FMS2024-000

FMS2024 DC–20 GHZ MMIC SPDT REFLECTIVE SWITCH FEATURES • • • • • Low insertion loss: 1.4 dB at 20 GHz High isolation: 37 dB at 20 GHz All reflective design Excellent low control voltage performance Available in die form RFIN Production Datasheet v3.0 FUNCTIONAL SCHEMATIC V2 V1 RFO1 V11 V22 GENERAL DESCRIPTION The FMS2024 is a low loss high isolation broadband single-pole-double-throw Gallium Arsenide switch, designed on the FL05 0.5µm switch process from Filtronic. This process technology offers leading-edge performance optimised for switch applications. The FMS2024 is developed for the broadband communications, instrumentation and electronic warfare markets. V33 V44 V3 V4 RFO2 TYPICAL APPLICATIONS • • • • Broadband communications Test Instrumentation Fiber Optics Electronic warfare (ECM, ESM) ELECTRICAL SPECIFICATIONS (small-signal unless otherwise stated) PARAMETER CONDITIONS DC 5 GHz 10 GHz 15 GHz 20 GHz DC – 20 GHz DC – 20 GHz DC – 20 GHz 2 GHz 10 GHz 20 GHz 20% to 80% RF 80% to 20% RF 50% DC to 80% RF 50% DC to 20% RF MIN -1 -1.25 -1.6 -1.6 -1.8 – – – 23 22 22 – – – – TYP -0.7 -0.85 -1.1 -1.2 -1.35 -37 -14 -15 26 24 24 20 40 30 50 MAX – – – – – -34 -11 -11 – – – – – – – UNITS dB dB dB dB dB dB dB dB dBm Insertion Loss Isolation Input Return Loss Output Return Loss P1dB Switching speed ns Note 1: TAMBIENT = 25°C, Vctrl = 0V/-5V, ZIN = ZOUT = 50Ω. Note 2: Sub-10ns 10% to 90% and 90% to 10% switching speeds can be achieved by changing the operating voltage Vctrl from 0V / -5V to +1V / -5V. 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMS2024 Production Datasheet v3.0 ABSOLUTE MAXIMUM RATINGS PARAMETER Max Input Power Control Voltage Operating Temp Storage Temp SYMBOL Pin Vctrl Toper Tstor ABSOLUTE MAXIMUM +38dBm +1/-10V -40°C to +100°C -55°C to +150°C PAD NAME RFIN RFO1 RFO2 DESCRIPTION PIN COORDINATES (µm) 116,1055 1408,1929 1408,181 645, 1929 395, 1929 395, 181 645, 181 1753,1608 1753,1408 1753,702 1753,502 RFIN RFOUT1 RFOUT2 V1 V2 V3 V4 V11 V22 V33 V44 Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. V1 V2 V3 PAD LAYOUT V4 V11 V22 V33 V44 Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening DIE SIZE (µm) 1910 x 2110 DIE THICKNESS (µm) 100 MIN. BOND PAD PITCH (µm) 150 MIN. BOND PAD OPENING (µm x µm ) 116 x 116 TRUTH TABLE CONTROL LINES V1 OR V11 -5V 0V 0V RF PATH V4 OR V44 0V -5V 0V V2 OR V22 0V -5V -5V V3 OR V33 -5V 0V -5V RFIN-RFO1 On Off Off RFIN-RFO2 Off On Off Note 1: -5V ± 0.2V; 0V ± 0.2V Note 2: V11, V22, V33 and V44 are alternative control lines to V1, V2, V3 and V4 respectively 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMS2024 Production Datasheet v3.0 TYPICAL MEASURED PERFORMANCE ON WAFER: Note: Measurement conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25°C unless otherwise stated Ins e r t io n L os s 0.00 -0.20 -0.40 S21 ( dB) -0.60 -0.80 -1.00 -1.20 -1.40 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) S21 ( dB) 0.00 -10.00 -20.00 -30.00 -40.00 -50.00 -60.00 -70.00 -80.00 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) Is olat ion Input Re t u r n Los s 0.00 - 5.00 S11 (d B) S22 ( dB) 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 -45.00 Output Re tur n Los s - 10.00 - 15.00 - 20.00 - 25.00 - 30.00 0 2 4 6 8 10 12 14 16 18 20 Fr e q ue n cy ( GHz ) 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMS2024 Production Datasheet v3.0 TYPICAL MEASURED PERFORMANCE ON WAFER OVER TEMPERATURE: Note: Measurement conditions VCTRL= -5V (low) & 0V (high) TAMBIENT = 25°C TCOLD = -40°C THOT = +85°C In ser tion Lo ss 0.10 -0.10 -0.30 S21 ( d B) 0.00 - 10.00 - 20.00 - 30.00 - 40.00 - 50.00 - 60.00 - 70.00 - 80.00 Is olat ion S21 ( dB) -0.50 -0.70 -0.90 -1.10 -1.30 -1.50 0 2 4 6 8 10 12 14 16 18 20 Fr e q ue n cy ( GHz ) 0 2 4 6 8 10 12 14 16 18 20 Fr e q ue n cy ( GHz ) Input Re tur n L os s 0.00 -5.00 S11 ( dB) Out put Re t u r n Los s 0.00 - 5.00 - 10.00 S22 ( dB) - 15.00 - 20.00 - 25.00 - 30.00 - 35.00 - 40.00 - 45.00 -10.00 -15.00 -20.00 -25.00 -30.00 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) 0 2 4 6 8 10 12 14 16 18 20 Fr e q ue n cy ( GHz ) 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMS2024 Production Datasheet v3.0 PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallised and the recommended mounting method is by the use of solder or conductive epoxy. If epoxy is selected then it should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire be used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (250500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER FMS2024-000 DESCRIPTION Die in Waffle-pack (Gel-pak available on request) 5 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com