600S100JW

Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. • Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power — 900 mW PEP Power Gain — 13 dB Efficiency — 38% • High Gain, High Efficiency and High Linearity • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • N Suffix Indicates Lead - Free Terminations • In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel. MW4IC001NR4 MW4IC001MR4 800 - 2170 MHz, 900 mW, 28 V W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 4.58 0.037 - 65 to +150 150 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case @ 85°C Symbol RθJC Value 27.3 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 0 (Minimum) M1 (Minimum) C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.  Freescale Semiconductor, Inc., 2005. All rights reserved. MW4IC001NR4 MW4IC001MR4 1 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 V, ID = 50 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 10 mA) Drain - Source On - Voltage (VGS = 10 V, ID = 0.05 A) Forward Transconductance (VDS = 10 V, ID = 0.1 A) Dynamic Characteristics Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 12 mA, f = 2170 MHz) Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Gps — 13 — dB Coss Crss — — 45 0.62 — — pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2 — — 3 3.7 0.48 0.05 5 5 0.9 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 10 1 µAdc µAdc µAdc Symbol Min Typ Max Unit ηD — 29 — % IMD — - 28 — dBc IRL — - 18 — dB P1dB Gps ηD IRL — 12 35 - 10 0.85 13 38 - 16 — — — — W dB % dB MW4IC001NR4 MW4IC001MR4 2 RF Device Data Freescale Semiconductor VGG C1 C2 Z6 C7 Z7 R1 RF INPUT DUT Z1 C9 C3 C10 Z2 L1 C4 Z3 Z4 R2 Z5 Z8 L2 Z9 Z10 Z11 C5 C11 Z12 Z13 C13 RF OUTPUT C6 VDD + C8 C12 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 1.331″ 0.126″ 0.065″ 0.065″ 0.680″ 1.915″ 0.120″ x 0.044″ x 0.076″ x 0.175″ x 0.195″ x 0.145″ x 0.055″ x 0.141″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 PCB 0.062″ x 0.044″ to 0.615″ Taper 0.082″ x 0.615″ Microstrip 0.075″ x 0.044″ Microstrip 0.625″ x 0.044″ Microstrip 1.375″ x 0.044″ Microstrip Rogers RO4350, 0.020″, εr = 3.5 Figure 1. MW4IC001NR4(MR4) 900 MHz Test Circuit Schematic Table 6. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Designations and Values Part C1, C6 C2, C3, C5, C7 C4 C8 C9 C10, C11 C12 C13 L1 L2 R1 R2 Description 0.1 µF, 100 V Chip Capacitors 43 pF, 500 V Chip Capacitors 12 pF, 500 V Chip Capacitor 22 µF, 35 V Tantalum Chip Capacitor 4.7 pF, 500 V Chip Capacitor 0.6 - 4.5 pF, 500 V Variable Capacitors 2.7 pF, 500 V Chip Capacitor 3.3 pF, 500 V Chip Capacitor 5.6 nH Chip Inductor 10 nH Chip Inductor 100 W Chip Resistor 20 W Chip Resistor Part Number C1210C104K5RACTR 100B430JP500X 100B120JP500X T491X226K035AS 100B4R7CP500X 27271SL 100B2R7CP500X 100B3R3CP500X 0805 Series 1008 Series CRCW12061001F100 CRCW120620R0F100 Manufacturer Kemet ATC ATC Kemet ATC Johanson ATC ATC AVX ATC Dale Dale MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 3 VGG C1 C2 V DD C8 C6 C7 C9 C10 C3 R1 C4 L1 R2 L2 C5 C12 C11 C13 MW4IC001MR4 900 MHz Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Layout MW4IC001NR4 MW4IC001MR4 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS - 900 MHz ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IRL 46 42 38 34 30 26 22 18 14 10 855 IM3 Gps