1812SMS-39N

Freescale Semiconductor Technical Data Document Number: MRF5S4140H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28-volt base station equipment. • Typical Single- Carrier N - CDMA Performance @ 465 MHz: VDD = 28 Volts, IDQ = 1250 mA, Pout = 28 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S4140HR3 MRF5S4140HSR3 465 MHz, 28 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S4140HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S4140HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 427 2.4 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 73°C, 140 W CW Case Temperature 74°C, 28 W CW Symbol RθJC Value (1,2) 0.41 0.47 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S4140HR3 MRF5S4140HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1250 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.42 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.3 — pF VGS(th) VGS(Q) VDS(on) gfs 2 3 0.1 — 3 4 0.2 6.2 4 5 0.3 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. N - CDMA, f = 465 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. Gps ηD ACPR IRL 20 28.5 — — 21 30 - 47.6 - 14 23 — - 45 -9 dB % dBc dB MRF5S4140HR3 MRF5S4140HSR3 2 RF Device Data Freescale Semiconductor B2 VBIAS + + C18 C8 B1 Z9 Z10 RF INPUT Z1 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C4 C5 C6 DUT Z2 C3 Z3 R1 Z4 Z5 Z6 Z7 C7 Z8 C9 C10 C11 C12 Z11 Z12 Z13 Z14 Z15 Z16 L1 C16 C17 C19 + C20 + C21 + C22 VSUPPLY Z17 C14 C13 Z18 Z19 RF OUTPUT C15 0.402″ x 0.080″ Microstrip 1.266″ x 0.080″ Microstrip 0.211″ x 0.220″ Microstrip 0.139″ x 0.220″ Microstrip 0.239″ x 0.220″ Microstrip 0.040″ x 0.640″ Microstrip 0.080″ x 0.640″ Microstrip 0.276″ x 0.640″ Microstrip 1.000″ x 0.226″ Microstrip 0.498″ x 0.630″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB 0.125″ x 0.220″ Microstrip 0.324″ x 0.220″ Microstrip 0.050″ x 0.220″ Microstrip 0.171″ x 0.080″ Microstrip 0.377″ x 0.080″ Microstrip 0.358″ x 0.080″ Microstrip 0.361″ x 0.080″ Microstrip 0.131″ x 0.080″ Microstrip 0.277″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 1. MRF5S4140HR3(SR3) Test Circuit Schematic — 460 - 470 MHz Table 5. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 460 - 470 MHz Part B1, B2 C1, C14 C2, C13 C3 C4 C5 C6, C7 C8 C9, C10 C11 C12 C15 C16 C17 C18, C19, C20, C21 C22 L1 R1 Description Ferrite Beads, Short 120 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 18 pF Chip Capacitor 30 pF Chip Capacitor 24 pF Chip Capacitor 13 pF Chip Capacitors 0.02 μF, 50 V Chip Capacitor 22 pF Chip Capacitors 1.0 pF Chip Capacitor 5.6 pF Chip Capacitor 1.5 pF Chip Capacitor 47 pF Chip Capacitor 0.56 μF, 50 V Chip Capacitor 10 μF, 35 V Tantalum Chip Capacitors 470 μF, 63 V Electrolytic Capacitor 39 nH Inductor 100 Ω, 1/4 W Chip Resistor (1210) Part Number 2743019447 100B121JP500X 27291SL 100B180JP500X 100B300JP500X 100B240JP500X 100B130JP500X 200B203MW50B 100B220JP500X 100B1R0JP500X 100B5R6JP500X 100B1R5JP500X 100B47JP500X C1825C564J5GAC T491D106K035AS SME63V471M12X25LL 1812SMS- 39N Manufacturer Fair- Rite ATC Johanson ATC ATC ATC ATC ATC ATC ATC ATC ATC ATC Kemet Kemet United Chemi - Con Coilcraft MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 3 C18 C22 + B2 C8 450 MHz Rev. 0 Ver. B C19 C20 C21 C17 C7 C1 C3 C16 R1 C4 