08051J3R9BBT

Freescale Semiconductor Technical Data Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. Document Number: MRFG35005MT1 Rev. 3, 1/2006 MRFG35005MT1 3.5 GHz, 4.5 W, 12 V POWER FET GaAs PHEMT Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 450 mWatt Power Gain — 11 dB Efficiency — 25% • 4.5 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. ARCHIVE INFORMATION CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 10.5 0.07 (2) -5 30 - 65 to +150 175 - 20 to +85 (2) Unit Vdc W W/°C Vdc dBm °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Class AB Symbol RθJC Value 14.2 (2) Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated.  Freescale Semiconductor, Inc., 2006. All rights reserved. MRFG35005MT1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 2.5 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 8.7 mA) Quiescent Gate Voltage (VDS = 12 Vdc, ID = 80 mA) Power Gain (VDD = 12 Vdc, IDQ = 80 mA, f = 3.55 GHz) Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 80 mA, f = 3.55 GHz) Drain Efficiency (VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mW Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 450 mW Avg., IDQ = 80 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Gps P1dB hD Min — — — — - 1.2 - 1.1 10 — 22 Typ 1.7 < 1.0 — < 1.0 - 0.9 - 0.8 11 4.5 25 Max — 100 600 9 - 0.7 - 0.6 — — — Unit Adc µAdc µAdc mAdc Vdc Vdc dB W % ARCHIVE INFORMATION ACPR — - 42 - 39 dBc MRFG35005MT1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION VGS VDD C11 C10 C9 C8 C7 C6 C5 R1 C3 C4 C16 C17 C18 C19 C20 C21 C22 C14 C15 Z5 RF INPUT Z1 Z2 C1 C29 C28 C27 C26 C2 Z3 Z4 C12 Z6 Z7 Z8 Z9 Z10 Z11 C13 Z15 C23 Z16 Z17 C24 C25 Z18 RF OUTPUT Z12 Z13 Z14 ARCHIVE INFORMATION Z1, Z18 Z2 Z3 Z4 Z5, Z15 Z6, Z8, Z10 Z7, Z9 0.125″ 0.435″ 0.298″ 0.336″ 0.527″ 0.050″ 0.125″ x 0.044″ Microstrip x 0.044″ Microstrip x 0.254″ Microstrip x 0.590″ Microstrip x 0.015″ Microstrip x 0.025″ Microstrip x 0.025″ Microstrip Z11 Z12 Z13 Z14 Z16 Z17 PCB 0.400″ x 0.081″ Microstrip 0.120″ x 0.408″ Microstrip 0.259″ x 0.058″ Microstrip 0.269″ x 0.348″ Microstrip 0.149″ x 0.062″ Microstrip 0.553″ x 0.044″ Microstrip Rogers 4350, 20 mil, εr = 3.5 Figure 1. 3.5 GHz Test Circuit Schematic Table 5. 3.5 GHz Test Circuit Component Designations and Values Part C1, C24 C2 C3, C4, C14, C15 C5, C16 C6, C17 C7, C18 C8, C19 C9, C20 C10, C21 C11, C22 C12, C28 C13, C26, C27 C23 C25 C29 R1 Description 7.5 pF Chip Capacitors 0.4 pF Chip Capacitor (0805) 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 3.9 µF Chip Capacitors 0.1 µF Chip Capacitors 22 µF, 35 V Tantalum Surface Mount Capacitors 0.1 pF Chip Capacitors (0805) 0.3 pF Chip Capacitors (0805) 1.0 pF Chip Capacitor (0805) 1.2 pF Chip Capacitor (0805) 0.9 pF Chip Capacitor (0805) 100 W Chip Resistor 08051J0R1BBT 08051J0R3BBT 08051J1R0BBT 08051J1R2BBT 08051J0R9BBT Part Number 100A7R5JP150X 08051J0R4BBT 08051J3R9BBT 100A100JP500X 100A101JP500X 100B101JP500X 100B102JP500X Manufacturer ATC AVX AVX ATC ATC ATC ATC ATC ATC Newark AVX AVX AVX AVX AVX Newark MRFG35005MT1 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION C7 C18 C6 C11 C10 C9 C8 R1 C3 C4 C14 C15 C5 C17 C16 C19 C20 C21 C22 C12 C13 C23 ARCHIVE INFORMATION C1 C25 C29 C28 C27 C26 C24 MRFG35005M Rev 1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35005MT1 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION