402CS-23NXGL

Freescale Semiconductor Technical Data Document Number: MMG20271H Rev. 0, 12/2010 Enhancement Mode pHEMT Technology (E-pHEMT) High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain. Features • Frequency: 1500--2700 MHz • Noise Figure: 1.7 dB @ 2140 MHz • P1dB: 27.5 dBm @ 2140 MHz • Small--Signal Gain: 16 dB @ 2140 MHz • Third Order Output Intercept Point: 42 dBm @ 2140 MHz • Single 5 Volt Supply • Supply Current: 180 mA • 50 Ohm Operation (some external matching required) • Low Cost QFN Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. MMG20271HT1 1500-2700 MHz, 16 dB 27.5 dBm E-pHEMT CASE 2131-01 QFN 3x3 PLASTIC Table 1. Typical Performance (1) Characteristic Noise Figure Input Return Loss (S11) Output Return Loss (S22) Small--Signal Gain (S21) Power Output @ 1dB Compression Third Order Input Intercept Point Third Order Output Intercept Point Symbol NF IRL ORL Gp P1db IIP3 OIP3 1500 MHz 2.0 --16 --20 18 27 22 40 2140 MHz 1.7 --14 --22 16 27.5 26 42 2700 MHz 1.9 --17 --17 14 28 28 42 Unit dB dB dB dB dBm dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VDD IDD Pin Tstg TJ Value 6 400 25 --65 to +150 150 Unit V mA dBm °C °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VDD = 5 Vdc, TA = 25°C, 50 ohm system, application circuit tuned for specified frequency. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 96°C, 5 Vdc, 190 mA, no RF applied Symbol RθJC Value (3) 38 Unit °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. MMG20271HT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA = 25°C, 50 ohm system, in Freescale Application Circuit) Characteristic Small--Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Input Intercept Point Third Order Output Intercept Point Reverse Isolation (S12) Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IIP3 OIP3 |S12| NF IDD VDD Min 13.9 — — — — — — — 148 — Typ 16 --14 --22 27.5 26 42 --23 1.7 180 5 Max — — — — — — — — 227 — Unit dB dB dB dBm dBm dBm dB dB mA V 1. For reliable operation, the junction temperature should not exceed 150°C. Table 5. Functional Pin Description Name RFin (1) Pin Number 3 Description RF input for the power amplifier. RFin has an RF choke to ground internal to the package. No external blocking is necessary unless externally applied DC is present on the trace. RF output for the power amplifier. This pin is DC coupled and requires a DC blocking capacitor. Bias voltage and current adjust pin. The center metal base of the QFN package provides both DC and RF ground as well as the heat sink contact for the IC. VBA N.C. N.C. 12 N.C. N.C. RFin 1 2 3 4 5 6 N.C. N.C. N.C. (Top View) GND 11 10 9 8 7 RFout/VDD RFout/VDD N.C. RFout/ VDD VBA GND 8, 9 12 Backside Center Metal 1. The RF input has a DC path to ground and therefore may require an external decoupling capacitor. Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 1 Package Peak Temperature 260 Unit °C MMG20271HT1 2 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2140 MHz R2 VSUPPLY R1 C7 12 11 10 C3 L2 Z3 L1 Z4 C6 C5 1 BIAS CIRCUIT 9 RF OUTPUT C2 2 RF INPUT 8 Z1 C1 Z2 3 7 4 Z1 Z2 5 6 Z3 Z4 0.041″ x 0.030″ Microstrip 0.198″ x 0.021″ Microstrip 0.139″ x 0.021″ Microstrip 0.026″ x 0.011″ Microstrip Figure 2. MMG20271HT1 Test Circuit Schematic Table 8. MMG20271HT1 Test Circuit Component Designations and Values Part C1 C2, C3, C7 C4 C5 C6 L1, R2 (1) L2 R1 PCB Description 1.8 pF Chip Capicitor 18 pF Chip Capacitors Component Not Used 0.1 μF Chip Capacitor 1.5 pF Chip Capacitor 0 Ω, 1 A Chip Resistor 23 nH Chip Inductor 220 Ω, 1/16 W Chip Resistor 0.010″, εr = 3.38, Multilayer GRM155R61A104K01D GJM1555C1H1R5BB01D ERJ2GE0R00X 0402CS--23NXGL RC0402FR--07220RL IS680--338 Murata Murata Panasonic Coilcraft Yageo Isola Part Number GJM1555C1H1R8BB01D GJM1555C1H180GB01D Manufacturer Murata Murata 1. Location L1 can be an inductor, resistor or jumper depending on frequency. MMG20271HT1 RF Device Data Freescale Semiconductor 3 50 OHM APPLICATION CIRCUIT: 2140 MHz VDD 5 V VBA R2 R1 RFIN C7 C5 C4* C3 L2 C1 L1 C2 C6 RFOUT QFN 3x3--12A Rev. 0 *C4 component not used. Figure 3. MMG20271HT1 Test Circuit Component Layout Table 8. MMG20271HT1 Test Circuit Component Designations and Values Part C1 C2, C3, C7 C4 C5 C6 L1, R2 (1) L2 R1 PCB Description 1.8 pF Chip Capicitor 18 pF Chip Capacitors Component Not Used 0.1 μF Chip Capacitor 1.5 pF Chip Capacitor 0 Ω, 1 A Chip Resistor 23 nH Chip Inductor 220 Ω, 1/16 W Chip Resistor 0.010″, εr = 3.38, Multilayer GRM155R61A104K01D GJM1555C1H1R5BB01D ERJ2GE0R00X 0402CS--23NXGL RC0402FR--07220RL IS680--338 Murata Murata Panasonic Coilcraft Yageo Isola Part Number GJM1555C1H1R8BB01D GJM1555C1H180GB01D Manufacturer Murata Murata 1. Location L1 can be an inductor, resistor or jumper depending on frequency. (Component Designations and Values table repeated for reference.) MMG20271HT1 4 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz 18 Gp, SMALL--SIGNAL GAIN (dB) --13 17 IRL, INPUT RETURN LOSS (dB) TC = --40°C 25°C 85°C --14 TC = --40°C --15 85°C 25°C VDD = 5 Vdc --17 2000 2075 2150 f, FREQUENCY (MHz) 2225 2300 16 15 VDD = 5 Vdc 14 2000 2075 2150 f, FREQUENCY (MHz) 2225 2300 --16 Figure 4. Small-Signal Gain (S21) versus Frequency --16 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 29 Figure 5. Input Return Loss (S11) versus Frequency --18 TC = 85°C --20 25°C --22 --40°C --24 2000 VDD = 5 Vdc 2075 2150 f, FREQUENCY (MHz) 2225 2300 28 TC = --40°C 25°C 27 85°C 26 VDD = 5 Vdc 25 2040 2090 2140 f, FREQUENCY (MHz) 2190 2240 Figure 6. Output Return Loss (S22) versus Frequency OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 45 TC = --40°C 25°C 41 85°C 39 VDD = 5 Vdc 37 2040 2090 2140 f, FREQUENCY (MHz) 2190 2240 0 2000 NF, NOISE FIGURE (dB) 2.4 Figure 7. P1dB versus Frequency TC = 85°C 1.8 25°C 1.2 --40°C 43 0.6 VDD = 5 Vdc 2075 2150 f, FREQUENCY (MHz) 2225 2300 Figure 8. Third Order Output Intercept Point versus Frequency Figure 9. Noise Figure versus Frequency MMG20271HT1 RF Device Data Freescale Semiconductor 5 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz ACPR, ADJACENT CHANNEL POWER RATIO (dBc) --20 --30 VDD = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --40 TC = 85°C --50 25°C --60 16 --40°C 18 20 Pout, OUTPUT POWER (dBm) 22 24 Figure 10. Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power MMG20271HT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1900 MHz R2 VSUPPLY R1 C7 12 11 10 C3 L2 Z3 L1 Z4 C6 C5 1 BIAS CIRCUIT 9 RF OUTPUT C2 2 RF INPUT 8 Z1 C1 Z2 3 7 4 Z1 Z2 5 6 Z3 Z4 0.041″ x 0.030″ Microstrip 0.175″ x 0.021″ Microstrip 0.166″ x 0.021″ Microstrip 0.026″ x 0.011″ Microstrip Figure 11. MMG20271HT1 Test Circuit Schematic Table 9. MMG20271HT1 Test Circuit Component Designations and Values Part C1, C6 C2, C3, C7 C4 C5 L1 L2 R1 R2 PCB Description 1.6 pF Chip Capicitors 18 pF Chip Capacitors Component Not Used 0.1 μF Chip Capacitor 1 nH Chip Inductor 23 nH Chip Inductor 220 Ω, 1/16 W Chip Resistor 0 Ω, 1 A Chip Resistor 0.010″, εr = 3.38, Multilayer GRM155R61A104K01D 0402CS--1N0XGL 0402CS--23NXGL RC0402FR--07220RL ERJ2GE0R00X IS680--338 Murata Coilcraft Coilcraft Yageo Panasonic Isola Part Number GJM1555C1H1R6BB01D GJM1555C1H180GB01D Manufacturer Murata Murata MMG20271HT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 1900 MHz VDD 5 V VBA R2 R1 RFIN C1 C7 L1 *C4 component not used. C5 C4* C3 L2 C6 C2 RFOUT QFN 3x3--12A Rev. 0 Figure 12. MMG20271HT1 Test Circuit Component Layout Table 9. MMG20271HT1 Test Circuit Component Designations and Values Part C1, C6 C2, C3, C7 C4 C5 L1 L2 R1 R2 PCB Description 1.6 pF Chip Capicitors 18 pF Chip Capacitors Component Not Used 0.1 μF Chip Capacitor 1 nH Chip Inductor 23 nH Chip Inductor 220 Ω, 1/16 W Chip Resistor 0 Ω, 1 A Chip Resistor 0.010″, εr = 3.38, Multilayer GRM155R61A104K01D 0402CS--1N0XGL 0402CS--23NXGL RC0402FR--07220RL ERJ2GE0R00X IS680--338 Murata Coilcraft Coilcraft Yageo Panasonic Isola Part Number GJM1555C1H1R6BB01D GJM1555C1H180GB01D Manufacturer Murata Murata (Component Designations and Values table repeated for reference.) MMG20271HT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 1900 MHz 19 Gp, SMALL--SIGNAL GAIN (dB) --5 18 IRL, INPUT RETURN LOSS (dB) --10 17 --15 16 VDD = 5 Vdc 15 1750 1825 1900 f, FREQUENCY (MHz) 1975 2050 --20 VDD = 5 Vdc --25 1750 1825 1900 f, FREQUENCY (MHz) 1975 2050 Figure 13. Small-Signal Gain (S21) versus Frequency 0 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 29 Figure 14. Input Return Loss (S11) versus Frequency --10 28 --20 27 --30 VDD = 5 Vdc --40 1750 1825 1900 f, FREQUENCY (MHz) 1975 2050 26 VDD = 5 Vdc 25 1800 1850 1900 f, FREQUENCY (MHz) 1950 2000 Figure 15. Output Return Loss (S22) versus Frequency OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 45 2.4 Figure 16. P1dB versus Frequency NF, NOISE FIGURE (dB) VDD = 5 Vdc 1 MHz Tone Spacing 43 2.2 41 2 39 1.8 VDD = 5 Vdc 37 1800 1850 1900 f, FREQUENCY (MHz) 1950 2000 1.6 1750 1825 1900 f, FREQUENCY (MHz) 1975 2050 Figure 17. Third Order Output Intercept Point versus Frequency Figure 18. Noise Figure versus Frequency MMG20271HT1 RF Device Data Freescale Semiconductor 9 50 OHM APPLICATION CIRCUIT: 2700 MHz R2 VSUPPLY R1 C7 12 11 10 C3 L2 Z3 L1 Z4 C6 C5 1 BIAS CIRCUIT 9 RF OUTPUT C2 2 RF INPUT 8 Z1 C1 Z2 3 7 4 Z1 Z2 5 6 Z3 Z4 0.041″ x 0.030″ Microstrip 0.091″ x 0.021″ Microstrip 0.056″ x 0.021″ Microstrip 0.026″ x 0.011″ Microstrip Figure 19. MMG20271HT1 Test Circuit Schematic Table 10. MMG20271HT1 Test Circuit Component Designations and Values Part C1 C2, C3, C7 C4 C5 C6 L1, R2 (1) L2 R1 PCB Description 1.8 pF Chip Capicitor 18 pF Chip Capacitors