FMA219

FMA219 X-BAND LNA MMIC FEATURES: • • • • • • 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports Datasheet v3.0 LAYOUT: GENERAL DESCRIPTION: The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0 to 11.0 GHz. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally stable if the input port is open-circuited. TYPICAL APPLICATIONS: • • Low noise front end amplifiers General X-Band gain block ELECTRICAL SPECIFICATIONS: PARAMETER Operating Frequency Bandwidth Small Signal Gain Operating Current Small Signal Gain Flatness Noise Figure SYMBOL BW S21 IOP ∆S21 NF CONDITIONS VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP No RF input VDD = +3 V IDD = IOP VDD = +3 V, IDD = IOP VDD = +3 V, IDD = IOP POUT = +1.5 dBm SCL VDD = +3 V VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP MIN 7 19 50 TYP MAX 11 UNITS GHz dB mA 21 65 ±0.5 1.1 23 80 ±0.8 1.4 dB 3rd Order Intermodulation Distortion Power at 1dB Compression Input Return Loss Input Return Loss @ 9.5GHz + 10GHz Output Return Loss Reverse Isolation IMD P1dB S11 S11(9.5+10GHz) S22 S12 -47 11.5 12.5 -7 -3 -4 -16 -40 -10 -30 dBc dBm dB dB dB dB Note: TAMBIENT = 22°C 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA219 Datasheet v3.0 ABSOLUTE MAXIMUM RATING : PARAMETER Supply Voltage Supply Current RF Input Power Storage Temperature Total Power Dissipation Gain Compression Thermal Resistance 4 2,3 1 SYMBOL VDD IDD PIN TSTG PTOT Comp. ΘJC TEST CONDITIONS For any operating current For VDD < 5V For standard bias conditions Non-Operating Storage See De-Rating Note below Under any bias conditions 750mW dissipation, heatsink temp 22°C ABSOLUTE MAXIMUM 6V 100mA 5dBm -40°C to 150°C 750mW 5dB 175°C/W Notes: 1. TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2. Total Power Dissipation is defined as: PTOT = PDC + PIN – POUT where PDC = DC Bias Power, PIN = RF Input Power, POUT = RF Output Power Total Power Dissipation shall be de-rated above 22°C as follows: PTOT = (150 – TCASE ) / ΘJC W where TCASE = Temperature of the on the underside of the package or substrate 3. The quoted Thermal Resistance value is a worst-case figure assuming Gold/Tin die attach onto a Copper substrate. The use of epoxy die attach and substrate materials of lower thermal conductivity will increase the Thermal Resistance. Further information and assistance is available on request. 4. ΘJC increases linearly from 175°C/W at a TCASE of 22°C to 210°C/W at a TCASE of 145°C PAD LAYOUT: PAD NAME A B IN DESCRIPTION PIN COORDINATES (µm) 102, 888 1527, 843 1177, 103 RFIN ROUT A B C VD Drain Voltage Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening C DIE SIZE (µm) 1624 x 1624 DIE THICKNESS (µm) 100 MIN. BOND PAD PITCH (µm) >150 MIN. BOND PAD OPENING (µm x µm ) 92 x 92 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA219 Datasheet v3.0 TYPICAL MEASURED PERFORMANCE ON WAFER: Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated RF PERFORMANCE (VDD = +3V, IDD = IOP) FMA219 FREQUENCY RESPONSE 1.4 NOISE FIGURE F M A219B F N O IS E F IG U R E 24 SSG, Input / Output Return Loss (dB) 1.3 1.2 1.1 20 16 12 8 4 0 -4 -8 -12 -16 -20 5 6 7 8 9 10 11 12 13 14 15 Frequency [GHz] S21 Noise Figure (dB) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 7 8 9 10 11 Fre q ue n c y (G H z ) Note: Multiple traces show typical die variation across a 150mm (6") wafer. Effect of typical bond wire inductances (25µm dia. 1mm length, 2 each on input and output ports) is less than a 0.5dB decrease in S21 (@11GHz), and no measurable effect on noise figure. POWER TRANSFER CHARACTERISTIC FMA219BF POWER TRANSFER CHARACTERISTIC 16.0 Pout@7GHz Pout@9GHz 3RD-ORDER INTERMODULATION IMP O U TSvs. IN U PO ERA 9.0GH R DC PT W T z -15.00 4.0 14.0 3.5 11.0 Pout Im dB 3, c -20.00 12.0 Output Power (dBm) Pout@11GHz Comp@7GHz 3.0 Compression Point, (dB) 10.0 Comp@9GHz Comp@11GHz 2.5 8.0 2.0 6.0 1.5 O 9.0 u tp ut Po 7.0 w e r (d B 5.0 m ) 3.0 IM Pr od uc -30.00 ts (d B c -35.00 ) -25.00 4.0 1.0 -40.00 2.0 0.5 0.0 -23.0 -21.0 -19.0 -17.0 -15.0 -13.0 Pin (dBm) -11.0 -9.0 -7.0 -5.0 0.0 -3.0 1.0 -19.0 -45.00 -17.0 -15.0 -13.0 Input Pow r (dB ) em -11.0 -9.0 -7.0 Note: Equivalent output IP3 performance exceeds 24dBm, input IP3 is typically ≥+2dBm. 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA219 Datasheet v3.0 S-PARAMETERS (Vdd= 3.0V; Idd= 72mA): FREQ-GHZ 1 1.245 1.49 1.735 1.98 2.225 2.47 2.715 2.96 3.205 3.45 3.695 3.94 4.185 4.43 4.675 4.92 5.165 5.41 5.655 5.9 6.145 6.39 6.635 6.88 7.125 7.37 7.615 7.86 8.105 8.35 8.595 8.84 9.085 9.33 9.575 9.82 10.065 10.31 10.555 10.8 11.045 11.29 11.535 11.78 12.025 12.27 12.515 12.76 13.005 13.25 13.495 13.74 13.985 14.23 14.475 14.72 14.965 15.21 15.455 15.7 15.945 S11MAG 0.974 0.968 0.963 0.959 0.958 0.96 0.965 0.973 0.958 0.934 0.95 0.968 0.988 1.007 1.035 1.069 0.951 0.945 1.021 1.034 1.004 0.927 0.807 0.658 0.504 0.367 0.268 0.227 0.24 0.283 0.337 0.388 0.435 0.478 0.514 0.545 0.572 0.593 0.608 0.618 0.626 0.63 0.627 0.622 0.615 0.604 0.589 0.575 0.561 0.544 0.524 0.506 0.488 0.469 0.451 0.434 0.418 0.397 0.378 0.361 0.348 0.333 S11ANG -106.62 -125.3 -141.67 -156.2 -169.47 178.08 166.1 154.02 141.23 131.54 121.28 109.94 97.76 84.85 70.66 54.25 28.15 29.43 10.5 -9.95 -31.51 -53.66 -75.49 -95.15 -111.08 -120.38 -119.71 -109.46 -99.07 -96.28 -99.06 -105.01 -111.94 -119.7 -127.72 -135.89 -143.88 -151.64 -159.12 -166.45 -173.69 179.26 172.58 166.17 160.01 154.16 148.47 142.93 137.71 133.07 128.55 124.13 119.86 115.96 112.04 108.26 105.67 102.87 99.79 96.52 93.94 92.37 S21MAG 0.068 0.079 0.092 0.096 0.1 0.104 0.112 0.132 0.148 0.171 0.251 0.367 0.535 0.778 1.151 1.771 2.926 2.061 3.203 4.536 6.024 7.547 8.943 10.049 10.815 11.268 11.522 11.667 11.737 11.775 11.806 11.826 11.843 11.844 11.852 11.846 11.827 11.781 11.726 11.649 11.557 11.432 11.269 11.091 10.896 10.683 10.437 10.175 9.907 9.609 9.318 9.005 8.698 8.368 8.03 7.686 7.342 7.02 6.696 6.365 6.054 5.737 S21ANG -115.04 -144.82 -165.53 168.17 145.39 123.02 99.66 73.18 45.25 31.12 16.56 0.21 -15.43 -30.42 -45.48 -62.52 -102.1 -105.45 -113.56 -131.16 -151.54 -173.34 164.5 142.79 