CMP1617BX4

CMP1617BAx-E Document Title 1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM CMOS LPRAM Revision History Revision No. 0.0 Initial Draft Add Direct DPD Modify MRS Entry Modify PASR Current Change speed from 60nsec to 55nsec Modify ISB1, PASR Current Modified functional description & MRS update timing Minor Changes Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions Add AC Parameter (tCP) History Draft date Dec. 22nd, 2003 Remark Preliminary 0.1 Mar. 15th, 2004 Preliminary 0.2 Sep. 21th, 2004 Final 0.3 0.4 0.5 Nov. 8th, 2004 Nov. 1st, 2005 Jul. 25th, 2006 Final Final Final 1 Revision 0.5 Jul. 2006 CMP1617BAx-E FEATURES • Process Technology : Full CMOS • Organization : 1M x 16 • Power Supply Voltage : 2.7~3.3V • Low Power & Page Modes CMP1617BX1 : support the PASR/MRS DPD function CMP1617BX2 : support the Direct DPD function CMP1617BX4 : support the PASR/MRS DPD/PAGE function CMP1617BX5 : support the Direct DPD/PAGE function CMOS LPRAM 1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM • Three state output and TTL Compatible • Package Type : 48-FBGA-6.00x8.00 mm2 • Separated I/O power(VCCQ) & Core Power(VCC) • Page read/write operation by 16 words (CMP1617BA4, CMP1617BA5) • DPD mode by using MRS only (CMP1617BA1, CMP1617BA4) • Direct DPD mode when /ZZ goes low (CMP1617BA2, CMP1617BA5) PRODUCT FAMILY Operating Temperature Operating Voltage (V) Speed Min. Typ. Max. CMP1617BAx-F60E CMP1617BAx-F70E Extended (-25~85’C) 60ns 70ns Typ. 1.5mA Power Dissipation ICC1 f = 1MHz Max. 3mA ICC2 f = fmax Typ. 15mA 12mA Max. 25mA ISB1 (CMOS Standby Current) Typ. 50uA Max. 100uA Product Family 2.7 3.0 3.3 1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C. 2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Precharge circuit. A B C D E F G H /LB I/O9 /OE /UB A0 A3 A1 A4 A2 /CS /ZZ I/O1 Clk gen. VCC VSS Memory array I/O10 VSS I/O11 I/O12 A5 A17 A6 A7 A16 I/O2 I/O4 I/O5 I/O3 VCC VSS Row Addresses Row select VCCQ I/O15 I/O16 A18 I/O13 I/O14 A19 A8 DNU A14 A12 A9 A15 A13 A10 I/O6 I/O7 I/O8 I/O1~I/O8 Data cont I/O Circuit Column select WE A11 NC I/O9~I/O16 Data cont 48-FBGA : Top View(Ball Down) Name /ZZ /CS /OE /WE A0~A19 I/O1~I/O16 NC Function Low Power Modes Chip Select Input Output Enable Input Write Enable Input Address Inputs Data Inputs/Outputs No Connection Name VCC VCCQ VSS /UB /LB DNU Function Core Power I/O Power Ground Upper Byte(I/O9~16) Lower Byte(I/O 1~8) Do Not Use /CS /OE /WE /UB /LB /ZZ Control Logic Data cont Column Addresses 2 Revision 0.5 Jul. 2006 CMP1617BAx-E PRODUCT LIST Extended Temperature Products(-25~85’C) Part Name CMP1617BAx-F60E CMP1617BAx-F70E 1. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER CMOS LPRAM Function 48-FBGA, 60ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V) 48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V) FUNCTIONAL DESCRIPTION /CS H X1) H X1) L /ZZ H L L H H H /OE X1) X1) X1) X1) H H /WE X1) X1) X1) X1) H H /LB X1) X1) X1) H L X1) L L L H X1) L H H L L H L 1. X means don’t care.