AS3415E

SOT-23 Plastic-Encapsulate MOSFETS AS3415E P-Channel MOSFET(ESD) SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 2. SOURCE 3. DRAIN MARKING: A1 5E ■ Maximum ratings (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Symbol 符號 Max 最大值 Unit 單位 Drain-Source Voltage 漏極-源極電壓 BVDSS -20 V Gate- Source Voltage 栅極-源極電壓 VGS +8 V Drain Current (continuous) 漏極電流-連續 ID -4 A Drain Current (pulsed) 漏極電流-脉冲 IDM -17 A 2500 V ESD(HBM) 靜電釋放（人體模型） Total Device Dissipation 總耗散功率 TA=25℃環境溫度爲 25℃ PD 1000 mW Junction 結溫 TJ 150 ℃ Storage Temperature 儲存溫度 Tstg -55to+150 ℃ http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150016 2003/03/08 2012/05/16 D 3 SOT-23 Plastic-Encapsulate MOSFETS AS3415E P-Channel MOSFET(ESD) ■ Maximum ratings (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Symbol 符號 Min 最小值 Typ 典型值 Max 最大值 Unit 單位 Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID = -250uA,VGS=0V) BVDSS -20 — — V Gate Threshold Voltage 栅極開启電壓(ID = -250uA,VGS= VDS) VGS(th) -0.3 — -1 V Diode Forward Voltage Drop 内附二極管正向壓降(IS= -0.75A,VGS=0V) VSD — — -1.5 V Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= -16V) (VGS=0V, VDS= -16V, TA=55℃) IDSS — — -1 -10 uA Gate Body Leakage 栅極漏電流(VGS=+8V, VDS=0V) IGSS — — +10 uA Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -4A,VGS= -4.5V) RDS(ON) — 35 43 mΩ Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -3A,VGS= -2.5V) RDS(ON) — 45 54 mΩ Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -2A,VGS= -1.8V) RDS(ON) — 56 73 mΩ Input Capacitance 輸入電容 (VGS=0V, VDS= -10V,f=1MHz) CISS — 1450 — pF Output Capacitance 輸出電容 (VGS=0V, VDS= -10V,f=1MHz) COSS — 205 — pF Turn-ON Time 开启時間 (VDS= -10V, ID= -2.8A, RGEN=6Ω) t(on) — 9.5 — ns Turn-OFF Time 关断時間 (VDS= -10V, ID= -2.8A, RGEN=6Ω) t(off) — 94 — ns Pulse Width