ATC100B8R2BT250XT

Freescale Semiconductor Technical Data Document Number: MW7IC2240N Rev. 0, 11/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA. Typical Performance • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 Watts Avg., Full Frequency Band (2110 - 2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 30 dB Power Added Efficiency — 14% ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW Output Power • Pout @ 1 dB Compression Point = 40 Watts CW • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 Watts CW Pout. Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 2110 - 2170 MHz, 4 W Avg., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC2240NR1 CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC2240GNR1 CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC2240NBR1 VDS1 RFin RFout/VDS2 GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 RFout/VDS2 VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation (1) 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2007. All rights reserved. MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDSS VGS VDD Tstg TC TJ Pin Value - 0.5, +65 - 0.5, +5 32, +0 - 65 to +150 150 225 20 Unit Vdc Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 4 W Avg. (Pout = 3.95 W Avg., Case Temperature = 68°C) Stage 1, 28 Vdc, IDQ1 = 90 mA Stage 2, 28 Vdc, IDQ2 = 420 mA 40 W Avg. (Pout = 39.4 W Avg., Case Temperature = 80°C) Stage 1, 28 Vdc, IDQ1 = 90 mA Stage 2, 28 Vdc, IDQ2 = 420 mA Symbol RθJC 3.9 1.3 Value (2,3) Unit °C/W 3.2 1.2 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. (continued) MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 2 RF Device Data Freescale Semiconductor Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Stage 1 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 90 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 90 mAdc, Measured in Functional Test) Stage 1 — Dynamic Characteristics (1) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 420 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 420 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Stage 2 — Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) 1. Part internally matched both on input and output. (continued) Crss Coss — — 0.67 205 — — pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 7 0.2 2 2.8 9.8 0.39 2.7 — 12.5 1.2 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Ciss — 50 — pF VGS(th) VGS(Q) VGG(Q) 1.2 — 9.5 2 2.9 13 2.7 — 16.5 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Power Added Efficiency Adjacent Channel Power Ratio Input Return Loss Gps PAE ACPR IRL 28 12 — — 30 14 - 50 - 16 33 — - 46 - 12 dB % dBc dB W MHz — 10 — Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, 2110 - 2170 MHz Pout @ 1 dB Compression Point, CW P1dB — 40 — Video Bandwidth @ 40 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz