
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Small Signal Current Gain at 20 MHz
h FE - SMALL SIGNAL CURRENT GAIN 10 f = 20 MHz 8 VCE = 10V TIME (ns) 6 4 2 0 V CE = 1.0V 800 600 400 200 1000
Switching Times vs Collector Current
tr 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 10 IC
tf
ts td 1000
100 500 - COLLECTOR CURRENT (mA)
Turn On and Turn Off Times vs Collector Current
1000
PD - POWER DISSIPATION (W) 1
Power Dissipation vs Ambient Temperature
TO-226
0.75
800 TIME (ns) 600 400 200 t on 0 10
I B1 = I B2 = I C V CC = 50V 10
0.5
t off 1000
0.25
100 500 I C - COLLECTOR CURRENT (mA)
0
0
25
50 75 100 TEMPERATURE (o C)
125
150
TN3019A
NPN General Purpose Amplifier
(continued)
Test Circuit
- 4.0 V 50 V
IC 150 mA 200 mA 500 mA
Rb 314 Ω 157 Ω 94 Ω
RL 330 Ω 167 Ω 100 Ω
- 1 µF 1.0 KΩ RL
Rb
To Sampling Scope Rise Time ≤ 5.0 ns Input Z ≈ 100 kΩ
50 Ω
1.5 µS 10 V 0V
Pulse Source Rise Time ≤ 5.0 ns Fall Time ≤ 10 ns
FIGURE 1: tON, tOFF Test Circuit
TO-226AE Tape and Reel Data
TO -226AE Packaging Conf iguratio n: Fi gur e 1.0
TAPE and REEL OPTION
FSCINT Label sampl e
FAIRCHIL D S EMICONDUCTOR CORPORATION L OT:
S e Fig 2 e .0 for va rious
HTB:B 10000
Reeli g Styles n
CBVK741B019
QTY:
NSID:
PN2222N
SP EC:
FSCINT
SP EC RE V: QA REV:
D/C1:
D9842
B2
Labe l 5 Reels per Int er med iate B ox
(FSCINT)
F63TNR Label s ampl e
LOT: CBVK7 41B019 QTY: 2000
Cus tom ized Labe l
F63TNR Labe l Cus tom ized
FSID: PN222N
SPEC:
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
Labe l 375m m x 267m m x 375mm Int er med iate B ox
AMMO PACK OPTION
S e Fig 3 e .0 for 2 Ammo Pack Option s
TO-226AE TNR/AMMO PACKING INF R O MATION
Packing Reel
Style A E
Qua ntity 2,000 2,000 2,000 2,000
EOL code D26Z D27Z D74Z D75Z
Am m o
M P
FSCINT Labe l 327m m x 158m m x 135mm Im med iate B ox 5 A mm o box es per Int er med iate B ox
Uni t wei gh t Reel weig ht wi th c om po nents Amm o weig ht wi th c omp on en ts
= 0.300g m = 0.868 k g = 0.880 k g
Cus tom ized Labe l
Max q uanti ty p er i nte rm ed iate b ox = 10,000 un its
Cus tom ized Labe l
F63TNR Bar c ode Label 333m m x 231m m x 183mm Int er med iate B ox
BULK OPTION
S e Bulk P e acking Informat ion tabl e
Anti -stati c FSCINT Bar c ode Label
(TO-226AE ) BULK PACKING INFORMATION
LEADCLIP DIMENSION NO L EAD CLIP NO L EAD CLIP NO L EADCLIP
Bub ble Sheets
EOL CO DE J18Z J05Z NO EOL CODE
DESCRIPTION TO-18 OPTION STD TO-5 OPTION STD
QUANTITY 1.0 K / BOX 1.0 K / BOX 1.5 K / BOX
1,500 un its per EO70 box for s td o pti on
114m m x 102m m x 51mm EO70 Im mediate B ox
TO-226 STANDARD STRAIGHT
5 EO70 boxes pe r Int er med iate B ox
530m m x 130m m x 83mm Inter med iate box
Cus tomized Label
FSCINT Labe l 7,500 un its m axim um per interm edi at e box for st d opt ion
©2000 Fairchild Semiconductor International
