FMS2007

Preliminary Data Sheet 2.2 FMS2007 DC-6GHz DPDT Diversity Switch Features: ♦ ♦ ♦ ♦ ♦ Low Insertion loss Low Harmonic Distortion High Transmit-Receive Isolation Suitable for WLAN 802.11a and 802.11b/g Applications Filtronic Advanced GaAs pHEMT Technology Functional Schematic V4 TX V3 ANT1 ANT2 Description and Applications: V1 RX V2 The FMS2007 is a low loss linear Double-Pole Double-Throw dual band diversity switch designed for use in WLAN applications. Typical applications are for UNII, Hiperlan, 802.11a and 802.11b/g systems that employ two antennas for transmit and receive diversity. Electrical Specifications: Parameter Insertion Loss Insertion Loss Return Loss Return Loss Tx-Rx Isolation Tx-Rx Isolation 2nd Harmonic Level 3rd Harmonic Level Switching speed (TAMBIENT = 25°C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions 2.4GHz 6GHz 2.4GHz 6GHz 2.4GHz 6GHz 2.4, 6 GHz, Pin = 20dBm, Vctrl = 2.4V 2.4, 6 GHz, Pin = 20dBm, Vctrl =2.4V Vctrl=2.4V, Pin=20dBm 10% to 90% RF and 90% to 10% RF Min Typ 0.9 1.3 16 12 Max 1.1 1.5 Units dB dB dB dB dB dB dBc dBc ns 27 27 39 28 -70 -70 30 Note: External DC blocking capacitors are required on all RF ports (typ: 47pF). All unused ports terminated in 50Ω. 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Preliminary Data Sheet 2.2 FMS2007 Absolute Maximum Ratings: Parameter Max Input Power Control Voltage Operating Temperature Storage Temperature Absolute Maximum +27dBm +5V -40°C to +100°C -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: State 1 2 3 4 5 6 V1 HIGH LOW LOW LOW LOW HIGH V2 LOW HIGH LOW LOW HIGH LOW V3 LOW LOW HIGH LOW LOW HIGH V4 LOW LOW LOW HIGH HIGH LOW PATH(S) RX-ANT1 RX-ANT2 TX-ANT2 TX-ANT1 TX-ANT1 & RX-ANT2 TX-ANT2 & RX-ANT1 Note: ‘High’ ‘Low’ = +2.4V to +5V = 0V to +0.2V 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Preliminary Data Sheet 2.2 FMS2007 Pad and Die Layout: N M A B C D E L K J I H F Pad Number A B C D E F G H I J K L M N G Description Ground Antenna 1 Ground Antenna 2 Ground RX-Ant1 TX-Ant2 Ground Receive Ground Transmit Ground RX-Ant2 Tx-Ant1 Pad Name GND ANT1 GND ANT2 GND V1 V3 GND RX GND TX GND V2 V4 Pin Coordinates (x µm, y µm) (142.1 , 709.0) (142.1 , 581.6) (142.1 , 448.5) (142.1 ,327.9) (142.1 , 201.4) (349.8 , 88.5) (522.2 , 88.5) (769.2 , 201.4) (769.2 , 327.9) (769.2 , 448.5) (769.2 , 581.6) (769.2 , 709.0) (522.2 , 807.7) (349.8 , 807.7) Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (µm) 897x929 Die Thickness (µm) 150 Min. Bond Pad Pitch(µm) 127 Min. Bond pad opening (µm) 80x80 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Preliminary Data Sheet 2.2 FMS2007 Typical Performance Curves: On Wafer Measurements: Insertion Loss 0 -20 A1-TX Isolation -0.5 -25 -30 -1 -35 -1.5 -40 -2 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 -45 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 Evaluation Board: Insertion Loss 0 -0.5 -1 -1.5 -2 -2.5 -3 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 Return Loss 0 -10 -20 -30 -40 -50 -60 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 Note: Evaluation Board Insertion Loss to be corrected A1-TX, A2-RX Isolation -20 -20 RX-TX Isolation -30 -30 -40 -40 -50 -50 -60 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 -60 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Preliminary Data Sheet 2.2 FMS2007 Evaluation Board Data: BOM Label C1 Component Capacitor, 100pF, 0603 Capacitor, 47pF, 0402 ANT1 C1 C2 C2 C1 C2 TX C2 C2 C2 C2 C1 C1 ANT2 RX Evaluation Board Correction Data Frequency 2.4GHz 6.0GHz Insertion Loss 0.25dB 0.80dB 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Preliminary Data Sheet 2.2 FMS2007 Ordering Information: Part Number FMS2007-000-WP FMS2007-000-GP FMS2007-000-EB FMS2007-000-FF Description Die – waffle pak Die – gel pak Die mounted on evaluation board Wafer mounted on film frame Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com