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AS3423B

AS3423B

  • 厂商:

    FORMOSA(美丽微)

  • 封装:

    SOT23-3

  • 描述:

    类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):3A;功率(Pd):1W;导通电阻(RDS(on)@Vgs,Id):90mΩ@4.5V,3A;

  • 数据手册
  • 价格&库存
AS3423B 数据手册
Formosa MS P-Channel Enhancement Mode MOSFET AS3423B Product Summary V(BR)DSS RDS(on)MAX ID 90mΩ@-4.5V -20V -3A 110mΩ@-2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Circuit diagram Package SOT-23-3L Marking AS23 http://www.formosagr.com TEL:886-755-27188611 FAX:886-755-27188568 Page 1 Document ID Issued Date Revised Date Revision Page. FM-3150321 2003/03/08 2012/05/16 D 3 Formosa MS P-Channel Enhancement Mode MOSFET AS3423B Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID -3 A Pulsed Drain Current IDM -10 A Power Dissipation PD 1 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =-250µA -1.5 V Gate threshold voltage Drain-source on-resistance 1) RDS(on) -20 V -0.5 VGS =-4.5V, ID =-3A 70 90 VGS =-2.5V, ID =-2A 90 110 mΩ 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Turn-on delay time td(on) Turn-off delay time td(off) 500 VDS =-10V,VGS =0V,f =1MHz pF 100 10 VDD=-10V, ID =-3A, RGEN=6Ω nS 60 Source-Drain Diode characteristics Diode Forward voltage VDS VGS =0V, IS=-0.75A -1.5 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. http://www.formosagr.com TEL:886-755-27188611 FAX:886-755-27188568 Page 2 Document ID Issued Date Revised Date Revision Page. FM-3150321 2003/03/08 2012/05/16 D 3 Formosa MS P-Channel Enhancement Mode MOSFET AS3423B SOT-23-3L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.500 1.700 0.059 0.067 E1 2.250 2.550 0.089 e e1 0.950 TYP. 1.800 L L1 http://www.formosagr.com TEL:886-755-27188611 FAX:886-755-27188568 2.000 0.071 0.550 REF. 0.300 0.100 0. 0.037 TYP. 0.079 0. 0.022 REF. 0.500 Page 3 0.012 0.020 Document ID Issued Date Revised Date Revision Page. FM-3150321 2003/03/08 2012/05/16 D 3
AS3423B 价格&库存

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