VDS = 28 Vdc Pout = 0.9 W (PEP) IDQ = 14 mA Two −Tone Measurement 100 kHz Tone Spacing ηD IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 50 −15 −17 −19 −21 −23 −25 −27 −29 −31 −33 865 870 875 880 885 890 895 900 −35 905 860 f1, FREQUENCY (MHz) Figure 3. Two-Tone Performance versus Frequency 15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 6 0 0.2 0.4 0.6 0.8 1.0 VDS = 28 Vdc IDQ = 14 mA f = 880 MHz P1dB Gps IMD, INTERMODULATION DISTORTION (dBc) ηD 60 55 50 45 40 35 30 25 20 ηD, DRAIN EFFICIENCY (%) −25 −30 IDQ = 8 mA −35 10 mA −40 −45 −50 −55 0.01 0.1 18 mA 16 mA 14 mA Two −Tone Measurement 100 kHz Tone Spacing 12 mA 1 10 VDS = 28 Vdc f1 = 880 MHz f2 = 880.1 MHz 1.2 15 1.4 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) PEP Figure 4. CW Performance versus Output Power Figure 5. Intermodulation Distortion versus Output Power −25 IMD, INTERMODULATION DISTORTION (dBc) −30 −35 −40 −45 −50 −55 −60 −65 7th Order −70 0.01 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP 5th Order Two −Tone Measurement 100 kHz Tone Spacing 3rd Order VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz f2 = 880.1 MHz IMD, INTERMODULATION DISTORTION (dBc) −25 −30 −35 −40 10 MHz −45 1 MHz Tone Spacing = 100 kHz 0.1 VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz, f2 = f1 + Tone Spacing Two −Tone Measurement 1 10 −50 0.01 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Third Order Intermodulation Distortion versus Output Power MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 5 Z5 VGG + C1 C2 Z4 C4 Z11 R1 RF INPUT DUT Z1 C3 C7 Z2 Z3 Z6 Z7 C5 Z8 Z9 Z10 Z13 Z14 Z15 RF OUTPUT Z12 VDD + C6 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.018″ 0.495″ 0.893″ 1.340″ 0.912″ 0.241″ 0.076″ 0.294″ x 0.044″ x 0.296″ x 0.500″ x 0.022″ x 0.022″ x 0.500″ x 0.150″ x 0.150″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.067″ x 0.264″ Microstrip 0.457″ x 0.492″ Microstrip 0.719″ x 0.022″ Microstrip 1.149″ x 0.022″ Microstrip 0.677″ x 0.434″ Microstrip 0.095″ x 0.264″ Microstrip 0.772″ x 0.044″ Microstrip Rogers RO4350, 0.020″, εr = 3.5 Figure 8. MW4IC001NR4(MR4) 1990 MHz Test Circuit Schematic Table 7. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Designations and Values Part C1, C6 C2, C4 C3, C5 C7 R1 Description 22 µF, 35 V Tantalum Capacitors 10 pF, 500 V Chip Capacitors 10 pF, 500 V Chip Capacitor 0.6 - 4.5 pF, 500 V Variable Capacitor 1 kW Chip Resistor Part Number T491X226K035AS 100B100JCA500X 600S100JW 27271SL CRCW12061021F100 Manufacturer Kemet ATC ATC Johanson Dale VGG C1 C2 R1 C3 C4 VDD C6 C5 C7 MW4IC001MR4 1990 MHz Rev 3 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 9. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Layout MW4IC001NR4 MW4IC001MR4 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS - 1990 MHz ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 1930 Gps IMD VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA Two−Tone Measurement, 100 kHz Tone Spacing IRL ηD −11 −14 −17 −20 −23 −26 −29 −32 −35 1990 1940 1950 1960 1970 1980 f1, FREQUENCY (MHz) Figure 10. Two-Tone Performance versus Frequency Gps ηD, DRAIN EFFICIENCY (%) 14.0 G ps , POWER GAIN (dB) 48 IMD, INTERMODULATION DISTORTION (dBc) 14.4 56 −30 IDQ = 20 mA −35 −40 −45 16 mA −50 −55 9.6 mA −60 0.01 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 