FMS2027-000

FMS2027 DC–20 GHZ MMIC SPDT ABSORPTIVE SWITCH FEATURES: • • • • • Low insertion loss: 2.1 dB at 20GHz High isolation: 42 dB at 20GHz Absorptive output in off-state Excellent low control voltage performance Available in die form Pre-Production Datasheet v3.0 FUNCTIONAL SCHEMATIC: RFIN GENERAL DESCRIPTION: The FMS2027 is a low-loss high-isolation broadband single-pole-double-throw Gallium Arsenide switch, designed on the FL05 0.5µm switch process from Filtronic. It offers absorptive properties from the output (50 Ohms termination). This process technology offers leading-edge performance optimised for switch applications. The FMS2027 is developed for the broadband communications, instrumentation and electronic warfare markets. RFO1 RFO2 TYPICAL APPLICATIONS: • • • • Broadband communications Test Instrumentation Fiber Optics Electronic warfare (ECM, ESM) ELECTRICAL SPECIFICATIONS (based on on-wafer measurements): Parameter Conditions DC 10 GHz 15 GHz 20 GHz DC-20 GHz DC-20 GHz DC-20 GHz DC-20 GHz 2 GHz 10 GHz 18 GHz Min -1 -1.5 -1.8 -2.3 – – – – 22 21 19 Typ -0.85 -1.3 -1.6 -2.1 -42 -12 -16 -22 23 22.5 21 Max – – – – -40 -10 -13 -12 – – – Units dB dB dB dB dB dB dB dB dBm dBm dBm Insertion Loss Isolation Input Retu rn Los s (ON state) Output Return Loss (ON state) Output Return Loss (OFF state) P1dB Switching speed 10% to 90% RF 90% to 10% RF 50% DC to 90% RF 50% DC to 10% RF – – – – 17 42 27 53 – – – – ns ns ns ns Note: TAMBIENT = 25°C, Vctrl = 0V/-5V, ZIN = ZOUT = 50Ω 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMS2027 Pre-Production Datasheet v3.0 ABSOLUTE MAXIMUM RATINGS: PARAMETER Max Input Power Control Voltage Operating Temp Storage Temp TRUTH TABLE: CONTROL LINE A -5V SYMBOL Pin Vctrl Toper Tstor ABSOLUTE MAXIMUM +38dBm – -40°C to +85°C -55°C to +150°C RF PATH RFIN-RFO1 ON OFF B 0V -5V RFIN-RFO2 OFF ON 0V Note: -5V ± 0.2V; 0V ± 0.2V Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD LAYOUT: B A RFIN A B PAD NAME RFIN RFO1 RFO2 A DESCRIPTION RFIN RFOUT1 RFOUT2 VA1 VA2 VA3 VA4 VB1 VB2 VB3 RFO1 AB A RFO2 A A A B Note: 1 Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening 2 Only one control line A and one control line B require connection B B DIE SIZE (µm) 1336 x 934 DIE THICKNESS (µm) 100 MIN. BOND PAD PITCH (µm) 150 MIN. BOND PAD OPENING (µm x µm ) 94 x 94 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMS2027 Pre-Production Datasheet v3.0 TYPICAL MEASURED PERFORMANCE ON WAFER: Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25°C. Both arms RFO1 and RFO2 are symmetrical. Inse r t ion Loss ( S21 ON) 0.00 -0.50 S21 ( dB) -1.00 -1.50 -2.00 -2.50 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) S21 ( dB) 0.00 -20.00 -40.00 -60.00 -80.00 -100.00 -120.00 0 2 Is olat ion ( S21 OFF) 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) Input Re t ur n Los s ( S11 ON) 0.00 -5.00 S11 (dB) S22 ( dB) 0.00 -5.00 - 10.00 - 15.00 - 20.00 - 25.00 Out put Re tur n Los s ( S22 ON) - 10.00 - 15.00 - 20.00 - 25.00 - 30.00 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) Abs or ptive Output Re tur n Los s ( S22 OFF) 0.00 P1dB 28.00 -10.00 24.00 P1dB ( dBm) 0 2 4 6 8 10 12 14 16 18 20 S22 (dB) -20.00 -30.00 -40.00 -50.00 -60.00 Fr e que ncy ( GHz ) 20.00 16.00 12.00 8.00 4.00 0.00 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMS2027 Pre-Production Datasheet v3.0 TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS OVER TEMPERATURE: Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT as indicated. Both arms RFO1 and RFO2 are symmetrical. TAMBIENT = 25°C TCOLD = -40°C THOT = +85°C Inser tion Loss ( S21 ON) 0.00 -0.50 S21 (dB) -1.00 -1.50 -2.00 -2.50 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy (GHz ) S21 (dB) 0.00 -10.00 -20.00 -30.00 -40.00 -50.00 -60.00 -70.00 -80.00 -90.00 0 2 4 Is olat ion (S21 OFF) 6 8 10 12 14 16 18 20 Fr e que ncy (GHz ) Input Re tur n Los s ( S11 ON) 0.00 -5.00 S11 (dB) Output Re tur n Los s (S22 ON) 0.00 -5.00 S22 (dB) - 10.00 - 15.00 - 20.00 - 25.00 - 10.00 - 15.00 - 20.00 - 25.00 - 30.00 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) Abs or ptive Output Re tur n Los s (S22 OFF) 0.00 - 10.00 - 20.00 S22(dB) - 30.00 - 40.00 - 50.00 - 60.00 0 2 4 6 8 10 12 14 16 18 20 Fr e que ncy ( GHz ) 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMS2027 Pre-Production Datasheet v3.0 PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallised and the recommended mounting method is by the use of solder or conductive epoxy. If epoxy is selected then it should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire be used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (250-500 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MILSTD-1686 and MIL-HDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER FMS2027-000 DESCRIPTION Die in Waffle-pack (Gel-pak available on request) 5 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com