CMP0817BAX-E

CMP0817BAx-E Document Title 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM CMOS LPRAM Revision History Revision No. 0.0 0.1 0.2 0.3 Initial Draft Add tCP=10ns in AC characteristics Minor Changes Minor Changes Modified functional description & MRS update timing Minor Changes Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions Removed the MRS DPD function Minor Changes Removed 60ns part descriptions History Draft date Dec. 22nd, 2003 Mar. 10th, 2004 Jul. 6th, 2004 Nov. 8th, 2004 Remark Preliminary Final Final Final 0.4 Oct. 26th, 2005 Final 0.5 Aug. 22nd, 2006 Final 1 Revision 0.5 Aug. 2006 CMP0817BAx-E FEATURES • Process Technology : Full CMOS • Organization : 512K x 16 • Power Supply Voltage : 2.7~3.3V • Low Power & Page Modes CMP0817BA1 : support the PASR function CMP0817BA2 : support the DPD function CMP0817BA4 : support the PASR/PAGE function CMP0817BA5 : support the DPD/PAGE function CMOS LPRAM 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM • Three state output and TTL Compatible • Package Type : 48-FBGA-6.00x8.00 mm2 • Separated I/O power(VCCQ) & Core Power(VCC) • Page read/write operation up to 16 words (CMP0817BA4, CMP0817BA5) • DPD mode when /ZZ goes low (CMP0817BA2, CMP0817BA5) PRODUCT FAMILY Operating Temperature Operating Voltage (V) Speed Min. Typ. Max. CMP0817BAx-F70E Extended (-25~85’C) 2.7 3.0 3.3 70ns Typ. 1.5mA Power Dissipation ICC1 f = 1MHz Max. 3mA ICC2 f = fmax Typ. 12mA Max. 20mA ISB1 (CMOS Standby Current) Typ. 30uA Max. 70uA Product Family 1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C. 2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Precharge circuit. A B C D E F G H /LB I/O9 /OE /UB A0 A3 A1 A4 A2 /CS /ZZ I/O1 Clk gen. VCC VSS Memory array I/O10 VSS I/O11 I/O12 A5 A17 A6 A7 A16 I/O2 I/O4 I/O5 I/O3 VCC VSS Row Addresses Row select VCCQ I/O15 I/O16 A18 I/O13 I/O14 NC A8 DNU A14 A12 A9 A15 A13 A10 I/O6 I/O7 I/O8 I/O1~I/O8 Data cont I/O Circuit Column select /WE A11 NC I/O9~I/O16 Data cont 48-FBGA : Top View(Ball Down) Name /ZZ /CS /OE /WE A0~A18 I/O1~I/O16 NC Function Low Power Modes Chip Select Input Output Enable Input Write Enable Input Address Inputs Data Inputs/Outputs No Connection Name VCC VCCQ VSS /UB /LB DNU Function Core Power I/O Power Ground Upper Byte(I/O9~16) Lower Byte(I/O 1~8) Do Not Use /CS /OE /WE /UB /LB /ZZ Control Logic Data cont Column Addresses 2 Revision 0.5 Aug. 2006 CMP0817BAx-E PRODUCT LIST Extended Temperature Products(-25~85’C) Part Name CMP0817BAx-F70E 1. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER CMOS LPRAM Function 48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V) FUNCTIONAL DESCRIPTION /CS H X1) H X1) L /ZZ H L L H H H /OE X1) X1) X1) X1) H H /WE X1) X1) X1) X1) H H /LB X1) X1) X1) H L X1) L L L H X1) L H H L L H L 1. X means don’t care.