AS2310

AS231 0 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS FEATURE  High power and current handing capability  Lead free product is acquired  Surface mount package SOT-23 1. GATE APPLICATION  Battery Switch  DC/DC Converter 2. SOURCE 3. DRAIN MARKING: S1 0 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 3 A Pulsed Drain Current (note 1) IDM 10 A Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 2) http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150040 2003/03/08 2012/05/16 D 4 AS231 0 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =60V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS(on) 60 V 1 µA ±100 nA 2 V VGS =10V, ID =3A 105 mΩ VGS =4.5V, ID =3A 125 mΩ Forward tranconductance (note 3) gFS VDS =15V, ID =2A Diode forward voltage (note 3) VSD IS=3A, VGS = 0V 0.5 S 1.4 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 247 pF 34 pF 19.5 pF 6 ns VGS=10V,VDD=30V, 15 ns ID=1.5A,RGEN=1Ω 15 ns tf 10 ns Total Gate Charge Qg 6 nC Gate-Source Charge Qgs 1 nC Gate-Drain Charge Qgd 1.3 nC VDS =30V,VGS =0V,f =1MHz SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) VDS =30V,VGS =4.5V,ID =3A Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting. http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150040 2003/03/08 2012/05/16 D 4 AS231 0 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Transfer Characteristics Output Characteristics 15 8 Pulsed VDS=5.0V Pulsed (A) DRAIN CURRENT DRAIN CURRENT VGS=2.5V 5 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS Ta=100℃ 4 2 VGS=2.0V 0 Ta=25℃ 6 ID 10 ID (A) VGS=5V、4V、3.0V 0 5 0 1 (V) 2 3 GATE TO SOURCE VOLTAGE ID 140 RDS(ON) 400 —— 4 VGS (V) VGS Ta=25℃ Ta=25℃ (mΩ) (mΩ) VGS=4.5V 300 RDS(ON) 100 ON-RESISTANCE RDS(ON) ON-RESISTANCE Pulsed Pulsed 120 80 VGS=10V 60 200 ID=3A 100 40 20 0 0.5 2 4 6 DRAIN CURRENT 8 ID 10 0 IS —— VSD 10 2 4 6 8 GATE TO SOURCE VOLTAGE (A) VGS 10 (V) Threshold Voltage 1.2 Ta=25℃ Pulsed (V) VTH 1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) 1.1 0.1 0.01 1.0 ID=250uA 0.9 0.8 0.7 0.6 1E-3 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 1.0 0.5 25 1.2 VSD (V) 50 75 100 JUNCTION TEMPERATURE Page 3 TJ 125 (℃ ) Document ID Issued Date Revised Date Revision Page. AS-3150040 2003/03/08 2012/05/16 D 4 AS231 0 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b c D E E1 e e1 L L1 ș Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0°° 627 6XJJHVWHG3DG/D\RXW  http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 Page 4 Document ID Issued Date Revised Date Revision Page. AS-3150040 2003/03/08 2012/05/16 D 4