12 mA VDD = 28 Vdc f1 = 1990 MHz, f2 = 1990.1 MHz Two −Tone Measurement 100 kHz Tone Spacing 13.6 40 13.2 P1dB VDD = 28 Vdc IDQ = 12 mA f = 1990 MHz 0.4 0.5 0.6 0.7 0.8 0.9 1.0 32 12.8 ηD 12.4 0.1 0.2 0.3 24 16 1.1 1.2 1.3 Pout, OUTPUT POWER (WATTS) Figure 11. CW Performance versus Output Power Figure 12. Intermodulation Distortion versus Output Power −35 −40 −45 −50 −55 −60 −65 −70 −75 0.01 7th Order VDD = 28 Vdc IDQ = 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz Two−Tone Measurement, 100 kHz Tone Spacing 0.1 OUTPUT POWER (WATTS) PEP 1 3rd Order 5th Order IMD, THIRD ORDER INTERMODULATION (dBc) −30 IMD, INTERMODULATION DISTORTION (dBc) −30 −35 −40 10 MHz −45 −50 −55 −60 0.01 100 kHz 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 MHz VDD = 28 Vdc IDQ = 12 mA f1 = 1990 MHz f2 = f1 + Tone Spacing Two −Tone Measurement 1 Figure 13. Intermodulation Distortion Products versus Output Power Figure 14. Third Order Intermodulation Distortion versus Output Power MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 7 Z5 VGG + C1 C2 Z4 C4 Z11 R1 RF INPUT DUT Z1 C3 C7 Z2 Z3 Z6 Z7 C5 Z8 Z9 Z10 Z13 Z14 Z15 RF OUTPUT Z12 VDD + C6 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.267″ 0.058″ 0.758″ 1.073″ 1.361″ 0.205″ 0.109″ 0.210″ x 0.044″ x 0.044″ x 0.256″ x 0.022″ x 0.022″ x 0.332″ x 0.150″ x 0.150″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.106″ x 0.344″ Microstrip 0.783″ x 0.500″ Microstrip 0.847″ x 0.022″ Microstrip 1.055″ x 0.022″ Microstrip 0.291″ x 0.387″ Microstrip 0.050″ x 0.287″ Microstrip 0.950″ x 0.044″ Microstrip Rogers RO4350, 0.020″, εr = 3.5 Figure 15. MW4IC001NR4(MR4) 2170 MHz Test Circuit Schematic Table 8. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Designations and Values Part C1, C6 C2, C4 C3, C5 C7 R1 Description 22 µF, 35 V Tantalum Capacitors 10 pF, 500 V Chip Capacitors 10 pF, 500 V Chip Capacitor 0.6 - 4.5 pF, 500 V Variable Capacitor 1 kW Chip Resistor Part Number T491X226K035AS 100B100JCA500X 600S100JW 27271SL CRCW12061021F100 Manufacturer Kemet ATC ATC Johanson Dale VGG C1 C2 R1 C4 VDD C6 C5 C3 C7 MW4IC001MR4 2170 MHz Rev 3 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 16. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Layout MW4IC001NR4 MW4IC001MR4 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS - 2170 MHz ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 32 IRL ηD −13 27 22 VDD = 28 Vdc Pout = 0.9 W (PEP) IDQ = 12 mA Two−Tone Measurement, 100 kHz Tone Spacing −18 −23 17 IMD Gps −28 12 2110 2120 2130 2140 2150 2160 −33 2170 f, FREQUENCY (MHz) Figure 17. Two-Tone Performance versus Frequency 13.8 13.4 G ps , POWER GAIN (dB) 13.0 12.6 12.2 11.8 11.4 ηD P1dB VDD = 28 Vdc IDQ = 12mA f = 2170 MHz Gps 60 50 40 30 20 10 ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) −20 −25 −30 −35 −40 −45 VDD = 28 Vdc f1 = 2170 MHz, f2 = 2170.1 MHz Two−Tone Measurement 100 kHz Tone Spacing IDQ = 7.2 mA 20 mA IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 16 mA 9.6 mA −50 0.01 12 mA 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 18. CW Performance versus Output Power Figure 19. Intermodulation Distortion versus Output Power IMD,THIRD ORDER INTERMODULATION (dBc) −20 IMD, INTERMODULATION DISTORTION (dBc) −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 7th Order 5th Order 