HFE4381-521

DATA SHEET 1.25GBPS 850NM VCSEL SC TOSA PACKAGE HFE438X-521 FEATURES: TO-46 tilt window metal can component, prealigned into SC Sleeve Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed ≥1 GHz Two different laser/ photodiode polarities Attenuating coating Packaged with a photodetector The HFE438x-521 is a high-performance 850 nm VCSEL (Vertical Cavity SurfaceEmitting Laser) packaged for high-speed data communications. This product combines all the performance advantages of the VCSEL with a custom designed power monitor diode. The power monitor diode can be used with appropriate feedback control circuitry to set a maximum power level for each VCSEL. In addition, built-in power attenuation reduces the effective slope efficiency. These combined features simplify design for high data rate communication and eye safety. Packaged in a fiber receptacle sleeve, this high radiance VCSEL is designed to convert electrical current into optical power that can be used in fiber optic communications and other applications. As the current varies above threshold, the light intensity increases proportionally. Data rates can vary from DC to above 2 Gb/s. The HFE438x-521 is designed to be used with inexpensive silicon or gallium arsenide detectors, but excellent performance can also be achieved with some indium gallium arsenide detectors (see HFD3381-108). The low drive current requirement makes direct drive from PECL (Positive Emitter Coupled Logic) or EML (Emitter Coupled Logic) gates possible and eases driver design. The HFE438x-521 is a prealigned and focused fiber optic transmitter designed to interface with 50/125 and 62.5/125 µm multi-mode fiber. Part Number HFE4380-521 Description SC TOSA with attenuated TO-46 component, VCSEL with Back Monitor Photodiode, Anode of VCSEL common with Photodiode Cathode SC TOSA with attenuated TO-46 component, VCSEL with Back Monitor Photodiode, Cathode of VCSEL common with Photodiode Anode HFE4381-521 HFE438X-521 1.25GBPS 850NM VCSEL ABSOLUTE MAXIMUM RATINGS Parameter INVISIBLE LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 3B LASER PRODUCT 30mW at 820-860 nm PER IEC/EN 60825-1/A2.2001 AND 21 CFR 1040.10 AND 1040.11 EXCEPT FOR DEVIATIONS PURSUANT TO LASER NOTICE NO.50 DATED 26 JULY 2001 Rating -40oC to +85oC -0 to +70oC 260oC, 10 seconds 5 mW Storage temperature Operating temperature Lead solder temperature SEMICONDUCTOR LASER Continuous Optical Output Power (Any Current) AVOID EXPOSURE: Invisible LASER radiation is emitted from this aperture. Advanced Optical Components 600 Millennium Drive, Allen, TX 75013 Laser Diode Reverse Voltage (IR=10 µA) Laser Continuous Forward Current, Heat-Sinked PIN Photodiode Forward Current PN55449 5V 15 mA 10 mA LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 3B LASER PRODUCT NOTICE: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operations section for extended periods of time may affect reliability. HFE438X-521 ELECTRICAL-OPTICAL CHARACTERISTICS VCSEL Parameters Average Fiber Coupled Power Test Condition I F =12 mA Symbol P OC Coupling Efficiency I F =12 mA Threshold Current Threshold Current Temperature T A = 0 oC to 70oC Variation Slope Efficiency P OC =0.35 mW Slope Efficiency Temperature Variation Peak Wavelength λ P Temp Coefficient Spectral Bandwidth Laser Forward Voltage Laser Reverse Voltage Rise and Fall Time Relative Intensity Noise Series Resistance Photodiode Parameters Monitor Current Monitor Current Temperature Variation Dark Current PD Reverse Voltage PD Capacitance T A = 0 C to 70 C I F =12mA I F =12 mA I F =12 mA, FWHM I F =12 mA I R =10 µA Bias Above Threshold (20%-80%) 1 GHz BW I F =12 mA Test Condition P OC =0.35 mW P OC =0.35 mW Po=0 mW, V R =3 V Po=0 mW, I R =10 µA V R =0 V , Freq=1 MHz V R =3 V, Freq=1 MHz o o Min. Typ. 350 -4.5 3.5 Max. PO_PCT I TH ∆ I TH η ∆η/∆T λP ∆λ P/∆T ∆λ VF BVR LD tR tF RIN RS Symbol I PD ∆I PD /∆T ID BVR PD C 65 -1.5 0.02 0.04 -0.5 830 850 0.06 1.0 1.6 5 1.8 10 150 200 -128 25 Typ. 0.0 20 30 115 75 40 100 55 2.2 300 300 -122 50 M ax. 0.58 860 6 1.5 0.1 Units µW dBm % mA mA mW/mA %/ C nm nm/oC nm V V ps dB/Hz Ohms Units mA %/ oC nA V pF o Notes 2 2 3 4 5 15 Min. 0.09 Notes ELECTRO-OPTICAL CHARACTERISTICS (TA=25 oC unless otherwise stated) HFE438X-521 1.25GBPS 850NM VCSEL NOTES 1. Reliability is a function of temperature, see www.finisar.com/aoc.php for details. For the purpose of these tests, IF is DC current. Threshold current varies as (TA – TO)2. It may either increase or decrease with temperature, depending upon relationship of TA to TO. The magnitude of the change is proportional to the threshold at TO. 4. 5) Slope efficiency is defined as ∆PO/∆IF. Rise and fall times specifications are the 20% - 80%. Most of the devices will measure