CUT OUT AREA L1 C10 C11 C12 C13 C14 C15 B1 C9 C2 C5 C6 Figure 2. MRF5S4140HR3(SR3) Test Circuit Component Layout — 460 - 470 MHz MRF5S4140HR3 MRF5S4140HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 460 - 470 MHz 21.5 21 20.5 Gps, POWER GAIN (dB) 20 19.5 19 18.5 18 17.5 17 16.5 16 430 440 450 460 470 480 f, FREQUENCY (MHz) ALT1 ηD VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 1250 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ACPR IRL Gps 38 35 32 29 26 −40 ACPR (dBc), ALT1 (dBc) −45 −50 −55 −60 −65 −70 490 ηD, DRAIN EFFICIENCY (%) −1 −3 −5 −7 −9 −11 −13 ηD, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 1250 mA 100 Pout, OUTPUT POWER (WATTS) PEP 400 ACPR (dBc), ALT1 (dBc) 1850 mA −30 −35 −40 −45 950 mA IDQ = 650 mA −2 −4 −6 −8 −10 −12 −14 1550 mA Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg. 20.8 20.3 19.8 Gps, POWER GAIN (dB) 19.3 18.8 18.3 17.8 17.3 16.8 16.3 15.8 430 440 450 460 470 480 f, FREQUENCY (MHz) ALT1 IRL ηD VDD = 28 Vdc, Pout = 56 W (Avg.) IDQ = 1250 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ACPR Gps 55 50 45 40 35 −35 −40 −45 −50 −55 −60 490 Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 56 Watts Avg. 23 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1850 mA 22 Gps, POWER GAIN (dB) 21 20 19 18 17 6 10 100 Pout, OUTPUT POWER (WATTS) PEP 400 1550 mA 1250 mA 950 mA 650 mA −10 −15 −20 −25 VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing 10 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — 460 - 470 MHz IMD, INTERMODULATION DISTORTION (dBc) −30 −35 VDD = 28 Vdc, IDQ = 1250 mA, f1 = 465 MHz f2 = 467.5 MHz, Two−Tone Measurements IMD, INTERMODULATION DISTORTION (dBc) −25 0 VDD = 28 Vdc, Pout = 100 W (PEP) IDQ = 1250 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 465 MHz −10 3rd Order −40 −45 5th Order −50 −55 −60 10 7th Order 100 Pout, OUTPUT POWER (WATTS) PEP 200 −20 −30 3rd Order −40 5th Order 7th Order −50 0.1 1 TWO−TONE SPACING (MHz) 10 60 Figure 7. Intermodulation Distortion Products versus Output Power 60 Figure 8. Intermodulation Distortion Products versus Tone Spacing P6dB = 53.57 dBm (227 W) Ideal P3dB = 52.99 dBm (198 W) P1dB = 52.21 dBm (166 W) Actual Pout, OUTPUT POWER (dBm) 56 52 48 VDD = 28 Vdc, IDQ = 1250 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 465 MHz 23 27 31 35 39 44 40 19 Pin, INPUT POWER (dBm) Figure 9. Pulse CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 1250 mA, f = 465 MHz N−CDMA IS−95 (Pilot, Sync, Paging Traffic Codes 8 Through 13) 25_C 30 Gps 20 25_C 10 85_C ηD 25_C −30_C 85_C 10 Pout, OUTPUT POWER (WATTS) AVG. −75 60 ALT1 TC = −30_C 85_C −59 −30_C −51 −35 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) 40 ACPR −43 −67 25_C 0 1 Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF5S4140HR3 MRF5S4140HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 460 - 470 MHz 26 25 24 Gps, POWER GAIN (dB) 23 22 21 ηD TC = −30_C 25_C Gps 25_C 85_C 60 50 40 30 20 10 0 300 20 85_C 19 18 2 10 Pout, OUTPUT POWER (WATTS) CW 100 Figure 11. Power Gain and Drain Efficiency versus CW Output Power 21.5 21 Gps, POWER GAIN (dB) 20.5 20 19.5 19 32 V 18.5 18 17.5 0 50 100 28 V VDD = 12 V 16 V 24 V 20 V 150 200 250 IDQ = 1250 mA f = 465 MHz Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 7 ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc IDQ = 1250 mA f = 465 MHz 80 −30_C 70 Zo = 2 Ω f = 490 MHz Zload f = 490 MHz f = 440 MHz Zsource f = 440 MHz VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. f MHz 440 445 450 455 460 465 470 475 480 485 490 Zsource W 0.359 - j1.19 0.389 - j1.11 0.379 - j1.03 0.360 - j0.959 0.355 - j0.873 0.352 - j0.773 0.350 - j0.710 0.350 - j0.628 0.356 - j0.540 0.355 - j0.473 0.345 - j0.388 Zload W 1.35 - j0.870 1.31 - j0.743 1.34 - j0.641 1.32 - j0.539 1.31 - j0.420 1.30 - j0.274 1.29 - j0.173 1.28 - j0.044 1.29 + j0.090 1.29 + j0.195 1.28 + j0.313 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance — 460 - 470 MHz MRF5S4140HR3 MRF5S4140HSR3 8 RF Device Data Freescale Semiconductor B2 VBIAS + + C18 C8 B1 Z9 Z10 RF INPUT Z1 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C4 C5 C6 DUT Z2 C3 Z3 R1 Z4 Z5 Z6 Z7 C7 Z8 C9 C10 C11 C12 Z11 Z12 Z13 Z14 Z15 Z16 L1 C16 C17 C19 + C20 + C21 + C22 VSUPPLY Z17 C14 C13 Z18 Z19 RF OUTPUT C15 0.402″ x 0.080″ Microstrip 1.266″ x 0.080″ Microstrip 0.211″ x 0.220″ Microstrip 0.139″ x 0.220″ Microstrip 0.239″ x 0.220″ Microstrip 0.040″ x 0.640″ Microstrip 0.080″ x 0.640″ Microstrip 0.276″ x 0.640″ Microstrip 1.000″ x 0.226″ Microstrip 0.498″ x 0.630″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB 0.125″ x 0.220″ Microstrip 0.324″ x 0.220″ Microstrip 0.050″ x 0.220″ Microstrip 0.171″ x 0.080″ Microstrip 0.377″ x 0.080″ Microstrip 0.358″ x 0.080″ Microstrip 0.361″ x 0.080″ Microstrip 0.131″ x 0.080″ Microstrip 0.277″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 14. MRF5S4140HR3(SR3) Test Circuit Schematic — 420 - 430 MHz Table 6. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 420 - 430 MHz Part B1, B2 C1, C14 C2, C13 C3 C4 C5 C6, C7 C8 C9, C10 C11 C12 C15 C16 C17 C18, C19, C20, C21 C22 L1 R1 Description Ferrite Beads, Short 120 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 18 pF Chip Capacitor 39 pF Chip Capacitor 24 pF Chip Capacitor 13 pF Chip Capacitors 0.02 μF, 50 V Chip Capacitor 22 pF Chip Capacitors 1.0 pF Chip Capacitor 5.6 pF Chip Capacitor 1.5 pF Chip Capacitor 47 pF Chip Capacitor 0.56 μF, 50 V Chip Capacitor 10 μF, 35 V Tantalum Chip Capacitors 470 μF, 63 V Electrolytic Capacitor 39 nH Inductor 100 Ω, 1/4 W Chip Resistor (1210) Part Number 2743019447 100B121JP500X 27291SL 100B180JP500X 100B390JP500X 100B240JP500X 100B130JP500X 200B203MW50B 100B220JP500X 100B1R0JP500X 100B5R6JP500X 100B1R5JP500X 100B47JP500X C1825C564J5GAC T491D106K035AS SME63V471M12X25LL 1812SMS- 39N Manufacturer Fair- Rite ATC Johanson ATC ATC ATC ATC ATC ATC ATC ATC ATC ATC Kemet Kemet United Chemi - Con Coilcraft MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 9 C18 C22 - B2 C8 450 MHz Rev. 0 Ver. A C19 C20 C21 C17 C7 + B1 C1 C3 C16 R1 L1 C4 CUT OUT AREA C10 C11 C12 C13 C14 C15 C9 C2 C5 C6 Figure 15. MRF5S4140HR3(SR3) Test Circuit Component Layout — 420 - 430 MHz MRF5S4140HR3 MRF5S4140HSR3 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 420 - 430 MHz 21.7 21.4 21.1 Gps, POWER GAIN (dB) 20.8 20.5 20.2 19.9 19.6 19.3 19 410 415 420 425 430 435 f, FREQUENCY (MHz) ALT1 ACPR IRL Gps VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 1250 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ηD 33 31 29 27 25 ACPR (dBc), ALT1 (dBc) −41 −47 −53 −59 −65 440 −5 −8 −11 −14 −17 ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) −4 −7 −10 −13 −16 −19 IRL, INPUT RETURN LOSS (dB) Figure 16. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg. 21.5 21 20.5 Gps, POWER GAIN (dB) 20 19.5 19 18.5 18 17.5 17 16.5 410 415 420 425 430 435 f, FREQUENCY (MHz) ALT1 IRL Gps VDD = 28 Vdc, Pout = 56 W (Avg.) IDQ = 1250 mA, N−CDMA IS−95 (Pilot Sync, Paging, Traffic Codes 8 Through 13) ACPR ηD 47 44.5 42 39.5 37 −35 −40 −45 −50 −55 −60 440 Figure 17. Single - Carrier N - CDMA Broadband Performance @ Pout = 56 Watts Avg. MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 11 IRL, INPUT RETURN LOSS (dB) f = 450 MHz f = 450 MHz Zsource f = 400 MHz f = 400 MHz Zo = 5 Ω Zload VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. f MHz 400 405 410 415 420 425 430 435 440 445 450 Zsource W 0.454 - j0.530 0.476 - j0.435 0.430 - j0.360 0.455 - j0.281 0.419 - j0.153 0.421 - j0.135 0.435 - j0.032 0.426 + j0.048 0.407 + j0.044 0.429 + j0.262 0.452 + j0.341 Zload W 1.87 - j0.530 1.91 - j0.376 1.88 - j0.276 1.91 - j0.046 1.89 - j0.019 1.92 + j0.128 1.97 + j0.276 1.99 + j0.392 1.99 + j0.537 2.05 + j0.675 2.10 + j0.765 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 18. Series Equivalent Source and Load Impedance — 420 - 430 MHz MRF5S4140HR3 MRF5S4140HSR3 12 RF Device Data Freescale Semiconductor B2 VBIAS + C16 C7 B1 Z9 Z10 RF INPUT R1 Z1 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C3 C4 C5 DUT Z2 Z3 Z4 Z5 Z6 Z7 C6 Z8 C8 C9 C10 C11 Z11 Z12 Z13 Z14 Z15 Z16 L1 C14 C15 + C17 + C18 + C19 + C20 VSUPPLY Z17 C13 C12 Z18 RF OUTPUT 0.402″ x 0.080″ Microstrip 1.266″ x 0.080″ Microstrip 0.211″ x 0.220″ Microstrip 0.139″ x 0.220″ Microstrip 0.239″ x 0.220″ Microstrip 0.040″ x 0.640″ Microstrip 0.080″ x 0.640″ Microstrip 0.276″ x 0.640″ Microstrip 1.000″ x 0.226″ Microstrip 0.498″ x 0.630″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 PCB 0.125″ x 0.220″ Microstrip 0.324″ x 0.220″ Microstrip 0.050″ x 0.220″ Microstrip 0.171″ x 0.080″ Microstrip 0.377″ x 0.080″ Microstrip 0.358″ x 0.080″ Microstrip 0.361″ x 0.080″ Microstrip 0.408″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 19. MRF5S4140HR3(SR3) Test Circuit Schematic — 489 - 499 MHz Table 7. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 489 - 499 MHz Part B1, B2 C1, C13 C2 C3, C4 C5, C6 C7 C8, C9 C10 C11 C12 C14 C15 C16, C17, C18, C19 C20 L1 R1 Description Ferrite Beads, Short 120 pF Chip Capacitors 18 pF Chip Capacitor 24 pF Chip Capacitors 13 pF Chip Capacitors 0.02 μF, 50 V Chip Capacitor 22 pF Chip Capacitors 1.0 pF Chip Capacitor 5.6 pF Chip Capacitor 0.8- 8.0 pF Variable Capacitor, Gigatrim 47 pF Chip Capacitor 0.56 μF, 50 V Chip Capacitor 10 μF, 35 V Tantalum Capacitors 470 μF, 63 V Electrolytic Capacitor 39 nH Inductor 100 Ω, 1/4 W Chip Resistor (1210) Part Number 2743019447 100B121JP500X 100B180JP500X 100B240JP500X 100B130JP500X 200B203MW50B 100B220JP500X 100B1R0JP500X 100B5R6JP500X 27291SL 100B47JP500X C1825C564J5GAC T491D106K035AS SME63V471M12X25LL 1812SMS- 39N Manufacturer Fair- Rite ATC ATC ATC ATC ATC ATC ATC ATC Johanson ATC Kemet Kemet United Chemi - Con Coilcraft MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 13 C16 C20 - B2 C7 450 MHz Rev. 0 Ver. A C17 C18 