(Must be low or high state) 2. In case of CMP0817BA2 & CMP0817BA5 product 3. In case of CMP0817BA1 & CMP0817BA4 product /UB X1) X1) X1) H X1) L H L L H L L I/O1-8 High-Z High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din I/O9-16 High-Z High-Z High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z Din Din Mode Deselected Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write Power Standby DPD2) Low Power Modes3) Standby Active Active Active Active Active Active Active Active ABSOLUTE MAXIMUM RATINGS1) Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT Vcc PD TSTG TA Ratings -0.2 to Vcc+0.3V -0.2 to 3.6 1.0 -65 to 150 -25 to 85 Unit V V W ’C ’C 1. Str es s e s g r e ate r tha n th o s e l i st e d u n d er “ A bsolute Maxim um Ratings” may cause permanent dam age to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS1) Item Supply voltage I/O operating voltage (VCCQ ≤ VCC) Ground Input high voltage Input low voltage Symbol VCC VCCQ VSS VIH VIL CMP0817BA Min 2.7 2.7 0 0.8VCCQ -0.23) Max 3.3 3.3 0 VCC+0.22) 0.2VCCQ Min 2.7 2.25 0 0.8VCCQ -0.23) Max 3.3 2.75 0 VCC+0.22) 0.2VCCQ Min 2.7 1.65 0 0.8VCCQ -0.23) Max 3.3 1.95 0 VCC+0.22) 0.2VCCQ Unit V V V V V Note : 1.TA=-25 to 85’C, otherwise specified. 2. Overshoot : Vcc+1.0V in case of pulse width≤20ns. 3. Undershoot : -1.0V in case of pulse width≤20ns. 4. Overshoot and undershoot are sampled, not 100% tested. 3 Revision 0.5 Aug. 2006 CMP0817BAx-E CAPACITANCE1) (f=1MHz , TA=25’C) Item Input capacitance Input/Output capacitance 1. Capacitance is sampled, not 100% tested. CMOS LPRAM Symbol CIN CIO Test Condition VIN=0V VIO=0V Min Max 8 8 Unit pF pF DC AND OPERATING CHARACTERISTICS Item Input leakage current Output leakage current Symbol ILI ILO ICC1 Average operating current ICC2 Output low voltage Output high voltage Standby Current(TTL) Standby Current(CMOS) Deep Power Down Current1) Low Power Modes VOL VOH ISB ISB1 ISB0 ISB0a ISB0b ISB0c VIN=VSS to VCC /CS=VIH, /ZZ=VIH, /OE=VIH or /WE=VIL, VIO=VSS to VCC Cycle time=1us, 100%duty, IIO=0mA, /CS≤0.2V, /ZZ=VIH, VIN≤0.2V or VIN≥VCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, /CS=VIL, /ZZ=VIH, VIN=VIL or VIH IOL=0.5mA IOH=-0.5mA /CS=VIH, /ZZ=VIH, Other inputs=VIH or VIL /CS≥VCC-0.2V, /ZZ≥VCC-0.2V, Other inputs=0~VCC /ZZ≤0.2V, Other inputs=0~VCC, No refresh(DPD) /ZZ≤0.2V, Other inputs=0~VCC, ¼ refresh area selection /ZZ≤0.2V, Other inputs=0~VCC, ½ refresh area selection /ZZ≤0.2V, Other inputs=0~VCC, All refresh area selection 0.8VCCQ 0.3 70 10 40 50 70 Test Conditions Min -1 -1 Typ Max 1 1 3 25 0.2VCCQ Unit uA uA mA mA V V mA uA uA uA uA uA 1. CMP0817BA2 & CMP0817BA5 products support DPD(Deep Power Down) Current 4 Revision 0.5 Aug. 2006 CMP0817BAx-E AC OPERATING CONDITIONS TEST CONDITIONS(Test Load and Input/Output Reference) Input pulse level : 0.2 to VCC-0.2V Input rising and falling time : 5ns Input and output reference voltage : 0.5*VCCQ Output load(see right) : CL=30pF+1TTL 30pf CMOS LPRAM 1TTL AC CHARACTERISTICS(VCC=2.7V~3.3V, Extended product : TA=-25 to 85’C) Parameter List Symbol Min Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output /UB, /LB