Component Not Used 0.1 μF Chip Capacitor 1.5 pF Chip Capacitor 0 Ω, 1 A Chip Resistor 23 nH Chip Inductor 220 Ω, 1/16 W Chip Resistor 0.010″, εr = 3.38, Multilayer GRM155R61A104K01D GJM1555C1H1R5BB01D ERJ2GE0R00X 0402CS--23NXGL RC0402FR--07220RL IS680--338 Murata Murata Panasonic Coilcraft Yageo Isola Part Number GJM1555C1H1R8BB01D GJM1555C1H180GB01D Manufacturer Murata Murata 1. Location L1 can be an inductor, resistor or jumper depending on frequency. MMG20271HT1 10 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2700 MHz VDD 5 V VBA R2 R1 RFIN C1 C7 L1 *C4 component not used. C5 C4* C3 L2 C6 C2 RFOUT QFN 3x3--12A Rev. 0 Figure 20. MMG20271HT1 Test Circuit Component Layout Table 10. MMG20271HT1 Test Circuit Component Designations and Values Part C1 C2, C3, C7 C4 C5 C6 L1, R2 (1) L2 R1 PCB Description 1.8 pF Chip Capicitor 18 pF Chip Capacitors Component Not Used 0.1 μF Chip Capacitor 1.5 pF Chip Capacitor 0 Ω, 1 A Chip Resistor 23 nH Chip Inductor 220 Ω, 1/16 W Chip Resistor 0.010″, εr = 3.38, Multilayer GRM155R61A104K01D GJM1555C1H1R5BB01D ERJ2GE0R00X 0402CS--23NXGL RC0402FR--07220RL IS680--338 Murata Murata Panasonic Coilcraft Yageo Isola Part Number GJM1555C1H1R8BB01D GJM1555C1H180GB01D Manufacturer Murata Murata 1. Location L1 can be an inductor, resistor or jumper depending on frequency. (Component Designations and Values table repeated for reference.) MMG20271HT1 RF Device Data Freescale Semiconductor 11 50 OHM TYPICAL CHARACTERISTICS: 2700 MHz 16 Gp, SMALL--SIGNAL GAIN (dB) --5 15 IRL, INPUT RETURN LOSS (dB) --10 14 --15 13 VDD = 5 Vdc 12 2550 2625 2700 f, FREQUENCY (MHz) 2775 2850 --20 VDD = 5 Vdc --25 2550 2625 2700 f, FREQUENCY (MHz) 2775 2850 Figure 21. Small-Signal Gain (S21) versus Frequency --5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 29 Figure 22. Input Return Loss (S11) versus Frequency --10 28 --15 27 --20 VDD = 5 Vdc --25 2550 2625 2700 f, FREQUENCY (MHz) 2775 2850 26 VDD = 5 Vdc 25 2600 2650 2700 f, FREQUENCY (MHz) 2750 2800 Figure 23. Output Return Loss (S22) versus Frequency OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 45 2.2 Figure 24. P1dB versus Frequency NF, NOISE FIGURE (dB) VDD = 5 Vdc 1 MHz Tone Spacing 43 2 41 1.8 39 1.6 VDD = 5 Vdc 37 2600 2650 2700 f, FREQUENCY (MHz) 2750 2800 1.4 2550 2625 2700 f, FREQUENCY (MHz) 2775 2850 Figure 25. Third Order Output Intercept Point versus Frequency Figure 26. Noise Figure versus Frequency MMG20271HT1 12 RF Device Data Freescale Semiconductor 3.00 0.70 0.30 2.00 0.50 1.6 x 1.6 Solder Pad with Thermal Via Structure 3.40 Figure 27. PCB Pad Layout for QFN 3x3 MG01 YWZ Figure 28. Product Marking MMG20271HT1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MMG20271HT1 14 RF Device Data Freescale Semiconductor MMG20271HT1 RF Device Data Freescale Semiconductor 15 MMG20271HT1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time failure analysis is limited to electrical signature analysis. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Dec. 2010 • Initial Release of Data Sheet Description MMG20271HT1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MMG20271HT1 Rev. 18 0, 12/2010 Document Number: MMG20271H RF Device Data Freescale Semiconductor