C19 C15 C6 + B1 C1 C2 C14 R1 L1 C3 CUT OUT AREA C9 C10 C11 C12 C13 C8 C4 C5 Figure 20. MRF5S4140HR3(SR3) Test Circuit Component Layout — 489 - 499 MHz MRF5S4140HR3 MRF5S4140HSR3 14 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 489 - 499 MHz 21.7 21.4 21.1 Gps, POWER GAIN (dB) 20.8 20.5 20.2 19.9 19.6 19.3 19 480 485 490 495 500 505 f, FREQUENCY (MHz) ALT1 ACPR IRL VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1250 mA N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ηD Gps 33 31 29 27 25 ACPR (dBc), ALT1 (dBc) −45 −50 −55 −60 −65 510 −5 −8 −11 −14 −17 ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) −6 −8 −10 −12 −14 −16 IRL, INPUT RETURN LOSS (dB) Figure 21. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg. 22 21.5 21 Gps, POWER GAIN (dB) 20.5 20 19.5 19 18.5 18 17.5 17 480 485 490 495 500 505 f, FREQUENCY (MHz) ALT1 IRL ACPR Gps VDD = 28 Vdc, Pout = 56 W (Avg.), IDQ = 1250 mA N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ηD 47 44.5 42 39.5 37 −35 −40 −45 −50 −55 −60 510 Figure 22. Single - Carrier N - CDMA Broadband Performance @ Pout = 56 Watts Avg. MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 15 IRL, INPUT RETURN LOSS (dB) f = 519 MHz Zo = 2 Ω Zload f = 519 MHz f = 469 MHz Zsource f = 469 MHz VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. f MHz 469 474 479 484 489 494 499 504 509 514 519 Zsource W 0.454 - j0.742 0.510 - j0.637 0.467 - j0.581 0.495 - j0.513 0.495 - j0.457 0.478 - j0.360 0.505 - j0.295 0.502 - j0.249 0.502 - j0.048 0.499 + j0.002 0.502 + j0.003 Zload W 1.08 - j0.129 1.12 + j0.043 1.07 + j0.160 1.09 + j0.294 1.12 + j0.430 1.16 + j0.573 1.18 + j0.586 1.11 + j0.653 1.07 + j0.810 1.03 + j1.01 1.03 + j1.10 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 23. Series Equivalent Source and Load Impedance — 489 - 499 MHz MRF5S4140HR3 MRF5S4140HSR3 16 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1011 MTTF FACTOR (HOURS X AMPS2) 1010 109 108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 24. MTTF Factor versus Junction Temperature MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 17 N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 1.2288 MHz Channel BW . .. .. .... . .. .... .................. .... ............ ................. . . .. . . . . . . . . . . . . . . . . . . −ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . ............. . ..... ..... ............. .. ..... ... . ...... ..... ......... .. ......... . .. ..... . .. .. ......... ......... .... ...... ....... .... . .. .. ...... . ... ...... .... .... . ..... ... ........ . ... ......... . . .. .... . ...... .... ....... .. . .. ........ −ACPR in 30 kHz +ACPR in 30 kHz ............ ..... ......... . ........... ..... .. . .. .......... .. .... ........... Integrated BW Integrated BW ............ . .. ..... ... ............ .. . ....... .... ..... Figure 25. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 26. Single - Carrier N - CDMA Spectrum MRF5S4140HR3 MRF5S4140HSR3 18 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRF5S4140HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF5S4140HSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF5S4140HR3 MRF5S4140HSR3 2Rev. 2, 5/2006 0 Document Number: MRF5S4140H RF Device Data Freescale Semiconductor