Access Time Read Chip Select to Low-Z Output /UB, /LB Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High- Z Output /UB, /LB Disable to High- Z Output Output Disable to High- Z Output Output Hold from Address Change Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write /UB, /LB Valid to End of Write Write Write Pulse Width Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z Page Mode Cycle Time Page Page Mode Address Access Time Maximum Cycle Time /CS High Pulse Width1) tRC tAA tCO tOE tBA tLZ tBLZ tOLZ tHZ tBHZ tOHZ tOH tWC tCW tAS tAW tBW tWP tWR tWHZ tDW tDH tOW tPC tPAA tMRC tCP 70 10 10 5 0 0 0 5 70 60 0 60 60 50 0 0 20 0 5 25 10 70ns Max 80k 70 70 25 70 5 5 5 80k 5 25 80k ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Units 1. /CS High Pulse Width is defined by /CS or (/UB and /LB) because /UB & /LB can make standby mode when /UB=High and /LB=High. 5 Revision 0.5 Aug. 2006 CMP0817BAx-E Power Up Sequence 1. Apply Power 2. Maintain stable power for a minimum of 200us with /CS=VIH CMOS LPRAM Standby Mode State machines Power On /CS=VIH Wait 200us Initial State /CS=VIH, /ZZ=VIH /CS=VIL, /ZZ=VIH /UB or/and /LB=VIL /CS=VIH, /ZZ=VIL Active Mode /CS=VIlL /ZZ=VIH /CS=VIH (or/and /UB=/LB=VIH) /ZZ=VIH /CS=VIH, /ZZ=VIL /CS=VIH /ZZ=VIL /CS=VIlL /ZZ=VIH Standby Mode Low Power Modes 1 (8M/4M/2M bits) DPD (Data Invalid) /CS=VIH, /ZZ=VIL Standby Mode Characteristics Mode Standby Deep Power Down Mode Memory Cell Data Valid Invalid ¼ valid Low Power Modes ½ valid valid Standby Current(uA) 70 (ISB1) 10 (ISB0) 40 (ISB0a) 50 (ISB0b) 70 (ISB0c) Wait Time(us) 0 200 0 0 0 6 Revision 0.5 Aug. 2006 CMP0817BAx-E READ CYCLE (1) Address tOH tAA CMOS LPRAM tRC (Address controlled,/CS=/OE=VIL, /ZZ=/WE=VIH, /UB or/and /LB=VIL) Data Out Previous Data Valid Data Valid READ CYCLE (2) Address (/ZZ=/WE=VIH) tRC tAA tCO tOH /CS tHZ /UB, /LB /OE tOLZ tBLZ tLZ tBA tBHZ tOE tOHZ Data Out High-Z Data Valid 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 80us. PAGE READ CYCLE (/ZZ=/WE=VIH, 16 words access) tMRC tRC tPC tPC tPC tPC tPC tPC tPC A0~A3 tAA A4~A18 tOH /CS /UB, /LB /OE tCO tHZ tBA tBHZ tOE tOLZ tBLZ tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid Data Valid tOHZ Data Out High-Z tLZ 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 80us. 7 Revision 0.5 Aug. 2006 CMP0817BAx-E WRITE CYCLE (1) Address tCW(2) CMOS LPRAM tWC (/WE controlled, /ZZ=VIH) /CS tAW tWR(4) /UB, /LB /WE tAS(3) tBW tWP(1) tDW tDH High-Z tOW Data in Data Out High-Z tWHZ Data Valid Data Undefined WRITE CYCLE (2) Address (/CS controlled, /ZZ=/WE=VIH) tWC tAS(3) tCW(2) tAW tWR(4) /CS /UB, /LB /WE Data in Data Out High-Z tBW tWP(1) tDW tDH Data Valid High-Z WRITE CYCLE (3) Address (/UB, /LB controlled, /ZZ=VIH) tWC tCW(2) tWR(4) /CS tAW /UB, /LB tAS(3) tBW tWP(1) /WE Data in Data Out tDW tDH Data Valid High-Z High-Z 1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 80us. 8 Revision 0.5 Aug. 2006 CMP0817BAx-E PAGE WRITE CYCLE (Address