2N7002E

2N7002E N-Channel SMD MOSFET ESD Protection Product Summary V(BR)DSS RDS(on)MAX ID 2.5Ω@10V 60V 0.34A 3.0Ω@4.5V Feature Application ESD protection 2.0KV(Human body mode) Specially designed for battery operated system, Advanced trench process technology solid-state relays drivers,relays,displays,lamps, High density cell design for ultra low on-resistance solenoids,memories,etc. Very low leakage current in off condition In compliance with EU RoHS 2002/95/EC directives. Circuit diagram Package SOT-23 Marking 7002E 72K. Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150002 2003/03/08 2018/05/16 E 5 2N7002E N-Channel SMD MOSFET ESD Protection Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 0.34 A Pulsed Drain Current IDM 1.5 A Power Dissipation PD 0.35 W RθJA 357 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Thermal Resistance from Junction to Ambient ℃/W ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10µA Zero gate voltage drain current IDSS VDS =60V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage Drain-source on-resistance 1) RDS(on) 60 V 1.0 1 µA ±10 µA 2.5 V VGS =10V, ID =0.3A 2.5 VGS =4.5V, ID =0.2A 3.0 Ω 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Turn-on delay time td(on) Turn-off delay time td(off) 18 VDS =30V,VGS =0V,f =1MHz 12 pF 7 VDS =30V,VGS =10V,ID =0.3A 1.7 2.4 5 VDD=30V,VGS=10V, ID=0.3A RGEN=6Ω nC nS 17 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS VGS =0V, IS=0.3A 0.34 A 1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150002 2003/03/08 2018/05/16 E 5 2N7002E N-Channel SMD MOSFET ESD Protection Typical Characteristics Page 3 Document ID Issued Date Revised Date Revision Page. AS-3150002 2003/03/08 2018/05/16 E 5 2N7002E N-Channel SMD MOSFET ESD Protection Typical Characteristics Page 4 Document ID Issued Date Revised Date Revision Page. AS-3150002 2003/03/08 2018/05/16 E 5 2N7002E N-Channel SMD MOSFET ESD Protection SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP. 1.800 L L1 2.000 0.071 0.550 REF. 0.300 0.100 0. 0.037 TYP. 0.079 0. 0.022 REF. 0.500 Page 5 0.012 0.020 Document ID Issued Date Revised Date Revision Page. AS-3150002 002 2003/03/08 2018/05/16 E 5