2N7002K

Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 High reliability test capabilities........................................................... 9 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date DS-251105 2008/02/10 2012/10/24 Revision G Page. 9 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K 60V N-Channel Enhancement Mode MOSFET- ESD Protection Features Package outline • R DS(ON), V GS@10V, I D@500mA=3.0 Ω • R DS(ON), V GS@4.5V, I D@200mA=4.0 Ω • ESD protection 2ΚV (Human body mode) • Advanced trench process technology. • High density cell design for ultra low on-resistance. • Very low leakage current in off condition • Specially designed for battery operated system, (B) 0.012 (0.30) 0.020 (0.50) 0.034 (0.85) 0.045 (1.15) .084(2.10) .068(1.70) 0.110 (2.80) solid-state relays drivers, relays, displays, lamps, solenoids, memories, etc. In compliance with EU RoHS 2002/95/EC directives. Suffix "-H" indicates Halogen-free part, ex. 2N7002K-H. 0.120 (3.04) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) Mechanical data 0.007 (0.18) 0.083 (2.10) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.051 (1.30) 0.003 (0.09) • • SOT-23 0.035 (0.89) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram M aximum ratings (AT T A Dimensions in inches and (millimeters) =25 oC unless otherwise noted) PARAMETER Symbol Ratings UNIT Drain-Source voltage V DS 60 V Gate-source voltage V GS ±20 V Continuous drain current ID 300 mA I DM 2000 mA Pulsed drain current 1) PARAMETER Symbol P D@T A= 25°C Total power dissipation MIN. TYP. Thermal resistance(PCB mounted) 2) W 0.21 T J , T STG Junction to ambient UNIT 0.35 PD P D@ T A=75°C Operation junction and storage temperature range MAX. o 357 R θJA o +150 -55 C C/W Note : 1. Maximum DC current limited by package 2. Surface mounted on FR4 board, t < 5 sec http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date Revised Date DS-251105 2008/02/10 2012/10/24 Revision G Page. 9 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K Electrical characteristics (AT T =25 C unless otherwise noted) o A STATIC PARAMETER CONDITIONS Drain-source Breakdown Voltage Gate Threshold Voltage Symbol MIN. V GS = 0V, I D = 10µA BV DSS 60 V DS = V GS , I D = 250µA V GS(th) 1.0 TYP. MAX. UNIT V 2.5 V GS = 10V, I D = 500mA V 3.0 Drain-Source On-State Resistance Ω R DS(on) V GS = 4.5V, I D = 200mA 4.0 V DS = 60V, V GS = 0V I DSS 1 µA Gate-Body leakage Current V GS = ±20V, V DS = 0V I GSS ±10 µA Forward TransConductance V DS = 15V, I D = 250mA g fS V DS = 15V, I D = 200mA V GS = 4.5V Qg 0.8 t on 20 t off 40 Zero Gate Voltage Drai n Current ms 100 DYNAMIC Total Gate Charge Turn-On Delay Time V DD = 30V, R L = 150Ω, I D = 200mA, V gen = 10V, R G = 10Ω Turn-Off Delay Time ns Input Capacitance V DS = 25V, V GS = 0V f = 1.0 MHz Output Capacitance nC Reverse Transfer Capacitance C iss 35 C oss 10 C rss 5 pF Source-Drain Diode Diode Forward Voltage V SD I S=200mA, V GS=0V Switching Test Circuit 0.82 Gate Charge Test Circuit V DD V DD RL V IN V GS V 1.3 RL V OUT D V GS D 1mA RG V GS DUT DUT G G RG S http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 S Page 3 Document ID Issued Date Revised Date DS-251105 2008/02/10 2012/10/24 Revision G Page. 9 Rating and characteristic curves (2N7002K) Fig.2 Transfer Characteristic V GS = 6.0~10V I D - Drain Source Current (A) I D - Drain-to-Source Current (A) Fig.1 Output Characteristic 5.0V 4.0V 3.0V V DS = 10V V GS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Fig.4 On Resistance vs Gate to Source Voltage Fig.3 On Resistance vs Drain Current R DS(ON) - On-Resistance(Ω) R DS(ON) - On-Resistance(Ω) 5 4 3 V GS = 4.5V 2 1 V GS = 10V 5 4 3 I D = 500mA 2 I D = 200mA 1 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 2 3 4 5 6 7 8 9 10 V GS - Gate-to-Source Voltage (V) I D - Drain Current (A) RDS(ON) - On-Resistance(Normalized) Fig.5 On Resistance vs Junction Temperature V GS = 10V I D = 500mA T J - Junction Temperature (°C) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date DS-251105 2008/02/10 2012/10/24 Revision G Page. 9 Rating and characteristic curves (2N7002K) Fig.7 Gate Charge V GS - Gate-to-Source Voltage (V) Fig. 6 Gate Charge Waveform Vgs Qg Qsw Vgs(th) 10 V DS = 10V 8 I D = 250mA 6 4 2 0 0 Qg(th) Qgs 0.4 0.6 0.8 1.0 Qg - Gate Charge (nC) Qg Qgd Fig.9 Breakdown Voltage vs Junction Temperature Fig.8 Threshold Voltage vs Temperature V th - G-S Threshold Voltage (NORMALIZED) 0.2 BV DSS -Breakdown Voltage (V) 90 I D = 250uA I D = 250uA 88 86 84 82 80 78 76 74 72 -50 T J - Junction Temperature (°C) -25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) Fig.10 Source-Drain Diode Forward Voltage 10 I S - Source Current (A) V GS = 0V o 25 C 1 o 125 C o -55 C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V SD - Source-to-Drain Voltage (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date DS-251105 2008/02/10 2012/10/24 Revision G Page. 9 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K Pinning information Pin Simplified outline Symbol D PinD PinG PinS Drain Drain Gate Source Gate G Source S Marking Type number Marking code RK M K72 2N7002K M 02KYM (Note 1) (Note 2) (Note 2) Note:1.YM indicate Date ode, indicate Halogen-Free. Y= year code, 8=2008, 9=2009 M= week code, A~Z = 1st ~ 26th week a ~z= 27th ~ 52nd week . =53rd week 2.M = Month code Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date DS-251105 2008/02/10 2012/10/24 Revision G Page. 9 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date DS-251105 2008/02/10 2012/10/24 Revision G Page. 9 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 15,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o