9C12063A10R0FKHFT

Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 23.1 23.1 22.8 ηD (%) 36.4 36.4 36.6 Output PAR (dB) 6.3 6.2 6.1 ACPR (dBc) --35.5 --36.1 --35.8 MRF8S9102NR3 865-960 MHz, 28 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW 880 MHz • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 865 MHz 880 MHz 895 MHz Gps (dB) 22.9 23.0 22.8 ηD (%) 35.4 35.5 35.6 Output PAR (dB) 6.4 6.2 6.0 ACPR (dBc) --34.7 --35.1 --35.7 CASE 2021-03, STYLE 1 OM-780-2 PLASTIC Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. © Freescale Semiconductor, Inc., 2011. All rights reserved. MRF8S9102NR3 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value --0.5, +70 --6.0, +10 32, +0 --65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 28 W CW, 28 Vdc, IDQ = 750 mA, 880 MHz Case Temperature 80°C, 100 W CW, 28 Vdc, IDQ = 750 mA, 880 MHz Symbol RθJC Value (2,3) 0.63 0.58 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 750 mAdc) Fixture Gate Quiescent Voltage (4) (VDD = 28 Vdc, ID = 750 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.7 Adc) VGS(th) VGS(Q) VGG(Q) VDS(on) 1.5 — 4.6 0.1 2.3 3.1 6.2 0.2 3.0 — 7.6 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. (continued) MRF8S9102NR3 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg., f = 920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 21.5 34.0 6.0 — — 23.1 36.4 6.3 --35.5 --14 24.0 — — --32.5 --9 dB % dB dBc dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz Pout @ 1 dB Compression Point, CW IMD Symmetry @ 82 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 28 W Avg. Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) Gps (dB) 23.1 23.1 22.8 P1dB IMDsym ηD (%) 36.4 36.4 36.6 — — Output PAR (dB) 6.3 6.2 6.1 100 20 ACPR (dBc) --35.5 --36.1 --35.8 — — IRL (dB) --14 --22 --17 W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, 920--960 MHz Bandwidth VBWres GF ∆G ∆P1dB — — — — 80 0.3 0.02 0.004 — — — — MHz dB dB/°C dB/°C Typical Broadband Performance — 880 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 865 MHz 880 MHz 895 MHz 1. Part internally matched both on input and output. Gps (dB) 22.9 23.0 22.8 ηD (%) 35.4 35.5 35.6 Output PAR (dB) 6.4 6.2 6.0 ACPR (dBc) --34.7 --35.1 --35.7 IRL (dB) --15 --23 --19 MRF8S9102NR3 RF Device Data Freescale Semiconductor 3 R1 R2 C3 C9 C10 C8 CUT OUT AREA R3 C12 C2 C4 C5 C14 C15 C16 C11 C6 C7 C13 C1 MRF8S9102N Rev. 0 Figure 1. MRF8S9102NR3 Test Circuit Component Layout Table 6. MRF8S9102NR3 Test Circuit Component Designations and Values Part C1, C2 C3, C4, C5, C6, C7 C8, C14, C15 C9, C12, C13, C16 C10 C11 R1, R2 R3 PCB Description 220 μF, 63 V Electrolytic Capacitors 10 μF, 50 V Chip Capacitors 3.0 pF Chip Capacitors 47 pF Chip Capacitors 4.3 pF Chip Capacitor 4.7 pF Chip Capacitor 1 KΩ, 1/8 W Chip Resistors 10 Ω, 1/4 W Chip Resistor 0.020″, εr = 3.5 Part Number 222212018221 C5750X5R1H106M ATC100B3R0BT500XT ATC100B470JT500XT ATC100B4R3BT500XT ATC100B4R7BT500XT WCR08051KFI 9C12063A10R0FKHFT RO4350 Manufacturer Vishay TDK ATC ATC ATC ATC Welwyn Yageo Rogers