3rd Order VDD = 28 Vdc, IDQ = 12 mA, f1 = 2170 MHz, f2 = 2170.1 MHz Two−Tone Measurement, 100 kHz Tone Spacing −20 VDD = 28 Vdc IDQ = 12 mA f1 = 2170 MHz f2 = f1 + Tone Spacing Two −Tone Measurement −25 −30 −35 1 MHz 10 MHz −40 −45 0.01 100 kHz 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 0.01 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 Figure 20. Intermodulation Distortion Products versus Output Power Figure 21. Third Order Intermodulation Distortion versus Output Power MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 9 f = 860 MHz Zload f = 900 MHz Z o = 50 Ω Zsource f =860 MHz f = 900 MHz VDD = 28 V, IDQ = 14 mA, Pout = 0.9 W PEP f MHz 860 865 870 875 880 885 890 895 900 Zsource Ω 27.853 + j5.908 28.617 + j6.078 29.458 + j6.285 30.306 + j6.422 31.223 + j6.567 32.194 + j6.660 33.228 + j6.656 34.293 + j6.624 35.424 + j6.508 Zload Ω 15.492 + j63.669 15.592 + j68.687 15.788 + j69.799 15.835 + j70.863 15.975 + j71.920 16.094 + j73.091 16.286 + j74.159 16.344 + j75.236 16.628 + j76.283 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 22. Series Equivalent Source and Load Impedance MW4IC001NR4 MW4IC001MR4 10 RF Device Data Freescale Semiconductor f = 1920 MHz Zload f = 2100 MHz f = 2000 MHz f = 2180 MHz Zload f = 2180 MHz f = 2100 MHz Zsource Z o = 50 Ω f = 2000 MHz f = 1920 MHz Zsource Z o = 50 Ω VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP f MHz 1920 1930 1940 1950 1960 1970 1980 1990 2000 Zsource Ω 4.238 + j15.142 4.322 + j15.362 4.490 + j15.466 4.605 + j15.711 4.752 + j15.904 4.905 + j16.050 5.071 + j16.236 5.262 + j16.446 5.487 + j16.632 Zload Ω 7.764 + j28.829 8.056 + j29.352 8.436 + j29.727 8.809 + j30.249 9.183 + j30.763 9.598 + j31.213 10.030 + j31.690 10.546 + j32.237 11.054 + j32.726 f MHz 2100 2110 2120 2130 2140 2150 2160 2170 2180 VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP Zsource Ω 2.667 + j12.903 2.671 + j13.070 2.664 + j13.224 2.694 + j13.431 2.703 + j13.511 2.702 + j13.700 2.745 + j13.952 2.754 + j14.026 2.784 + j14.206 Zload Ω 5.892 + j26.374 6.092 + j26.739 6.281 + j27.094 6.540 + j27.510 6.748 + j27.795 6.996 + j28.182 7.300 + j28.678 7.562 + j28.987 7.862 + j29.411 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Input Matching Network Device Under Test Output Matching Network Z source Z load Z source Z load Figure 23. Series Equivalent Source and Load Impedance MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 11 NOTES MW4IC001NR4 MW4IC001MR4 12 RF Device Data Freescale Semiconductor NOTES MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 13 NOTES MW4IC001NR4 MW4IC001MR4 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A F 3 B D 1 2 R L NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. 4 N K Q ZONE V 0.35 (0.89) X 45_" 5 _ U H 4 10_DRAFT P C Y Y E ZONE W 1 2 3 G S STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE ZONE X VIEW Y - Y CASE 466 - 03 ISSUE C PLD- 1.5 PLASTIC DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 RF Device Data Freescale Semiconductor ÉÉÉÉÉÉ ÉÉ ÉÉÉÉ ÉÉ ÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉ ÉÉÉÉ ÉÉÉÉÉÉ ÉÉ MW4IC001NR4 MW4IC001MR4 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2005. All rights reserved. MW4IC001NR4 MW4IC001MR4 Document Number: MW4IC001MR4 Rev. 3, 1/2005 16 RF Device Data Freescale Semiconductor