FMS2010-000-EB

Preliminary Data Sheet 1.1 FMS2010 SP6T GaAs Multi-Band GSM Antenna Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Available in die form Suitable for multi-band GSM/DCS/PCS/EDGE applications Excellent low control voltage performance Excellent harmonic performance under GSM/ DCS/PCS power levels Very high Tx-Rx isolation >45dB typ. at 1.8GHz Very high Tx-Tx isolation >30dB typ. at 1.8GHz Very low Tx Insertion loss Very low control current TX1 VTX1 ANT ANT RX1 VRX1 RX2 VRX2 RX3 VTX2 TX2 VRXC VRX3 RX4 VRX4 Description and Applications: The FMS2010 is a low loss, high power and linear single pole six throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology that offers leading edge performance optimised for switch applications. The FMS2010 is designed for use in dual, tri and quad – band GSM handset antenna switch modules and RF front-end modules. Electrical Specifications: Parameter Tx Insertion Loss (TAMBIENT = 25°C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions 0.5 – 1.0 GHz 1.0 – 2.0 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 0.5 – 2.5 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33 dBm, 100% Duty Cycle (17:1 VSWR) 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33 dBm, 100% Duty Cycle (17:1 VSWR) 10% to 90% RF and 90% to 10% RF 50% control to 90% RF and 50% control to 10% RF Min __ __ __ __ __ 30 25 45 40 __ __ __ __ __ __ Typ 0.5 0.6 0.6 0.8 23 33 31 50 45 -75 -75 -75 -75 < 0.3 < 1.0 Max 0.7 0.9 0.8 1.2 __ __ __ __ __ Units dB dB dB dB dB dB dB dB dB dBc dBc dBc dBc µs µs Rx Insertion Loss Return Loss Isolation TX-TX Isolation TX-RX 2nd Harmonic Level -70 -70 -70 -70 __ __ 3rd Harmonic Level Switching speed : Trise, Tfall Ton, Toff Note: External DC blocking capacitors are required on all RF ports (typ: 100pF). All unused ports terminated in 50Ω. 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2010 Absolute Maximum Ratings: Parameter Max Input Power Control Voltage Operating Temp Storage Temp Absolute Maximum +38dBm +8.5V -40 °C to 100°C -55 °C to 150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: VRXC Low Low High High High High VRX4 Low Low Low Low Low High VTX2 Low High Low Low Low Low VRX3 Low Low Low Low High Low VRX1 Low Low High Low Low Low VRX2 Low Low Low High Low Low VTX1 High Low Low Low Low Low ON PATH ANT-TX1 ANT-TX2 ANT-RX1 ANT-RX2 ANT-RX3 ANT-RX4 Note: ‘High’ ‘Low’ = = +2.5V to +5V 0V to +0.2V 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2010 Pad and Die Layout: H J K L P O Q M N I A B C D E F G Pad Number A B C D E F G H I J K L M N O P Q Pad Name VRXC VRX4 VTX2 VRX3 VRX1 VRX2 VTX1 TX2 TX1 ANT RX4 RX3 RX2 RX1 GND GND GND Description Common Receive Switch Control Voltage RX4 Control Voltage TX2 Control Voltage RX3 Control Voltage RX1 Control Voltage RX2 Control Voltage TX1 Control Voltage TX2 RF Output TX1 RF Output Antenna RX4 RF Output RX3 RF Output RX2 RF Output RX1 RF Output Ground 1 Ground 2 Ground 3 Pin Coordinates (µm) 195, 126 315, 126 440, 126 556, 126 675, 126 795, 126 919, 126 108, 904 108, 242 474, 912 988, 880 988, 750 988, 420 988, 290 108, 514 108, 627 988, 525 Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (µm) 1100 x 1000 Die Thickness (µm) 150 µm Min. Bond Pad Pitch(µm) 113 Min. Bond pad opening (µm) 70 x 70 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2010 Typical Measured Performance Curves: TX Loss RX Loss TX-TX Isolation -10 RX-RX Isolation 0 -10 Isolation (dBm) Isolation (dB) -20 0.8 GHz -28.5 dB 1.8 GHz -23.3 dB -20 -30 -40 -50 -60 0.8 GHz -33.9 dB -30 1.8 GHz - 31.4 dB TX1 - TX2 Isolation TX2 - TX1 Isolation RX3 - RX1 Isolation RX2 - RX1 Isolation RX4 - RX2 Isolation -40 0.5 1 1.5 Frequency (GHz) 2 2.5 0.5 1 1.5 Frequency (GHz) 2 2.5 TX-RX Isolation -20 TX Harmonic Level Isolation (dBm) -40 0.8 GHz -50.5 dB 1.8 GHz -45.1 dB -60 1.8 GHz -47.7 dB RX3 - TX1 Isolation RX4 - TX2 Isolation RX2 - TX2 Isolation -80 0.5 1 1.5 Frequency (GHz) 2 2.5 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2010 Evaluation Board: C2 C2 C2 C2 C2 C2 C2 C1 C3 C1 C1 C1 C1 C1 C1 C3 C3 C3 C3 C3 C3 BOM Label C1 C2 C3 Component Capacitor, 47pF, 0402 Capacitor, 470pF, 0603 Capacitor, 100pF, 0402 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2010 Ordering Information: Part Number FMS2010-000-WP FMS2010-000-GP FMS2010-000-EB FMS2010-000-FF Description Die – waffle pak Die – gel-pak Die mounted on evaluation board Wafer mounted on film frame Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com