(Must be low or high state) 2. In case of CMP1617BA2 & CMP1617BA5 product 3. In case of CMP1617BA1 & CMP1617BA4 product /UB X1) X1) X1) H X1) L H L L H L L I/O1-8 High-Z High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din I/O9-16 High-Z High-Z High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z Din Din Mode Deselected Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write Power Standby Direct DPD2) Low Power Modes3) Standby Active Active Active Active Active Active Active Active ABSOLUTE MAXIMUM RATINGS1) Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT Vcc PD TSTG TA Ratings -0.2 to Vcc+0.3V -0.2 to 3.6 1.0 -65 to 150 -25 to 85 Unit V V W ’C ’C 1. Str es s e s g r e ate r tha n th o s e l i st e d u n d er “ A bsolute Maxim um Ratings” may cause permanent dam age to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS1) Item Supply voltage I/O operating voltage (VCCQ ≤ VCC) Ground Input high voltage Input low voltage Symbol VCC VCCQ VSS VIH VIL CMP1617BA Min 2.7 2.7 0 0.8VCCQ -0.23) Max 3.3 3.3 0 VCC+0.22) 0.2VCCQ Min 2.7 2.25 0 0.8VCCQ -0.23) Max 3.3 2.75 0 VCC+0.22) 0.2VCCQ Min 2.7 1.65 0 0.8VCCQ -0.23) Max 3.3 1.95 0 VCC+0.22) 0.2VCCQ Unit V V V V V Note : 1.TA=-25 to 85’C, otherwise specified. 2. Overshoot : Vcc+1.0V in case of pulse width≤20ns. 3. Undershoot : -1.0V in case of pulse width≤20ns. 4. Overshoot and undershoot are sampled, not 100% tested. 3 Revision 0.5 Jul. 2006 CMP1617BAx-E CAPACITANCE1) (f=1MHz , TA=25’C) Item Input capacitance Input/Output capacitance 1. Capacitance is sampled, not 100% tested. CMOS LPRAM Symbol CIN CIO Test Condition VIN=0V VIO=0V Min Max 8 8 Unit pF pF DC AND OPERATING CHARACTERISTICS Item Input leakage current Output leakage current Symbol ILI ILO ICC1 Average operating current ICC2 Output low voltage Output high voltage Standby Current(TTL) Standby Current(CMOS) VOL VOH ISB ISB1 ISB0 Low Power Modes ISB0a ISB0b ISB0c VIN=VSS to VCC /CS=VIH, /ZZ=VIH, /OE=VIH or /WE=VIL, VIO=VSS to VCC Cycle time=1us, 100%duty, IIO=0mA, /CS≤0.2V, /ZZ=VIH, VIN≤0.2V or VIN≥VCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, /CS=VIL, /ZZ=VIH, VIN=VIL or VIH IOL=0.5mA IOH=-0.5mA /CS=VIH, /ZZ=VIH, Other inputs=VIH or VIL /CS≥VCC-0.2V, /ZZ≥VCC-0.2V, Other inputs=0~VCC /ZZ≤0.2V, Other inputs=0~VCC, No refresh(DPD) /ZZ≤0.2V, Other inputs=0~VCC, ¼ refresh area selection /ZZ≤0.2V, Other inputs=0~VCC, ½ refresh area selection /ZZ≤0.2V, Other inputs=0~VCC, All refresh area selection 0.8VCCQ 0.3 100 10 55 70 100 Test Conditions Min -1 -1 Typ Max 1 1 3 25 0.2VCCQ Unit uA uA mA mA V V mA uA uA uA uA uA 4 Revision 0.5 Jul. 2006 CMP1617BAx-E AC OPERATING CONDITIONS TEST CONDITIONS(Test Load and Input/Output Reference) Input pulse level : 0.2 to VCC-0.2V Input rising and falling time : 5ns Input and output reference voltage : 0.5*VCCQ Output load(see right) : CL=30pF+1TTL 30pf CMOS LPRAM 1TTL AC CHARACTERISTICS(VCC=2.7V~3.3V, Extended product : TA=-25 to 85’C) Speed Bins Parameter List Symbol Min Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output /UB, /LB Access Time Read Chip Select to Low-Z Output /UB, /LB Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High- Z Output /UB, /LB Disable to High- Z Output Output Disable to High- Z Output Output Hold from Address