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Reeling Style Configuration: Fi gure 2.0
Machine Option "A" (H) Machine Option "E"(J)
Style "A" D26Z, D70Z (s/h)
Style "E" D 27Z, D71Z (s/h)
TO-226AE Radial Ammo Packaging Configuration: Fi gure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92) FIRST WIRE OFF IS COL LECTOR (ON PKG. 92) ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE D74Z (M)
ORDER STYLE D75Z (P)
FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COL LECTOR ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Tape and Reel T aping Dimension Configuration: Fi gur e 4.0
Hd P Pd
b Hb W1 L H1 HO L1 S
d
WO W2 W
t
t1
P1
F1 DO
P2
ITEM DESCRI PTION Base of P ackage to Le ad Bend Componen Height t Lead Clinch He ight Component Base Heig ht Componen Alignm t ent (s ide / side ) Componen Alignm t ent ( front/bac ) k Componen Pitch t Feed H ole P itch Hole Center to First Lead Hole Center to C omponen C t enter Lead Spread Lead T hickness Cut Le ad Length Taped L ead Le ngt h Taped L ead T hicknes s
SYM BOL b Hb HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S
DIMENSION 0.098 (max) 1.078 ( +/- 0. 050) 0.630 ( +/- 0. 020) 0.748 ( +/- 0. 020) 0.040 (max ) 0.03 (max 1 ) 0.500 ( +/- 0. 020) 0.500 ( +/- 0. 008) 0.150 (+0.009, -0.010 ) 0.247 ( +/- 0. 007) 0.104 ( +/- 0 . 010) 0.018 (+0.002, -0.003) 0.429 (max ) 0.209 (+0.05 -0.052 1, ) 0.032 ( +/- 0. 006) 0.02 ( 1 +/- 0. 006) 0.708 (+0.02 -0.019) 0, 0.236 ( +/- 0. 012) 0.035 (max ) 0.360 ( +/- 0. 025) 0.157 (+0.008, -0.007) 0.004 (max )
PO
User Direction of Feed
TO-226AE Reel Configuration: Fi gur e 5.0
Carrier T ape Thickness Carrier Tape W idth Hold - down T ape W idth Hold - down T ape position Feed H ole P osition Sprocket Hole Diam eter Lead Spring O ut
E LE CT ROS TA TIC S EN SI TIV E D EV ICE S
Note : All d imensions ar in inches. e
D4
D1
ITEM D ESCRIPT IO N
SYMBO L
MINIMUM
MAXIMUM
F63TNR Label
D2
Reel Diamet er Arbor H ole Diam eter (Standard)
D1 D2 D2 D3 D4 W1 W2 W3
13 .975 1.160 0. 0 65 3. 0 10 2. 0 70 0.370 1.630
14 .025 1.200 0.700 3.300 3.100 0.570 1.690 2.09 0
Custom ized Label
(Small H ole) Core D iam eter Hub R ecess Inner Diam eter Hu Recess Dept h b Flange to F lange Inner W idth
W1
Hu b to Hu b Cente r W idth
W3
W2
Note: All dimensions are inches
D3
October 1999, Rev. A1
TO-226AE Package Dimensions
TO-226AE (FS PKG Code 95, 99)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.300
S4.70-4.32; S1.52-1.02;
2" TYP
S7.87-7.37;
S7.73-7.10;
S1.65-1.27;
2" TYP
0.51
S0.760.36;
S15.61-14.47;
S0.51-0.36;
S0.48-0.30;
S1.401.14;
S1.40-1.14;
PIN
99 E B C
95 E C B
S4.45-3.81; 1 5" TYP 2 3
1
2
3
TO-226AE (95,99)
S2.41-2.13;
For leadformed option ordering, refer to Tape & Reel data information.
October 1999, Rev. A1
©2000 Fairchild Semiconductor International
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Rev. G
