SI2303

SOT-23 Plastic-Encapsulate MOSFETS SI2303 Formosa MS P-Channel MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 2. SOURCE 3. DRAIN MARKING: S3 ■ Maximum ratings (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Symbol 符號 Max 最大值 Unit 單位 Drain-Source Voltage 漏極-源極電壓 BVDSS -30 V Gate- Source Voltage 栅極-源極電壓 VGS +20 V Drain Current (continuous) 漏極電流-連續 ID -1.9 A Drain Current (pulsed) 漏極電流-脉冲 IDM -10 A Total Device Dissipation 總耗散功率 TA=25℃環境溫度爲 25℃ PD 1000 mW Junction 結溫 TJ 150 ℃ Storage Temperature 儲存溫度 Tstg -55to+150 ℃ http://www.formosagroup.cn TEL:886-755-27188611 FAX:886-755-27188568 Page 1 Document ID Issued Date Revised Date Revision Page. FM-3150033 2003/03/08 2012/05/16 D 3 SOT-23 Plastic-Encapsulate MOSFETS SI2303 Formosa MS P-Channel MOSFET ■ Maximum ratings (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Symbol 符號 Min 最小值 Typ 典型值 Max 最大值 Unit 單位 Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID = -250uA,VGS=0V) BVDSS -30 — — V Gate Threshold Voltage 栅極開启電壓(ID = -250uA,VGS= VDS) VGS(th) -1 — -3 V Diode Forward Voltage Drop 内附二極管正向壓降(IS= -1.5A,VGS=0V) VSD — — -1.2 V Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= -30V) IDSS — — -1 uA Gate Body Leakage 栅極漏電流(VGS=+20V, VDS=0V) IGSS — — +100 nA Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -1.9A,VGS= -10V) RDS(ON) — — 190 mΩ Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -1.4A,VGS= -4.5V) RDS(ON) — — 330 mΩ Input Capacitance 輸入電容 (VGS=0V, VDS= -15V,f=1MHz) CISS — 155 — pF Output Capacitance 輸出電容 (VGS=0V, VDS= -15V,f=1MHz) COSS — 35 — pF Turn-ON Time 开启時間 (VDS= -15V, VGS= -10V, RGEN=10Ω) t(on) — 4 — ns Turn-OFF Time 关断時間 (VDS= -15V, VGS= -10V, RGEN=10Ω) t(off) — 11 — ns Pulse Width