FMA3058-000-WP

FMA3058 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • 15dB Gain Low Noise Amplifier Single Supply (Self Biased +5V @ 90mA) 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control Input Return Loss < -12 dB Output Return Loss < -10 dB Pilot Datasheet v2.5 FUNCTIONAL SCHEMATIC: VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3058 is a high performance 2-20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation and electronic warfare applications. The die is fabricated using the Filtronic 0.25µm process. The Circuit is DC blocked at both the RF input and the RF output. TYPICAL APPLICATIONS: • • • • Test Instrumentation Electronic Warfare Broadband Communication Infrastructure Fiber Optics ELECTRICAL SPECIFICATIONS (SMALL-SIGNAL UNLESS OTHERWISE STATED): PARAMETER Small Signal Gain Gain Flatness Input Return Loss Output Return Loss Output Power at 1dB compression point CONDITIONS 2-20 GHz 2-20 GHz 2-20 GHz 2-20 GHz 2 GHz, 5V drain bias 10 GHz, 5V drain bias 20 GHz, 5V drain bias MIN – – – – – – – – – – – TYP 15 – -12 -10 18 18 15 90 3.5 3 6.5 MAX – 3 – – – – – – – – – UNITS dB dB dB dB dBm dBm dBm mA dB dB dB Drain Current Noise Figure 5V drain bias 2 GHz, 5V drain bias 10 GHz, 5V drain bias 20 GHz, 5V drain bias Note: TAMBIENT = +25°C, Z0 = 50Ω Pads B and C open circuit DIFFERENT BIAS CONFIGURATIONS: The device has a default current, set by an on chip resistor. Pads B and C can be bonded to ground to increase the device current by reducing the default resistance. 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3058 Pilot Datasheet v2.5 ABSOLUTE MAXIMUM RATINGS: PARAMETER Max Input Power Drain Voltage Total Power Dissipation Thermal Resistivity Operating Temp Storage Temp SYMBOL Pin VDD ABSOLUTE MAXIMUM +20dBm +12V PAD REF A B C PAD NAME IN R2 R1 OUT GND VD VG DESCRIPTION RF Input Internal Source Bias Resistor Internal Source Bias Resistor RF Output Ground Drain voltage Optional Gate Voltage Ptot θJC Toper Tstor TBD D E F G TBD -55°C to +85°C -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD LAYOUT: 1.500 1.443 1.369 0.050 0.134 0.185 0.269 GFE 2.966 3.066 D 1.141 1.041 0.506 0.422 0.385 0.301 0.530 0.430 0 REF A C B Dimensions in mm. 0 REF 0.054 0.154 2.914 2.988 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com 3.120 FMA3058 Pilot Datasheet v2.5 TYPICAL PERFORMANCE ON-WAFER: Note: Measurement Conditions ID= 90 mA, VDD= 5 V, TAMBIENT = 25°C, Pads B and C open circuit. Gain 20.00 18.00 16.00 14.00 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) 0.00 -10.00 -20.00 S12 ( dB) -30.00 -40.00 -50.00 -60.00 -70.00 2 4 6 Re ve r s e Is olation S21 ( dB) 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) Input r e tur n L os s 0.00 -5.00 -10.00 S11 ( dB) S22 ( dB) 0.00 -5.00 - 10.00 - 15.00 - 20.00 - 25.00 - 30.00 - 35.00 - 40.00 Out put r e t urn L os s -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) 2 4 6 8 10 12 14 16 18 20 Fr e qu e ncy (GHz ) Nois e Figur e 8 7 Noise Figure (dB) 6 5 4 3 2 1 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy (GHz ) P1dB 20 18 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 Fr e qu e ncy (GHz ) 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com P1dB ( dBm) Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3058 Pilot Datasheet v2.5 TYPICAL PERFORMANCE ON-WAFER OVER TEMPERATURE: Note: Measurement Conditions ID= 90 mA, VDD= 5 V, Pads B and C open circuit. TAMBIENT = 25°C TCOLD = -55°C THOT = +85°C Gain 20.00 18.00 16.00 14.00 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) 0.00 - 10.00 - 20.00 S12 ( dB) - 30.00 - 40.00 - 50.00 - 60.00 - 70.00 2 4 6 Re ve r s e Is olat ion S21 ( dB) 8 10 12 14 16 18 20 Fr e qu e ncy (GHz ) Input Re tur n Los s 0.00 -5.00 -10.00 S11 ( dB) S22 ( dB) 5.00 0.00 -5.00 - 10.00 - 15.00 - 20.00 - 25.00 - 30.00 - 35.00 - 40.00 Out put Re t ur n L os s -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) 0 2 4 6 8 10 12 14 16 18 20 Fr e qu e ncy (GHz ) P1dB 20 18 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy (GHz ) P1dB ( dBm) 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3058 Pilot Datasheet v2.5 BIASING CIRCUIT SCHEMATIC: VDD 100pF 100nF RF Output RF Input ASSEMBLY DIAGRAM: It is recommended that the RF connections be made using bond wires with 25µm diameter and a maximum length of 300µm. Ground connections should be made according to the required bias conditions. To Evaluation Board via an 0402 Surface Mounted capacitor (100nF) 100pF Chip Capacitor Ground connection User application 50 Ohms line 50 Ohms line User application BILL OF MATERIALS: COMPONENT All RF tracks should be 50Ω characteristic material Capacitor, 100pF, chip capacitor Capacitor, 100nF, 0402 5 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3058 Pilot Datasheet v2.5 PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290°C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260°C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. ORDERING INFORMATION: PART NUMBER FMA3058-000-WP (Gel-pak available on request) DESCRIPTION Die in Waffle-pack HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com