V850-TBD-001

DATA SHEET 10GBPS 850NM VCSEL ARRAYS V850-2106-001, V850-TBD-001 FEATURES: 850nm isolated cathode and anode VCSEL array Capable of 10Gbps per channel modulation Capable of flip chip mounting The V850-2106-001 and the V850-TBD-001 are high-performance 850 nm VCSEL (Vertical Cavity Surface-Emitting Laser) array die optimized for highspeed data communications. The array die are ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays are available in either 4 or 12 channel configurations. Each device is a high radiance VCSEL designed to convert electrical current into optical power that can be used in fiber optic communications and other applications. As the current varies above threshold, the light intensity increases proportionally. The V850-2106-001 and the V850-TBD-001are designed to be used with inexpensive silicon or gallium arsenide detectors, but excellent performance can also be achieved with some indium gallium arsenide detectors. The low drive current requirement makes direct drive from PECL (Positive Emitter Coupled Logic) or ECL (Emitter Coupled Logic) gates possible and eases driver design. Designed to interface with 50/125 and 62.5/125um multimode fiber, the VCSELs produce circularly symmetric, non-astigmatic, narrow divergence beams that, with appropriate lensing, fiber couple all of the emitter power. The dual top side contacts provide a minimum 1um Au for ease of wire bonding. Wire bonding should be done with minimal pressure to ensure the VCSEL is not damaged. The die must be mounted using thermally conductive media. The VCSEL arrays are shipped on medium tack blue tape in 6 inch grip rings. Part Number V850-2106-001 Description 10Gbps 4 channel VCSEL die array, dual top side contact, semiinsulating substrate. 10Gbps 12 channel VCSEL die array, dual top side contact, semiinsulating substrate V850-TBD-001 V850-2106-001, V850-TBD-001 10GBPS 850NM VCSEL ARRAY ABSOLUTE MAXIMUM RATINGS Parameter INVISIBLE LASER RADIATION DO NOT VIEW DIRECTLY WITH OPTICAL INSTRUMENTS 10mW at 820 - 860nm CLASS 1M LASER PRODUCT COMPLIES WITH IEC/EN 60825-1 Ed1.2:2001 COMPLIES WITH 21 CFR 1040.10 AND 1040-10.11 EXCEPT FOR DEVIATION PURSUANT TO LASER NOTICE NO.50 DATED 26 JULY 2001 Rating -40oC to +85oC 0 to +85oC 320oC, 30 sec. 5V 12mA 200V Storage temperature Operating temperature Maximum Die Exposure Temperature Reverse Power Supply Voltage Continuous Forward Current Advanced Optical Components 600 Millennium Drive, Allen, TX 75013 ESD exposure (Human body model) LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 1M LASER PRODUCT NOTICE: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operations section for extended periods of time may affect reliability. The inherent design of this component causes it to be sensitive to electrostatic discharge (ESD). To prevent ESD-induced damage and/or degradation to equipment, take normal ESD precautions when handling this product V850-2106-001, V850-TBD-001 ELECTRICAL-OPTICAL CHARACTERISTICS TA = 25oC unless otherwise stated VCSEL Parameters Optical Output Power Threshold Current TA=0 to 70ºC Threshold Current maximum TA=25 to 85ºC deviation from 25oC value TA=0 to 25ºC Temperature at minimum threshold current TA=25ºC Slope Efficiency TA=-40ºC TA=85ºC Slope Efficiency Temperature T =0 to 70ºC A Variation Peak Wavelength IF=6mA TA=0 to 70ºC IF=6mA TA=0 to 70ºC IF=6mA TA=0 to 70ºC IF=6mA T0 -10 0.3 0.5 Test Condition IF = 6.5mA Symbol PO ITH Min. 1.0 0.5 -0.25 Typ. 2.0 0.8 1.25 0.8 1.0 0.2 30 0.6 0.65 0.19 0.05 mW/mA 4 oC 3 Max. Uniformity 15% 0.2 0.2 mA 3 Units mW mA Notes 2 ΔITH η Δη/ΔT λP ΔλP/ΔT Δλ VTH VF Pmax 4.0 35 35 -135 40 RS 30 50 1.8 -2000 840 -7000 850 0.06 0.45 -10000 860 1 ppm/ºC nm nm/ºC 5 λP Temperature Variation RMS Spectral Bandwidth Theshold Voltage Laser Forward Voltage Rollover Rise/Fall Time Relative Intensity Noise 0.65 2 2.1 0.1 nm V V mW 6 7 Pavg = 2mW, Extinction Ratio = 5dB 10GHz BW, IF=6mA IF = 6mA, TA=25ºC TR TF RIN 40 40 -130 63 75 3 ps dB/Hz Series Resistance TA=-40ºC TA=85ºC Ohms Series Resistance Temperature Coefficient Capacitance Beam Divergence Beam Divergence current variation Junction Thermal Impedance Die Thermal Impedance IF = 6mA, TA=0 to 70ºC IF=6mA, F=1MHz ΔRS/ΔT C -3000 0.25 15 0.6 1000 100 30 10% 10% 10% ppm/ºC pF Degrees Degrees /mA ºC/W ºC/W 8 Θ ΔΘ/ΔIF ΘJ ΘP 9 Uniformity is the difference between the maximum and the minimum measured value across the array. Maximum and Minimum are defined per array. V850-2106-001, V850-TBD-001 10GBPS 850NM VCSEL ARRAY NOTES 1. Reliability is a function of temperature, see www.finisar.com/aoc.php for details. For the purpose of these tests, IF is DC current. Threshold current varies as (TA – T0)2. It may either increase or decrease with temperature, depending upon relationship of TA to T0. The magnitude of the change is proportional to the threshold at T0. Slope efficiency is defined as ΔPO/ΔIF. To compute the value of Slope Efficiency at a temperature T, use the following equation: η(T) ≈ η(25oC)*[1+(Δη/ΔT)*(T-25)] 6. Rollover is the power at which a further current increase does not result in a power increase. 8. 7. Rise and fall times specifications are the 20% - 80%. Most of the devices will measure