1N4448

Data Sheet 500 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions JEDEC D0-35 .060 .090 .120 .200 1.00 Min. 1N4448 Description .018 .022 Features n PLANAR PROCESS n 500 mW POWER DISSIPATION n INDUSTRY STANDARD DO-35 PACKAGE n MEETS UL SPECIFICATION 94V-0 1N4448 Units Volts Volts Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Power Dissipation...PD Operating Temperature Range...TJ Storage Temperature Range...TSTRG Electrical Characteristics Maximum Forward Voltage...VF @ IF = 100 mA Maximum DC Reverse Current...IR @ VR = 75v Maximum Frequency...f Maximum Diode Capacitance...CD Maximum Reverse Recovery Time...tRR .01 uF 5K Ohms 50 Ohms RG = 50 Ohms Page 8-6 1N4448 100 75 ............................................. 215 ............................................... mAmps ............................................. 500 ............................................... mAmps ............................................. 500 ............................................... mW ......................................... -25 to 85 .......................................... °C °C ......................................... -65 to 150 .......................................... ............................................. 1.0 ............................................... ............................................. ............................................. ............................................. ............................................. 5.0 100 2.0 4.0 ............................................... ............................................... ............................................... ............................................... Output Trr IR 0.1 IR Volts µAmps MHz pF ns Test Device Under Test IF