FMS2006

Advanced Product Information 1.1 FMS2006 DC- 6 GHz SPDT WLAN GaAs Low Loss Switch Features: ♦ ♦ ♦ ♦ Suitable for Multi-band WLAN Applications Excellent low control voltage performance Very low Insertion loss 25 dB at 6GHz typical RF1 RF2 Functional Schematic VC1 ANT VC2 GND GND Description and Applications: The FMS2006 is a low loss, multi-band single pole double throw Gallium Arsenide antenna switch designed for use in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology that offers leading edge performance optimised for switch applications. Simulated Electrical Specifications: Parameter Insertion Loss (All Paths) Isolation (All Paths) Return Loss 2nd Harmonic Level 3rd Harmonic Level Switching speed P1dB (TAMBIENT = 25°C,Vctrl = 0V/(2.4V,+3.3V), ZIN = ZOUT = 50Ω) Conditions (0.5-6) GHz, Small Signal (0.5-6) GHz, Small Signal (0.5-6) GHz, Small Signal 3 GHz, Pin = 20dBm, Vctrl =2.4V 3 GHz, Pin = 20dBm, Vctrl =2.4V Vctrl=2.4V, Pin=20dBm 2.4V control Min Typ 0.55 25 20 -70 -70 30 30 Max Units dB dB dB dBc dBc ns dBm Note: External DC blocking capacitors are required on all RF ports (typ: 47pF) 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Advanced Product Information 1.1 FMS2006 Truth Table: Vctrl1 High Low Vctrl2 Low High ANT-RF1 On Off ANT-RF2 Off On Note: ‘High’ ‘Low’ = +2.4V to +3.3V = 0V to +0.2V Pad and Die Layout: VC1 ANT RF1 VC2 RF2 GND1 GND2 Pad Reference ANT RF1 RF2 VC1 VC2 GND1 GND2 Description Antenna Receive Transmit Vctrl1 (ANT to RF1 Control) Vctrl2 (ANT to RF2 Control) Ground Ground Pin Coordinates (µm) 375,412 108,260 641,260 108,412 641,412 108,108 641,108 Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size ( µm x µm ) 750 x 510 Die Thickness (µm) 150 Min. Bond Pad Pitch(µm) 152 Min. Bond pad Opening (µm xµm ) 72 x 72 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Advanced Product Information 1.1 FMS2006 Simulated Performance: Insertion Loss -0.48 -0.5 Loss (dB) -0.52 -0.54 -0.56 -0.58 0.5 2.5 4.5 6 Frequency (GHz) Isolation -25 Isolation (dB) -30 -35 -40 -45 0.5 2.5 4.5 6 Frequency (GHz) Return Loss -15 -20 S11 (dB) -25 -30 -35 0.5 2.5 4.5 6 Frequency (GHz) 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Advanced Product Information 1.2 FMS2006 Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filsi.com Website: www.filcs.com