C2 TYPICAL CHARACTERISTICS −10 IRL, INPUT RETURN LOSS (dB) IRL −20 VDS = 12 Vdc, IDQ = 85 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.868é−115.15 _, ΓL = 0.764é−139.11_ −20 ACPR (dBc) −10 −30 −40 −30 −40 −50 −60 0.01 ACPR −50 −60 ARCHIVE INFORMATION Pout, OUTPUT POWER (WATTS) Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power 20 17.5 G T , TRANSDUCER GAIN (dB) 15 VDS = 12 Vdc, IDQ = 85 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.868é−115.18 _, ΓL = 0.764é−139.11_ PAE 40 35 30 GT 25 20 15 10 5 0 0.01 0.1 Pout, OUTPUT POWER (WATTS) 1 PAE, POWER ADDED EFFICIENCY (%) 12.5 10 7.5 5 2.5 0 Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MRFG35005MT1 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION 0.1 1 Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 85 mA f GHz 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 S11 |S11| 0.903 0.903 0.901 0.901 0.902 0.900 0.901 0.901 0.899 0.899 0.901 0.900 0.899 0.900 0.899 0.898 0.901 0.897 0.903 0.901 0.900 0.900 0.899 0.902 0.903 0.902 0.903 0.904 0.904 0.903 0.906 0.905 0.904 0.906 0.906 0.905 0.906 0.906 0.904 0.903 0.902 0.901 0.899 0.899 0.898 0.894 0.895 ∠φ - 171.71 - 173.53 - 175.37 - 177.11 - 178.58 179.95 178.58 177.36 176.17 174.93 173.84 172.74 171.57 170.42 169.31 168.10 166.96 165.99 164.48 163.52 160.23 159.17 158.30 157.39 156.46 155.63 154.92 154.09 153.38 152.74 152.00 151.41 150.85 150.13 149.60 149.11 148.41 147.74 147.11 146.23 145.41 144.66 143.78 142.76 141.87 140.80 139.70 |S21| 7.441 6.807 6.268 5.817 5.441 5.096 4.804 4.516 4.293 4.089 3.900 3.730 3.567 3.423 3.284 3.154 3.040 2.928 2.821 2.720 2.618 2.537 2.456 2.386 2.317 2.251 2.195 2.137 2.080 2.030 1.984 1.937 1.897 1.860 1.822 1.788 1.761 1.729 1.701 1.677 1.651 1.632 1.612 1.591 1.571 1.554 1.539 S21 ∠φ 83.44 81.55 79.64 77.76 75.93 74.17 72.37 70.46 68.89 67.19 65.58 63.88 62.18 60.54 58.91 57.19 55.59 54.05 52.41 50.95 49.25 47.79 46.40 44.91 43.49 41.97 40.59 39.12 37.80 36.43 34.98 33.71 32.47 31.10 29.77 28.49 27.10 25.78 24.47 22.98 21.58 20.17 18.88 17.38 15.88 14.50 12.83 |S12| 0.029 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.032 0.032 0.032 0.033 0.033 S12 ∠φ 4.18 3.31 2.49 1.53 0.64 - 0.21 - 0.90 - 1.80 - 2.30 - 3.17 - 4.01 - 4.63 - 5.38 - 6.01 - 6.66 - 7.52 - 8.14 - 8.73 - 9.30 - 9.89 - 10.77 - 11.27 - 11.82 - 12.27 - 12.67 - 13.06 - 13.50 - 13.91 - 14.35 - 14.79 - 15.36 - 15.79 - 16.26 - 16.74 - 17.43 - 17.97 - 18.45 - 18.73 - 19.16 - 19.61 - 20.07 - 20.42 - 20.71 - 21.29 - 21.77 - 22.47 - 23.36 |S22| 0.604 0.603 0.602 0.602 0.602 0.600 0.600 0.600 0.599 0.600 0.600 0.600 0.600 0.601 0.601 0.602 0.602 0.600 0.606 0.606 0.607 0.609 0.609 0.609 0.610 0.613 0.612 0.613 0.615 0.615 0.615 0.618 0.619 0.617 0.619 0.620 0.619 0.620 0.620 0.620 0.619 0.621 0.619 0.618 0.619 0.618 0.616 S22 ∠φ - 171.44 - 172.51 - 173.76 - 175.04 - 176.15 - 177.32 - 178.45 - 179.44 179.38 178.20 176.10 175.06 174.08 173.04 171.90 171.14 170.54 169.31 168.98 170.81 170.02 169.38 168.87 168.03 167.41 166.88 165.94 165.27 164.72 163.90 163.26 162.83 162.02 161.22 160.82 160.12 159.20 158.79 158.15 157.20 156.64 156.02 155.10 154.49 154.05 153.08 177.19 ARCHIVE INFORMATION MRFG35005MT1 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 85 mA (continued) f GHz 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 S11 |S11| 