MMBT4403

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT4403 TRANSISTOR (PNP) FEATURES Switching transistor SOT-23 MARKING ：2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-35 V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC= -150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V VCE= -10V, IC= -20mA Transition frequency fT Detay time td VCC=-30V,VEB=-2V, 15 ns Rise time tr IC=-150mA.IB1=-15mA 20 ns Storage time ts VCC=-30V, IC=-150mA. 225 ns Fall time tf IB1= IB2=-15mA 30 ns http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 200 f = 100MHz MHz Document ID Issued Date Revised Date DS-231172 2011/03/10 2011/07/21 Revision Page. B 3 SOT-23 Plastic-Encapsulate Transistors MMBT4403 Static Characteristic -200 COMMON EMITTER Ta=25℃ -1mA DC CURRENT GAIN IC —— IC COMMON EMITTER VCE=-2V Ta=100℃ -0.9mA -0.8mA -0.7mA -150 hFE 1000 hFE (mA) -250 COLLECTOR CURRENT Formosa MS Typical Characterisitics -0.6mA -0.5mA -100 -0.4mA -0.3mA -50 Ta=25℃ 100 -0.2mA IB=-0.1mA 10 -0 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat -700 —— VCE -1 (V) IC BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) IC (mA) IC —— β=10 -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 -0.0 -3 -1 -600 -100 VBEsat -1.2 β=10 -10 -10 COLLECTOR CURRENT -10 -100 -30 COLLECTOR CURRENT IC -600 IC -600 -1 -3 (mA) -10 -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 50 —— IC -600 (mA) VCB/ VEB f=1MHz IE=0/IC=0 (pF) C Ta=100℃ -10 Ta=25℃ -1 -0.1 -0.0 -0.4 Cob 10 CAPACITANCE COLLECTOR CURRENT Ta=25℃ Cib -100 IC (mA) COMMON EMITTER VCE=-2V -0.8 1 -0.1 -1.2 -1 fT -600 -10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— IC PC 400 —— V -30 (V) Ta VCE=-10V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ -100 -10 300 200 100 0 -1 -10 -3 COLLECTOR CURRENT http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 IC 0 -30 (mA) 25 50 75 100 AMBIENT TEMPERATURE Page 2 Ta 125 150 (℃ ) Document ID Issued Date Revised Date DS-231172 2011/03/10 2011/07/21 Revision Page. B 3 SOT-23 Plastic-Encapsulate Transistors MMBT4403 Formosa MS Typical Characterisitics SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 6° SOT-23 Suggested Pad Layout http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date DS-231172 2011/03/10 2011/07/21 Revision Page. B 3