HFE4082-321

DATA SHEET 1.25GBPS 850NM VCSEL TO-46 PACKAGE HFE408X-321 FEATURES: Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating Packaged with a photodetector The HFE408x-321 is a high-performance 850 nm VCSEL (Vertical Cavity SurfaceEmitting Laser) packaged for high-speed data communications. This product combines all the performance advantages of the VCSEL with a custom designed power monitor diode. The power monitor diode can be used with appropriate feedback control circuitry to set a maximum power level for each VCSEL. In addition, built-in power attenuation reduces the effective slope efficiency. These combined features simplify design for high data rate communication and eye safety. The HFE408x-321 is a high radiance VCSEL designed to convert electrical current into optical power that can be used in fiber optic communications and other applications. As the current varies above threshold, the light intensity increases proportionally. The HFE408x-321 is designed to be used with inexpensive silicon or gallium arsenide detectors (see HFD3081-103, HFD3081-108), but excellent performance can also be achieved with some indium gallium arsenide detectors. The low drive current requirement makes direct drive from PECL (Positive Emitter Coupled Logic) or EML (Emitter Coupled Logic) gates possible and eases driver design. The HFE408x-321 is designed to interface with 50/125 and 62.5/125 µm multimode fiber. They product circularly symmetric, non-astigmatic, narrow divergence beams that, with appropriate lensing, fiber couple all of the emitter power. Part Number HFE4081-321 HFE4082-321 Description Attenuated VCSEL with Back Monitor Photodiode - VCSEL Anode Common Attenuated VCSEL with Back Monitor Photodiode - VCSEL Cathode Common HFE408X-321 1.25GBPS 850NM VCSEL TO-46 PACKAGE ABSOLUTE MAXIMUM RATINGS Parameter INVISIBLE LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 3B LASER PRODUCT 30mW at 820-860 nm PER IEC/EN 60825-1/A2.2001 AND 21 CFR 1040.10 AND 1040.11 EXCEPT FOR DEVIATIONS PURSUANT TO LASER NOTICE NO.50 DATED 26 JULY 2001 Rating -40oC to +100oC 0oC to +70oC 260oC, 10 seconds 15mA 20mA 5V Storage temperature Operating temperature Lead solder temperature SEMICONDUCTOR LASER Laser continuous average current Laser peak forward current with pulse width less than 1µs Laser reverse voltage AVOID EXPOSURE: Invisible LASER radiation is emitted from this aperture. Advanced Optical Components 600 Millenium Drive, Allen, TX 75013 PN55449 LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 3B LASER PRODUCT NOTICE: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operations section for extended periods of time may affect reliability. HFE408X-321 ELECTRICAL-OPTICAL CHARACTERISTICS VCSEL Parameters Peak Operating Current Optical Power Output Threshold Current Threshold Current Temperature Variation Slope Efficiency Slope Efficiency Temperature variation Peak Wavelength λ P Temperature Variation Spectral Bandwidth, RMS Laser Forward Voltage Laser Reverse Voltage Rise and Fall Times Relative Intensity Noise Series Resistance Beam Divergence Photodiode Parameters Monitor Current Monitor current Temperature Variation Dark Current PD Reverse Voltage PD Capacitance T A = 0 o C to 70 o C Po =0.5mW T A = 0 o C to 70 o C I F =12mA I F =12mA I F =12mA I F =12 mA I R =10 µA Prebias Above Threshold, 20% -80% 1 GHz BW, I I F =12 mA I F =12 mA Test Condition Po =0.5mW Po =0.5mW Po =0mW, V R=3V Po =0mW, I R=10 µA V R =0V, Freq=1MHz V R =3V, Freq=1MHz F=12mA Test Condition Adjustable to establish operating power I F =12mA Symbol I peak Po I TH ∆ I TH η ∆ η /∆ T λP ∆ λ P/ ∆ T ∆λ VF BVR LD tr tf RIN RS θ Symbol I PD ∆ I PD / ∆ T ID BVR PD C 30 115 75 40 100 55 18 5 Min. 0.07 5 0.2 20 1.6 5 1.8 10 150 200 -128 25 15 Typ. 300 300 -122 40 20 Max. 0.250 830 0.3 1.5 -1.5 0.04 0.1 -0.5 850 0.06 0.85 2.2 860 Min. Typ. 12 0.6 3.5 Max. 20 1.2 6 1.5 0.16 Units mA mW mA mA mW/mA %/ oC nm nm/ o C nm V V ps dB/Hz Ohms Degrees Units mA %/ o C nA V pF 8 7 Notes 6 4 5 Notes 2 2,3 ELECTRO-OPTICAL CHARACTERISTICS (TA=25 oC unless otherwise stated) HFE408X-321 1.25GBPS 850NM VCSEL TO-46 PACKAGE NOTES 1. Reliability is a function of temperature, see www.finisar.com/aoc.php for details. Operating power is set by the peak operating current IPEAK=IBIAS+IMODULATION. For the purpose of these tests, IF is DC current. Threshold current varies as (TA – TO)2. It may either increase or decrease with temperature, depending upon relationship of TA to TO. The magnitude of the change is proportional to the threshold at TO. Slope efficiency is defined as ∆PO/∆IF. 8. 6. Rise and fall times specifications are the 20% - 80%. Most of the devices will measure