Change Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write /UB, /LB Valid to End of Write Write Write Pulse Width Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z Page Mode Cycle Time Page Page Mode Address Access Time Maximum Cycle Time /CS High Pulse Width tRC tAA tCO tOE tBA tLZ tBLZ tOLZ tHZ tBHZ tOHZ tOH tWC tCW tAS tAW tBW tWP tWR tWHZ tDW tDH tOW tPC tPAA tMRC tCP 60 10 10 5 0 0 0 5 60 50 0 50 50 50 0 0 20 0 5 25 10 60ns Max 40k 60 60 25 60 5 5 5 40k 5 25 40k Min 70 10 10 5 0 0 0 5 70 60 0 60 60 50 0 0 20 0 5 25 10 70ns Max 40k 70 70 25 70 5 5 5 40k 5 25 40k ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Units 1. /CS High Pulse Width is defined by /CS or (/UB and /LB) because /UB & /LB can make standby mode when /UB=High and /LB=High. 5 Revision 0.5 Jul. 2006 CMP1617BAx-E Power Up Sequence 1. Apply Power 2. Maintain stable power for a minimum of 200us with /CS=VIH CMOS LPRAM Standby Mode State machines Power On /CS=VIH Wait 200us Initial State /CS=VIH, /ZZ=VIH /CS=VIL, /ZZ=VIH /UB or/and /LB=VIL /CS=VIH, /ZZ=VIL Active Mode /CS=VIL /ZZ=VIH /CS=VIH (or/and /UB=/LB=VIH) /ZZ=VIH /CS=VIH, /ZZ=VIL /CS=VIH /ZZ=VIL /CS=VIlL /ZZ=VIH Standby Mode Low Power Modes 1 (16M/8M/4M bits) Low Power Modes 2 (Data Invalid) /CS=VIH, /ZZ=VIL Standby Mode Characteristics Mode Standby Memory Cell Data Valid Invalid ¼ valid Low Power Modes ½ valid valid 70 (ISB0b) 100 (ISB0c) 0 0 Standby Current(uA) 100 (ISB1) 10 (ISB0) 55 (ISB0a) Wait Time(us) 0 200 0 6 Revision 0.5 Jul. 2006 CMP1617BAx-E READ CYCLE (1) Address tOH tAA CMOS LPRAM tRC (Address controlled,/CS=/OE=VIL, /ZZ=/WE=VIH, /UB or/and /LB=VIL) Data Out Previous Data Valid Data Valid READ CYCLE (2) Address (/ZZ=/WE=VIH) tRC tAA tCO tOH /CS tHZ /UB, /LB /OE tOLZ tBLZ tLZ tBA tBHZ tOE tOHZ Data Out High-Z Data Valid 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us. PAGE READ CYCLE (/ZZ=/WE=VIH, 16 words access) tMRC tRC tPC tPC tPC tPC tPC tPC tPC A0~A3 tAA A4~A20 tOH /CS /UB, /LB /OE tCO tHZ tBA tBHZ tOE tOLZ tBLZ tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid Data Valid tOHZ Data Out High-Z tLZ 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us. 7 Revision 0.5 Jul. 2006 CMP1617BAx-E WRITE CYCLE (1) Address tCW(2) CMOS LPRAM tWC (/WE controlled, /ZZ=VIH) /CS tAW tWR(4) /UB, /LB /WE tAS(3) tBW tWP(1) tDW tDH High-Z tOW Data in Data Out High-Z tWHZ Data Valid Data Undefined WRITE CYCLE (2) Address (/CS controlled, /ZZ=/WE=VIH) tWC tAS(3) tCW(2) tAW tWR(4) /CS /UB, /LB /WE Data in Data Out High-Z tBW tWP(1) tDW tDH Data Valid High-Z WRITE CYCLE (3) Address (/UB, /LB controlled, /ZZ=VIH) tWC tCW(2) tWR(4) /CS tAW /UB, /LB tAS(3) tBW tWP(1) /WE Data in Data Out tDW tDH Data Valid High-Z High-Z 1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us. 8 Revision 0.5 Jul. 2006 CMP1617BAx-E PAGE WRITE CYCLE (Address controlled, /ZZ=VIH) tMRC tWC tPC tPC tPC tPC tPC tPC CMOS LPRAM tPC A0~A3 A4~A20 /CS /UB, /LB tAS(3) /WE tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH Data in High-Z tWHZ Data Valid Data Valid Data Valid Data Valid Data Valid Data Valid Data Valid Data Valid High-Z tOW Data Out Data Undefined 1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and /WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us. 9 Revision 0.5 Jul. 2006 CMP1617BAx-E LOW POWER MODES 1. Mode Register Set A19 ~ A5 A4 A3 A2 A1 CMOS LPRAM A0 0 ZZ Enable/Disable Array On/Off on /ZZ Half Selection Array Refresh Area /ZZ Enable/Disable A4 0 1 Type Deep Power Down Enable DPD Disable (Default) Array On/Off on /ZZ A3 0 1 Type Partial Array Refresh Mode (Default) Reduced Memory Size Mode Note: If the register is written to enable the Deep Power Down, the part will go into Deep Power Down during the following time that /ZZ is driven low and there is no MRS update. When /ZZ is driven high, all of the register settings will return to default state for the part (i.e. full array refresh, Deep Power Down Disabled). Note: The RMS(Reduced Memory Size) mode is enabled after /ZZ goes high and remains enabled after /ZZ goes high. To change to a different mode, the mode register will have to be rewritten. Half Selection (Top / Bottom) A2 0 1 Type Bottom (Default) Top Array Refresh Area A1 0 0 1 1 A0 0 1 0 1 Type Full Array (Default) RFU ½ Array ¼ Array 2. MRS Update tWC Address tAS(3) tCW(2) tWR(4) /CS tAW /UB, /LB /WE tZZWE tBW tWP(1) /ZZ Register Write Start Register Write Complete Register Update Complete The register update take place on the rising edge of /ZZ. Once the register is updated, the next time /ZZ goes low, without any updates to the register starting within the tZZWE max time of 1us, the part will refresh the array selected. The data bus is a don’t care When /ZZ is low during the register updates. 10 Revision 0.5 Jul. 2006 CMP1617BAx-E 3. Deep Power Down Mode Entry/Exit tWC CMOS LPRAM A4 tAS(3) tCW(2 ) tAW tWR(4 ) /CS /UB, /LB /WE tZZWE tBW tWP(1) tR tZZmin Next Cycle /ZZ Register Write(DPD) Deep Power down start Deep Power down exit Parameter tZZWE tR(Deep Power Down Mode only) tZZmin Description ZZ low to Write Enable Low Operation Recovery Time Low Power Mode Time Min 0 200 10 Max 1 - Units us us us 4. Address Information Partial Array Refresh Mode (A3=0, A4=1) A2 0 0 X 1 1 A1,A0 11 10 00 11 10 Refresh Section 1/4 1/2 Full 1/4 1/2 Address 00000h-3FFFFh 00000h-7FFFFh 00000h-FFFFFh C0000h-FFFFFh 80000h-FFFFFh Size 256Kbx16 512Kbx16 1Mbx16 256Kbx16 512Kbx16 Density 4Mb 8Mb 16Mb 4Mb 8Mb Reduced Memory Size Mode (A3=1, A4=1) A2 0 0 1 1 A1,A0 11 10 11 10 Refresh Section 1/4 1/2 1/4 1/2 Address 00000h-3FFFFh 00000h-7FFFFh C0000h-FFFFFh 80000h-FFFFFh Size 256Kbx16 512Kbx16 256Kbx16 512bx16 Density 4Mb 8Mb 4Mb 8Mb 11 Revision 0.5 Jul. 2006 CMP1617BAx-E PACKAGE DIMENSION 48 BALL FINE PITCH BGA(0.75mm ball pitch) Top View Bottom View B B B1 CMOS LPRAM Unit : millimeters A1 INDEX MARK 0.05 0.05 6 A B 5 4 3 2 1 #A1 C D C1 E C1/2 F G H B/2 Detail A 0.25/Typ. A Y Max 6.10 8.10 0.40 1.20 0.30 0.08 NOTES. 1. Bump counts : 48(8row x 6column) 2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.) 3. All tolerance are +/-0.050 unless otherwise specified. 4. Typ : Typical 5. Y is coplanarity : 0.08(Max) Side View E2 D E1 E 0.30 C C A B B1 C C1 D E E1 E2 Y Min 5.90 7.90 0.30 0.20 - Typ 0.75 6.00 3.75 8.00 5.25 0.35 1.10 0.85 0.25 - 0.85/Typ. 12 Revision 0.5 Jul. 2006 C