SI2301

Formosa MS P-Channel Enhancement Mode MOSFET AS2301 Product Summary V(BR)DSS RDS(on)MAX ID 64mΩ@-4.5V -20V 80mΩ@-2.5V -3.4A 95mΩ@-1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Circuit diagram Package SOT-23 Marking S1. http://www.formosagr.com TEL:886-755-27188611 FAX:886-755-27188568 Page 1 Document ID Issued Date Revised Date Revision Page. FM-31500 031 2003/03/08 2018/05/16 E 3 Formosa MS P-Channel Enhancement Mode MOSFET AS2301 Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID -3.4 A Pulsed Drain Current IDM -14 A Power Dissipation PD 1 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =-250µA -1.0 V Gate threshold voltage 、Drain-source on-resistance 1) RDS(on) -20 V -0.4 VGS =-4.5V, ID =-3.4A 64 VGS =-2.5V, ID =-3.0A 80 VGS =-1.8V, ID =-2.5A 95 mΩ 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 550 VDS =-10V,VGS =0V,f =1MHz 89 65 4.3 VDS =-10V,VGS =-4.5V, ID =-3.4A Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.1 Turn-on delay time td(on) 12 Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time pF 0.8 nC 54 VDD=-10V, VGS =-4.5V,ID=-1A, RGEN=2.5Ω nS 15 tf 9 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS VGS =0V, IS=-3.4A -3.4 A -1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. http://www.formosagr.com TEL:886-755-27188611 FAX:886-755-27188568 Page 2 Document ID Issued Date Revised Date Revision Page. FM-31500 031 2003/03/08 2018/05/16 E 3 Formosa MS P-Channel Enhancement Mode MOSFET AS2301 SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP. 1.800 L L1 http://www.formosagr.com TEL:886-755-27188611 FAX:886-755-27188568 2.000 0.071 0.500 0.012 0.550 REF. 0.300 0.100 0. 0.037 TYP. 0.079 0. 0.022 REF. Page 3 0.020 Document ID Issued Date Revised Date Revision Page. FM-31500 031 2003/03/08 2018/05/16 E 3