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BZT52C11S

BZT52C11S

  • 厂商:

    FORMOSA(美丽微)

  • 封装:

    SOD-323F

  • 描述:

    二极管配置:独立式;稳压值(标称值):11V;稳压值(范围):10.4V~11.6V;精度:-;功率:200mW;反向电流(Ir):100nA@8V;阻抗(Zzt):20Ω;

  • 详情介绍
  • 数据手册
  • 价格&库存
BZT52C11S 数据手册
Formosa MS SMD Zener Diode BZT52S Series List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Electrical characteristics................................................................... 3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 High reliability test capabilities........................................................... 9 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date Revision Page. DS-221734 2008/08/10 2014/06/13 E 9 Formosa MS SMD Zener Diode BZT52S Series 200mW Surface Mount Zener Diodes - 2.0V-75V Package outline Features • Silicon epitaxial planar chip structure. • Wide zener reverse voltage range 2.0V to 75V. • Small package size for high density applications. • Ideally suited for automated assembly processes. • Pb-free package is available • We declare that the material of product compliance 0.016(0.40) 0.010(0.25) 0.053(1.35) 0.045(1.15) SOD-323F 0.071(1.80) 0.063(1.60) with RoHS requirements. • Suffix "-H" indicates Halogen-free part, ex.BZT52C2V0S-H. 0.003(0.08) 0.016(0.40) 0.039(1.00) 0.031(0.80) Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOD-323F • Terminals : Solder plated, solderable per 0.106(2.70) 0.091(2.30) MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.005 gram Dimensions in inches and (millimeters) Maximum ratings (at T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol Forward voltage I F = 10 mA Power dissipation T A=25 ° C ( note 1) PD Thermal resistance Junction to ambient (note 1) Junction to case (note 1) R θJA R θJC MIN. TYP. VF Operating junction temperature range Storage temperature range MAX. UNIT 0.9 V 200 mW o 625 350 o C/W C/W TJ -55 +150 o C T STG -55 +150 o C Note 1: Mounted on FR-4 minimum pad http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date Revised Date Revision Page. DS-221734 2008/08/10 2014/06/13 E 9 Formosa MS SMD Zener Diode BZT52S Series Electrical characteristics (at T =25 C unless otherwise noted) o A Part No. Test current V Z @ I ZT I ZT Z ZT @ I ZT Z ZK @ I ZK I ZK IR VR mV/k mV/k @V R =0V f=1MHz Min.(V) Nom.(V) Max.(V) mA (Ω)Max (Ω)Max mA (uA)Max Volts Min. Max. (pF)Typ. Marking code Zener Impedance θV z Zener voltage Leakage current CJ @lzt BZT52C2V0S WY 1.91 2.0 2.09 5 100 600 1.0 150.0 1.0 -3.5 0 450 BZT52C2V4S 00 2.2 2.4 2.6 5 100 1000 0.5 50.0 1.0 -3.5 0 450 BZT52C2V7S 01 2.5 2.7 2.9 5 100 1000 0.5 20.0 1.0 -3.5 0 450 BZT52C3V0S 02 2.8 3.0 3.2 5 100 1000 0.5 10.0 1.0 -3.5 0 450 BZT52C3V3S 05 3.1 3.3 3.5 5 95 1000 0.5 5.0 1.0 -3.5 0 450 BZT52C3V6S 06 3.4 3.6 3.8 5 90 1000 0.5 5.0 1.0 -3.5 0 450 BZT52C3V9S 07 3.7 3.9 4.1 5 90 1000 0.5 3.0 1.0 -3.5 -2.5 450 BZT52C4V3S 08 4.0 4.3 4.6 5 90 1000 0.5 3.0 1.0 -3.5 0 450 BZT52C4V7S 09 4.4 4.7 5.0 5 80 800 0.5 3.0 2.0 -3.5 0.2 260 BZT52C5V1S 0A 4.8 5.1 5.4 5 60 800 0.5 2.0 2.0 -2.7 1.2 225 BZT52C5V6S 0C 5.2 5.6 6.0 5 40 700 0.5 1.0 2.0 -2.0 2.5 200 BZT52C6V2S 0E 5.8 6.2 6.6 5 10 100 0.5 3.0 4.0 0.4 3.7 185 BZT52C6V8S 0F 6.4 6.8 7.2 5 15 160 0.5 2.0 4.0 1.2 4.5 155 BZT52C7V5S 0G 7.0 7.5 7.9 5 15 160 0.5 1.0 5.0 2.5 5.3 140 BZT52C8V2S 0H 7.7 8.2 8.7 5 15 160 0.5 0.7 5.0 3.2 6.2 135 BZT52C9V1S 0K 8.5 9.1 9.6 5 15 160 0.5 0.2 7.0 3.8 7.0 130 BZT52C10S 0L 9.4 10 10.6 5 20 160 0.5 0.1 8.0 4.5 8.0 130 BZT52C11S 0M 10.4 11 11.6 5 20 160 0.5 0.1 8.0 5.4 9.0 130 BZT52C12S 0N 11.4 12 12.7 5 25 80 0.5 0.1 8.0 6.0 10 130 BZT52C13S 0P 12.4 13 14.1 5 30 80 0.5 0.1 8.0 7.0 11 120 BZT52C15S 0T 14.3 15 15.8 5 30 400 0.5 0.05 10.5 9.2 13 110 BZT52C16S 0U 15.3 16 17.1 5 40 400 0.5 0.05 11.2 10.4 14 105 BZT52C18S 