122.24 103.33 86.07 70.26 55.61 41.94 28.96 16.67 4.87 -6.52 -17.58 -28.41 -39.01 -49.39 -59.5 -69.51 -79.38 -89.1 -98.68 -108.08 -117.3 -126.44 -135.33 -144.15 -152.79 -161.3 -169.65 -177.82 173.99 166.14 158.31 150.71 143.44 136.17 129.12 122.22 115.62 109.22 S12MAG 0 0 0.001 0.001 0 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.002 0.002 0.002 0.003 0.009 0.004 0.003 0.004 0.005 0.006 0.007 0.009 0.01 0.01 0.011 0.011 0.012 0.012 0.013 0.013 0.014 0.014 0.015 0.015 0.016 0.016 0.016 0.017 0.017 0.017 0.017 0.018 0.017 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.017 0.017 0.017 0.017 0.017 0.017 0.017 S12ANG 107.89 96.58 76.88 55.16 53.04 46.09 23.97 42.06 52.06 18.31 -4.07 3.18 -9.97 -30.48 -27.77 -49.44 -120.99 118.66 65.1 24.75 -1.95 -23.74 -45.39 -65.6 -82.43 -97.87 -113.2 -125.36 -137.61 -146.86 -157.24 -165.6 -174.09 178.62 170.72 163.57 157.72 150.1 143.61 136.33 128.78 123.33 117.93 111.68 107.41 101.82 96.04 91.31 85.97 82.16 77.5 73.7 70.16 64.24 61.86 57.54 54.93 52.45 48.74 45.51 41.29 40.04 S22MAG 0.74 0.641 0.568 0.514 0.474 0.445 0.421 0.402 0.386 0.37 0.356 0.342 0.328 0.312 0.296 0.281 0.305 0.259 0.222 0.19 0.156 0.12 0.085 0.055 0.032 0.013 0.003 0.018 0.033 0.049 0.065 0.081 0.098 0.114 0.129 0.144 0.158 0.171 0.183 0.193 0.202 0.208 0.213 0.217 0.22 0.222 0.225 0.229 0.235 0.244 0.254 0.266 0.282 0.3 0.321 0.344 0.367 0.388 0.409 0.429 0.45 0.471 S22ANG -117.91 -135.03 -147.1 -156.86 -164.33 -170.58 -176 179.01 174.19 169.6 165.04 160.47 155.92 151.5 147.18 143.68 140.84 124.29 118.27 111.03 103.14 95.2 88.64 84.7 83.47 87.06 -101.15 -91.84 -91.39 -91.83 -92.12 -93.19 -94.77 -96.84 -99.55 -102.25 -104.77 -107.68 -110.27 -112.92 -115.51 -117.39 -119.05 -120.38 -121.13 -121.27 -120.82 -120.02 -118.85 -117.85 -116.67 -115.65 -114.8 -114.41 -114.35 -115.16 -116.62 -118.17 -120.11 -121.83 -123.8 -125.99 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA219 Datasheet v3.0 RECOMMENDED ASSEMBLY SCHEMATIC: 75µm nominal gap on each side Input and output thin film substrates with 50Ω microstrip transmission lines. Substrate thickness 250µm or thinner is recommended. 25µm dia. Au wire (x2) on input and output ports, less than 1000µm length each Note: The supply de-coupling capacitor (150 pF recommended value) should be placed as close to the MMIC as practical. 150pF capacitor To +VDD 250µm Au ribbon recommended PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallised and the recommended mounting method is by the use of conductive epoxy following the manufacturer’s recommended curing temperature. For eutectic 80/20 gold/tin solder, use a stage temperature of 280-300°C for a maximum time of 60s. Use forming gas (90%N2, 10% H2) for best results. Recommended lead bond technique is thermocompression wedge bonding with 25µm diameter wire. The bond tool force shall be 35-38g. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER FMA219 HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions 5 DESCRIPTION Die Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com