MRF8S9102NR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 750 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth ηD, DRAIN EFFICIENCY (%) 27 26 25 Gps, POWER GAIN (dB) 24 23 22 21 20 19 18 17 820 ACPR IRL 840 860 880 900 920 940 960 ηD Gps Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF PARC 40 38 36 34 32 --36 --36.5 ACPR (dBc) --37 --37.5 --38 --38.5 980 IRL, INPUT RETURN LOSS (dB) 0 --5 --10 --15 --20 --25 --0.5 --0.8 --1.1 --1.4 --1.7 --2 PARC (dB) f, FREQUENCY (MHz) Figure 2. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 28 Watts Avg. --10 --20 --30 --40 --50 --60 VDD = 28 Vdc, Pout = 82 W (PEP), IDQ = 750 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IM3--U IM3--L IM5--U IM5--L IM7--L 1 10 TWO--TONE SPACING (MHz) IM7--U 100 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Intermodulation Distortion Products versus Two-Tone Spacing 24 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 23.5 Gps, POWER GAIN (dB) 23 22.5 22 21.5 21 2 60 ηD ηD, DRAIN EFFICIENCY (%) 50 40 30 --1 dB = 25 W --2 dB = 35 W PARC 10 20 30 40 50 60 Gps --3 dB = 48 W 20 10 0 --20 --25 --30 --35 --40 --45 --50 ACPR (dBc) VDD = 28 Vdc, IDQ = 750 mA, f = 940 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal 1 PAR = 7.5 dB @ 0.01% Probability on CCDF 0 --1 --2 --3 --4 ACPR Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power MRF8S9102NR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 24 Gps 23 Gps, POWER GAIN (dB) 22 21 20 19 18 1 10 Pout, OUTPUT POWER (WATTS) AVG. 940 MHz 920 MHz 60 ηD 50 ηD, DRAIN EFFICIENCY (%) 40 30 ACPR 920 MHz 940 MHz 960 MHz 0 100 --60 20 10 --10 --20 --30 --40 --50 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6 0 960 MHz VDD = 28 Vdc, IDQ = 750 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 960 MHz 940 MHz 920 MHz Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 30 25 20 GAIN (dB) 15 10 5 0 600 VDD = 28 Vdc Pin = 0 dBm IDQ = 750 mA 700 800 900 IRL --20 --24 1400 Gain 0 --4 --8 --12 --16 IRL (dB) 3.84 MHz Channel BW 0 1000 1100 1200 1300 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 0.01 0.001 0.0001 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S9102NR3 6 Figure 8. Single-Carrier W-CDMA Spectrum RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource Ω 1.93 -- j3.20 2.05 -- j3.14 2.13 -- j3.13 2.17 -- j3.14 2.21 -- j3.14 2.23 -- j3.19 2.20 -- j3.24 2.14 -- j3.27 2.04 -- j3.29 Zload Ω 3.46 -- j1.73 3.48 -- j1.48 3.52 -- j1.26 3.58 -- j1.06 3.70 -- j0.87 3.86 -- j0.73 4.04 -- j0.63 4.26 -- j0.56 4.50 -- j0.56 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S9102NR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 750 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 57 56 Pout, OUTPUT POWER (dBm) 55 54 53 52 51 50 49 48 47 46 25 26 27 28 29 30 31 32 33 34 35 36 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 920 940 960 P1dB Watts 158 162 158 dBm 52.0 52.1 52.0 195 195 195 P3dB Watts dBm 52.9 52.9 52.9 920 MHz 960 MHz 940 MHz 940 MHz 960 MHz 920 MHz Actual Ideal Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource Ω 1.60 -- j2.77 