SI2302

Formosa MS N-Channel Enhancement Mode MOSFET AS2302 Product Summary V(BR)DSS RDS(on)MAX ID 55mΩ@4.5V 20V 3.0A 80mΩ@2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Circuit diagram Package SOT-23 Marking 2302B. http://www.formosagr.com TEL:886-755-27188611 FAX:886-755-27188568 Page 1 Document ID Issued Date Revised Date Revision Page. FM-31500 032 2003/03/08 2019/03/16 E 3 Formosa MS N-Channel Enhancement Mode MOSFET AS2302 Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 3.0 A Pulsed Drain Current IDM 14 A Power Dissipation PD 0.7 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage Drain-source on-resistance 1) RDS(on) 20 V 0.55 1 µA ±100 nA 1.25 V VGS =4.5V, ID =3A 55 VGS =2.5V, ID =2A 80 mΩ 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 280 VDS =10V,VGS =0V,f =1MHz 46 29 2.9 VDS =10V,VGS =4.5V, ID =4.3A Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.6 Turn-on delay time td(on) 13 Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time pF nC 0.4 54 VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω nS 18 tf 11 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS VGS =0V, IS=3A 3.0 A 1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. http://www.formosagr.com TEL:886-755-27188611 FAX:886-755-27188568 Page 2 Document ID Issued Date Revised Date Revision Page. FM-31500 032 2003/03/08 2019/03/16 E 3 Formosa MS N-Channel Enhancement Mode MOSFET AS2302 SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP. 1.800 L L1 http://www.formosagr.com TEL:886-755-27188611 FAX:886-755-27188568 2.000 0.071 0.550 REF. 0.300 0.100 0. 0.037 TYP. 0.079 0. 0.022 REF. 0.500 Page 3 0.012 0.020 Document ID Issued Date Revised Date Revision Page. FM-31500 032 2003/03/08 2019/03/16 E 3