0.895 0.893 0.893 0.894 0.892 0.890 0.892 0.891 0.888 0.890 0.889 0.887 0.889 0.888 0.887 0.888 0.887 0.887 0.887 0.888 0.888 0.887 0.888 0.887 0.886 0.887 0.886 0.884 0.885 0.885 0.884 0.883 0.882 0.881 0.880 0.879 0.878 0.877 0.876 0.874 0.874 0.870 0.867 0.866 ∠φ 138.63 137.48 136.05 134.72 133.46 131.81 130.31 128.98 127.31 125.83 124.49 122.78 121.40 119.96 118.32 116.96 115.68 114.24 113.05 111.84 110.59 109.45 108.32 107.24 106.10 105.02 104.22 103.08 102.00 101.08 100.08 98.90 97.99 96.91 95.41 94.29 92.80 91.10 89.66 87.90 86.08 84.39 82.48 80.32 |S21| 1.522 1.507 1.493 1.478 1.465 1.453 1.436 1.421 1.409 1.394 1.380 1.367 1.352 1.338 1.328 1.313 1.299 1.287 1.274 1.262 1.252 1.240 1.230 1.222 1.216 1.205 1.198 1.195 1.189 1.184 1.183 1.176 1.172 1.176 1.172 1.172 1.177 1.175 1.176 1.178 1.177 1.175 1.177 1.179 S21 ∠φ 11.37 9.90 8.24 6.55 4.95 3.30 1.60 0.04 - 1.72 - 3.40 - 4.89 - 6.59 - 8.31 - 9.91 - 11.56 - 13.16 - 14.69 - 16.36 - 17.90 - 19.43 - 20.85 - 22.36 - 24.01 - 25.35 - 26.93 - 28.43 - 29.78 - 31.44 - 33.00 - 34.46 - 35.96 - 37.67 - 39.19 - 40.74 - 42.48 - 44.02 - 45.83 - 47.87 - 49.70 - 51.58 - 53.56 - 55.56 - 57.53 - 59.75 |S12| 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.035 0.035 0.035 0.036 0.036 0.036 0.036 0.036 0.036 0.036 0.036 0.037 0.037 0.037 0.038 0.038 0.038 0.039 0.039 0.039 0.040 0.040 0.040 0.041 0.042 0.042 0.042 0.042 0.042 0.043 0.043 S12 ∠φ - 24.77 - 26.15 - 27.11 - 27.92 - 28.51 - 29.31 - 29.98 - 30.69 - 31.47 - 32.45 - 33.06 - 33.59 - 34.06 - 34.46 - 35.34 - 36.09 - 36.68 - 37.71 - 38.84 - 39.90 - 40.73 - 41.33 - 41.73 - 42.00 - 42.60 - 43.13 - 43.70 - 44.59 - 45.54 - 46.22 - 46.93 - 48.09 - 49.06 - 49.87 - 50.58 - 51.24 - 52.21 - 53.61 - 55.11 - 56.51 - 57.66 - 58.60 - 59.41 - 60.39 |S22| 0.618 0.618 0.616 0.618 0.617 0.616 0.616 0.617 0.615 0.616 0.616 0.615 0.615 0.616 0.615 0.613 0.613 0.612 0.612 0.613 0.613 0.612 0.613 0.612 0.611 0.611 0.609 0.607 0.608 0.608 0.605 0.606 0.607 0.604 0.603 0.601 0.597 0.594 0.594 0.590 0.589 0.588 0.585 0.583 S22 ∠φ 152.46 151.97 150.93 150.06 149.53 148.45 147.51 146.90 145.95 145.01 143.59 142.69 141.92 141.09 140.03 139.19 138.40 137.36 136.45 135.74 134.56 133.64 133.05 131.91 130.81 130.15 128.89 127.57 126.81 125.63 124.16 123.26 122.03 120.40 119.45 118.22 116.51 115.24 113.89 112.15 110.76 109.40 107.71 144.44 ARCHIVE INFORMATION MRFG35005MT1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION NOTES ARCHIVE INFORMATION MRFG35005MT1 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION NOTES ARCHIVE INFORMATION MRFG35005MT1 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION NOTES ARCHIVE INFORMATION MRFG35005MT1 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION PACKAGE DIMENSIONS A F 3 0.146 3.71 0.095 2.41 0.115 2.92 B D 1 2 R L 0.115 2.92 0.020 0.51 4 N K Q ZONE V 0.35 (0.89) X 45_" 5 _ 10_DRAFT inches mm SOLDER FOOTPRINT DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 U H 4 P C Y Y E ZONE W G RF Device Data Freescale Semiconductor ÉÉÉÉÉÉ É ÉÉÉÉ É ÉÉÉÉÉÉ É ÉÉÉÉÉÉ ÉÉÉ ÉÉÉÉÉÉ É 1 3 ZONE X 2 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE S VIEW Y - Y CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC MRFG35005MT1 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRFG35005MT1 1Rev. 3, 1/2006 2 Document Number: MRFG35005MT1 RF Device Data Freescale Semiconductor