controlled, /ZZ=VIH) tMRC tWC tPC tPC tPC tPC tPC tPC CMOS LPRAM tPC A0~A3 A4~A18 /CS /UB, /LB tAS(3) /WE tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH Data in High-Z tWHZ Data Valid Data Valid Data Valid Data Valid Data Valid Data Valid Data Valid Data Valid High-Z tOW Data Out Data Undefined 1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and /WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 80us. 9 Revision 0.5 Aug. 2006 CMP0817BAx-E LOW POWER MODES 1. Mode Register Set A18 ~ A5 A4 A3 A2 A1 CMOS LPRAM A0 0 1 Array On/Off on /ZZ Half Selection Array Refresh Area Array Refresh Area A1 0 0 1 1 A0 0 1 0 1 Type Full Array (Default) RFU1) ½ Array ¼ Array Half Selection (Top / Bottom) A2 0 1 Type Bottom (Default) Top Array On/Off on /ZZ A3 0 1 Type Partial Array Refresh Mode (Default) Reduced Memory Size Mode 1. RFU : Reserved for the Future Use Note: The RMS(Reduced Memory Size) mode is enabled after /ZZ goes high and remains enabled after /ZZ goes high. To change to a different mode, the mode register will have to be rewritten. 2. MRS Update tWC Address tAS(3) tCW(2) tWR(4) /CS tAW /UB, /LB /WE tZZWE tBW tWP(1) /ZZ Register Write Start Register Write Complete Register Update Complete The register update take place on the rising edge of /ZZ. Once the register is updated, the next time /ZZ goes low, without any updates to the register starting within the tZZWE max time of 1us, the part will refresh the array selected. The data bus is a don’t care When /ZZ is low during the register updates. 10 Revision 0.5 Aug. 2006 CMP0817BAx-E 3. Deep Power Down Mode Entry/Exit tZZmin CMOS LPRAM /ZZ vil tCDR vih tR /CS Parameter tCDR tR(Deep Power Down Mode only) tZZmin Description Chip Deselect to ZZ Low Operation Recovery Time Low Power Mode Time Min 0 200 10 Max - Units ns us us 4. Address Information Partial Array Refresh Mode (A3=0, A4=1) A2 0 0 X 1 1 A1,A0 11 10 00 11 10 Refresh Section 1/4 1/2 Full 1/4 1/2 Address 00000h-1FFFFh 00000h-3FFFFh 00000h-7FFFFh 60000h-7FFFFh 40000h-7FFFFh Size 128Kbx16 256Kbx16 512Kbx16 128Kbx16 256Kbx16 Density 2Mb 4Mb 8Mb 2Mb 4Mb Reduced Memory Size Mode (A3=1, A4=1) A2 0 0 1 1 A1,A0 11 10 11 10 Refresh Section 1/4 1/2 1/4 1/2 Address 00000h-1FFFFh 00000h-3FFFFh 60000h-7FFFFh 40000h-7FFFFh Size 128Kbx16 256Kbx16 128Kbx16 256Kbx16 Density 2Mb 4Mb 2Mb 4Mb 11 Revision 0.5 Aug. 2006 CMP0817BAx-E PACKAGE DIMENSION 48 BALL FINE PITCH BGA(0.75mm ball pitch) Top View Bottom View B B B1 CMOS LPRAM Unit : millimeters A1 INDEX MARK 0.05 0.05 6 A B 5 4 3 2 1 #A1 C D C1 E C1/2 F G H B/2 Detail A 0.25/Typ. A Y Max 6.10 8.10 0.40 0.30 0.08 NOTES. 1. Bump counts : 48(8row x 6column) 2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.) 3. All tolerance are +/-0.050 unless otherwise specified. 4. Typ : Typical 5. Y is coplanarity : 0.08(Max) Side View E2 D E1 E 0.30 C C A B B1 C C1 D E E1 E2 Y Min 5.90 7.90 0.30 0.20 - Typ 0.75 6.00 3.75 8.00 5.25 0.35 1.00 0.75 0.25 - 0.85/Typ. 12 Revision 0.5 Aug. 2006 C