0W 16.8 18 19.1 5 45 400 0.5 0.05 12.6 12.4 16 100 BZT52C20S 0Z 18.8 20 21.2 5 55 500 0.5 0.05 14.0 14.4 18 85 BZT52C22S 10 20.8 22 23.3 5 55 500 0.5 0.05 15.4 16.4 20 85 BZT52C24S 11 22.8 24 25.6 5 70 120 0.5 0.05 16.8 18.4 22 80 BZT52C27S 12 25.1 27 28.9 2 80 300 0.5 0.05 18.9 21.4 25.3 70 BZT52C30S 14 28 30 32 2 80 300 0.5 0.05 21.0 24.4 29.4 70 BZT52C33S 18 31 33 35 2 80 300 0.5 0.05 23.2 27.4 33.4 70 BZT52C36S 19 34 36 38 2 90 500 0.5 0.05 25.2 30.4 37.4 70 BZT52C39S 20 37 39 41 2 130 500 0.5 0.05 27.3 33.4 41.2 45 BZT52C43S 21 40 43 46 2 150 500 0.5 0.05 30.1 37.6 46.6 40 BZT52C47S 1A 44 47 50 2 170 500 0.5 0.05 32.9 42.0 51.8 40 BZT52C51S 1C 48 51 54 2 180 500 0.5 0.05 35.7 46.6 57.2 40 BZT52C56S 1D 52 56 60 2 200 500 0.5 0.05 39.2 52.2 63.8 40 BZT52C62S 1E 58 62 66 2 215 500 0.5 0.05 43.4 58.8 71.6 35 BZT52C68S 1F 64 68 72 2 240 500 0.5 0.05 47.6 65.6 79.8 35 BZT52C75S 1G 70 75 79 2 255 500 0.5 0.05 52.5 73.4 88.6 35 Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date Revision Page. DS-221734 2008/08/10 2014/06/13 E 9 Rating and characteristic curves (BZT52S Series) FIG.1-EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE FIG. 2-TYPICAL FORWARD VOLTAGE 1000 T J = 25 OC I Z(AC) = 0.1 I Z(DC) f = 1kHz I F, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE( Ω ) 1000 100 I Z = 1mA 5mA 10 1.0 100 O 150 C 10 O O 25 C 0 C 1.0 3.0 10 80 0.4 0.5 V Z, NOMINAL ZENER VOLTAGE (V) 0.7 0.6 0.8 0.9 1.0 1.1 1.2 V F, FORWARD VOLTAGE (V) FIG. 3-TYPICAL CAPACITANCE FIG. 4-TYPICAL LEAKAGE CURRENT 1000 1000 0V BIAS I R, LEAKAGE CURRENT (uA) T A = 25 OC C J , CAPACITANCE(pF) O 75 C 1V BIAS 100 BIAS AT 50% OF VZ NOM 10 100 10 1.0 O +150 C 0.1 0.01 O +25 C 0.001 0.0001 1.0 O -55 C 0.00001 4.0 10 70 0 V Z, NOMINAL ZENER VOLTAGE (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 10 20 30 40 50 60 70 V Z, NOMINAL ZENER VOLTAGE (V) Page 4 Document ID Issued Date Revised Date Revision Page. DS-221734 2008/08/10 2014/06/13 E 9 Rating and characteristic curves (BZT52S Series) FIG. 5-ZENER VOLTAGE VERSUS ZENER CURRENT (V Z UP TO 12V) FIG. 6-ZENER VOLTAGE VERSUS ZENER CURRENT(12V TO 75V) 100 100 I Z, ZENER CURRENT (mA) T A = 25 OC 10 1 0.1 0.01 10 1 0.1 0.01 0 2 4 6 8 10 12 10 V Z, ZENER VOLTAGE (V) 30 50 70 90 V Z, ZENER VOLTAGE (V) FIG. 7-STEADY STATE POWER DERATING 100 POWER DISSIPATION (%) I Z, ZENER CURRENT (mA) T A = 25 OC 80 60 40 20 0 0 25 50 75 100 125 150 O AMBIENT TEMPERATURE ( C) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date Revision Page. DS-221734 2008/08/10 2014/06/13 E 9 Formosa MS SMD Zener Diode BZT52S Series Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE A B C SOD-323F 0.033 (0.83) 0.025 (0.63) 0.063 (1.60) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date Revision Page. DS-221734 2008/08/10 2014/06/13 E 9 Formosa MS SMD Zener Diode BZT52S Series Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOD-323F Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 1.46 2.95 1.25 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date Revision Page. DS-221734 2008/08/10 2014/06/13 E 9 Formosa MS SMD Zener Diode BZT52S Series Reel packing PACKAGE REEL SIZE SOD-323F 7" COMPONENT SPACING (m/m) REEL (pcs) 4.0 3,000 BOX (pcs) 30,000 INNER BOX (m/m) 183*123*183 REEL DIA, (m/m) 178 CARTON SIZE (m/m) CARTON (pcs) 382*257*387 240,000 APPROX. GROSS WEIGHT (kg) 8.0 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o
BZT52C11S
物料型号为:SN74LS241 器件简介:SN74LS241 是一款 8 位三态输出通用寄存器。

引脚分配:1-O1, 2-O2, 3-O3, 4-O4, 5-O5, 6-O6, 7-O7, 8-O8, 9-G1, 10-G2A0, 11-D1, 12-D2, 13-D3, 14-D4, 15-D5, 16-D6, 17-D7, 18-D8。

参数特性:工作电压范围 4.5V 至 5.5V,功耗 200mW,工作温度范围 -40°C 至 +85°C。

功能详解:SN74LS241 能够存储并同步或异步地更新数据。

应用信息:常用于数据存储和传输。

封装信息:DIP-18。
BZT52C11S 价格&库存

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