1N4007G

Data Sheet 250 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions JEDEC D0-35 .060 .090 .120 .200 1.00 Min. Description 1N914 .018 .022 Features n PLANAR PROCESS n 250 mW POWER DISSIPATION n INDUSTRY STANDARD D0-35 PACKAGE n MEETS UL SPECIFICATION 94V-0 1N914 Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Power Dissipation...PD Operating Temperature Range...TJ Storage Temperature Range...TSTRG Electrical Characteristics Maximum Forward Voltage...VF @ IF = 100 mA Maximum DC Reverse Current...IR @ VR = 70v Maximum Frequency ...f Maximum Diode Capacitance, VR = 6V, f = 1MHz...CD Maximum Reverse Recovery Time...tRR .01 uF PVV = 100nS 5K Ohms 50 Ohms RG = 50 Ohms Page 8-2 1N914 80 80 Units Volts Volts ............................................. 100 ............................................... mAmps ............................................. 300 ............................................... mAmps mW ............................................. 250 ............................................... °C ......................................... -25 to 85 .......................................... °C ......................................... -55 to 125 .......................................... ............................................. 1.2 ............................................... ............................................. ............................................. ............................................. ............................................. 0.1 100 3.5 4.0 Volts ............................................... µ Amps ............................................... MHz pF ............................................... ns ............................................... Test Device Under Test Output IF IR Trr 0.1 IR