1N60P

FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Repetitive peak reverse voltage Peak forward surge current Forward continuous current Storage temperature range tp≦1 s Ta=25℃ Test Conditions Type 1N60 1N60P 1N60 1N60P 1N60 1N60P Symbol VRRM VRRM IFSM IFSM IF IF Tstg Value 40 45 150 500 30 50 -65~+125 Unit V V mA mA mA mA ℃ Maximum Thermal Resistance Tj=25℃ Parameter Junction ambient Test Conditions on PC board 50mm×50mm×1.6mm Symbol RthJA Value 250 Unit K/W Formosa MicroSemi CO., LTD. www.formosams.com Rev. 2, 22-Nov-2002 1/2 FMS 1N60/1N60P Electrical Characteristics Tj=25℃ Parameter Forward voltage Test Conditions IF=1mA IF=30mA IF=200mA Reverse current Junction capacitance Reverse recovery time VR=15V VR=1V, f=1MHz VR=10V, f=1MHz IF=IR=1mA Irr=1mA RC=100Ω Type 1N60 1N60P 1N60 1N60P 1N60 1N60P 1N60 1N60P Symbol VF VF VF VF IR IR CJ CJ trr Min Typ 0.32 0.24 0.65 0.65 0.1 0.5 2.0 6.0 1.0 Max 0.5 0.5 1.0 1.0 0.5 1.0 Unit V V V V μA μA pF pF ns Dimensions in mm Standard Glass Case JEDEC DO 35 Formosa MicroSemi CO., LTD. www.formosams.com Rev. 2, 22-Nov-2002 2/2