FMA246

PRELIMINARY • PERFORMANCE ♦ 8.0 – 14.0 GHz Operating Bandwidth ♦ 2.5 dB Noise Figure ♦ 30 dB Small-Signal Gain ♦ 19 dm Output Power ♦ +6V Single Bias Supply ♦ Adjustable Operating Current ♦ DC De-coupled Input and Output Ports FMA246 HIGH-GAIN X-BAND MMIC • DESCRIPTION AND APPLICATIONS The FMA246 is a 3-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over the 8 to 14 GHz bandwidth. The amplifier requires a single +6V supply and one off-chip component for supply de-coupling; the supply voltage can be varied from +3V to +6V if needed. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. Operating current can be adjusted using the Source resistor ladders located along the bottom edge, by bonding a particular pad to ground. Typical applications include general (low noise) gain block utilizations in X-band. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally stable if the input port is open-circuited. • ELECTRICAL SPECIFICATIONS AT 22°C Parameter Operating Frequency Bandwidth Small Signal Gain Saturated Drain Current (see Note) Operating Current Small Signal Gain Flatness Noise Figure 3 -Order Intermodulation Distortion Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation rd Symbol BW S21 IDSS IDQ ∆S21 NF IMD P1dB S11 S22 S12 Test Conditions VDD = +6 V IDD ≈ 60% IDSS VDD = +3V VDD = +6V VDD = +6 V IDD ≈ 60% IDSS VDD = +6 V IDD ≈ 60% IDSS VDD = +6 V IDD ≈ 60% IDSS POUT = +9 dBm SCL VDD = +6 V IDD ≈ 60% IDSS VDD = +6 V IDD ≈ 60% IDSS VDD = +6 V IDD ≈ 60% IDSS VDD = +6 V IDD ≈ 60% IDSS Min 8 27 220 145 2.3 Typ 29 250 170 ± 0.6 2.5 -44 Max 14 31 280 195 ± 1.0 2.8 Units GHz dB mA mA dB dB dBc 18 20 -10 -16 -60 22 -8 -9 -50 dBm dB dB dB • NOTE: Continuous operation at IDSS is not recommended Phone: +1 408 850-5790 www.filcs.com Revised: 7/28/04 Email: sales@filcsi.com PRELIMINARY ABSOLUTE MAXIMUM RATINGS1 Parameter Supply Voltage Supply Current RF Input Power Storage Temperature Total Power Dissipation Gain Compression 1 FMA246 HIGH-GAIN X-BAND MMIC Symbol VDD IDD PIN TSTG PTOT Comp. 2 2 Test Conditions For any operating current For VDD < 7V For standard bias conditions Non-Operating Storage See De-Rating Note below Under any bias conditions Min Max 8 75% IDSS -8 Units V mA dBm ºC mW dB -40 150 1400 5 Simultaneous Combination of Limits TAmbient = 22°C unless otherwise noted 2 or more Max. Limits 80 % Users should avoid exceeding 80% of 2 or more Limits simultaneously Notes: • Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device. • Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where: PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • Total Power Dissipation to be de-rated as follows above 22°C: PTOT = 1.4 - (0.004W/°C) x TCARRIER where TCARRIER = carrier or heatsink temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55°C carrier temperature: PTOT = 1.4 - (0.004 x (55 – 22)) = 1.26W • For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with some degradation in thermal de-rating performance (PTOT = 550mW) • Note on Thermal Resistivity: The nominal value of 250°C/W is stated for the input stage, which will reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 80°C/W. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Phone: +1 408 850-5790 www.filcs.com Revised: 7/28/04 Email: sales@filcsi.com PRELIMINARY FMA246 HIGH-GAIN X-BAND MMIC • MECHANICAL OUTLINE: Notes: 1) All units are in microns, unless otherwise specified. 2) All bond pads are 100x100 µm2 3) Bias pad (VDD) size is 100x100 µm2 Phone: +1 408 850-5790 www.filcs.com Revised: 7/28/04 Email: sales@filcsi.com PRELIMINARY FMA246 HIGH-GAIN X-BAND MMIC • MECHANICAL OUTLINE: Notes: 4) All units are in microns, unless otherwise specified. 5) All bond pads are 100x100 µm2 6) Bias pad (VDD) size is 100x100 µm2 Phone: +1 408 850-5790 www.filcs.com Revised: 7/28/04 Email: sales@filcsi.com