2.03 -- j3.36 2.33 -- j3.55 Zload Ω 8.80 -- j0.18 9.34 + j1.58 8.42 + j3.05 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S9102NR3 8 RF Device Data Freescale Semiconductor R1 R2 C3 C9 C10 C8 C17 CUT OUT AREA R3 C13 C2 C4 C5 C14 C15 C16 C11 C6 C7 C12 C1 MRF8S9102N Rev. 0 Figure 11. MRF8S9102NR3 Test Circuit Component Layout — 865-895 MHz Table 7. MRF8S9102NR3 Test Circuit Component Designations and Values — 865-895 MHz Part C1, C2 C3, C4, C5, C6, C7 C8 C9, C12, C13, C16 C10, C11 C14, C15 C17 R1, R2 R3 PCB Description 220 μF, 63 V Electrolytic Capacitors 10 μF, 50 V Chip Capacitors 2.7 pF Chip Capacitor 47 pF Chip Capacitors 6.8 pF Chip Capacitors 3.9 pF Chip Capacitors 1.2 pF Chip Capacitor 1 KΩ, 1/8 W Chip Resistors 10 Ω, 1/4 W Chip Resistor 0.020″, εr = 3.5 Part Number 222212018221 C5750X5R1H106M ATC100B2R7BT500XT ATC100B470JT500XT ATC100B6R8BT500XT ATC100B3R9BT500XT ATC100B1R2BT500XT WCR08051KFI 9C12063A10R0FKHFT RO4350 Manufacturer Vishay TDK ATC ATC ATC ATC ATC Welwyn Yageo Rogers MRF8S9102NR3 RF Device Data Freescale Semiconductor 9 TYPICAL CHARACTERISTICS — 865-895 MHz VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 750 mA Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Gps ηD, DRAIN EFFICIENCY (%) 27 26 25 Gps, POWER GAIN (dB) 24 23 22 21 20 19 18 17 820 IRL 840 860 880 900 920 940 960 f, FREQUENCY (MHz) ACPR PARC ηD 40 38 36 34 32 --31 ACPR (dBc) --32 --33 --34 --35 --36 980 0 --5 --10 --15 --20 --25 IRL, INPUT RETURN LOSS (dB) 0 --0.5 --1 --1.5 --2 --2.5 PARC (dB) Figure 12. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 28 Watts Avg. 24 23 Gps, POWER GAIN (dB) 22 21 20 19 18 895 MHz 880 MHz 865 MHz 60 50 ηD, DRAIN EFFICIENCY (%) 40 30 ACPR 895 MHz 865 MHz 880 MHz 20 10 0 100 0 --10 --20 --30 --40 --50 --60 ACPR (dBc) Gps ηD VDD = 28 Vdc, IDQ = 750 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 895 MHz 880 MHz 865 MHz 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 13. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 30 25 20 GAIN (dB) 15 10 5 0 700 IRL VDD = 28 Vdc Pin = 0 dBm IDQ = 750 mA 750 800 850 900 950 1000 1050 Gain 0 --4 --8 --12 --16 --20 --24 1100 IRL (dB) f, FREQUENCY (MHz) Figure 14. Broadband Frequency Response MRF8S9102NR3 10 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource Ω 0.95 -- j1.97 1.02 -- j1.88 1.09 -- j1.83 1.10 -- j1.74 1.13 -- j1.74 1.18 -- j1.71 1.12 -- j1.75 1.06 -- j1.72 1.02 -- j1.71 Zload Ω 3.44 -- j2.01 3.44 -- j1.87 3.48 -- j1.73 3.53 -- j1.60 3.63 -- j1.65 3.73 -- j1.51 3.81 -- j1.55 3.88 -- j1.60 3.98 -- j1.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance — 865-895 MHz MRF8S9102NR3 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MRF8S9102NR3 12 RF Device Data Freescale Semiconductor MRF8S9102NR3 RF Device Data Freescale Semiconductor 13 MRF8S9102NR3 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Feb. 2011 • Initial Release of Data Sheet Description MRF8S9102NR3 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8S9102NR3 1Rev. 0, 2/2011 6 Document Number: MRF8S9102N RF Device Data Freescale Semiconductor