ATC200B103KT50XT

Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 0, 6/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at 1300 MHz. These devices are suitable for use in pulsed and CW applications. • Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (200 μsec, 10% Duty Cycle) Pout (W) 250 Peak f (MHz) 1300 Gps (dB) 22.7 ηD (%) 57.0 IRL (dB) --18 MRF6V13250HR3 MRF6V13250HSR3 1300 MHz, 250 W, 50 V LATERAL N-CHANNEL RF POWER MOSFETs • Typical Performance: VDD = 50 Volts, IDQ = 10 mA, TC = 25°C Signal Type CW Pout (W) 230 CW f (MHz) 1300 Gps (dB) 21.0 ηD (%) 55.0 IRL (dB) --17 • Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz at all Phase Angles • 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec • CW Capable Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Characterized from 20 V to 50 V for Extended Power Range • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Total Device Dissipation @ TC = 25°C Derate above 25°C CASE 465-06, STYLE 1 NI-780 MRF6V13250HR3 CASE 465A-06, STYLE 1 NI-780S MRF6V13250HSR3 Symbol VDSS VGS Tstg TC TJ PD Value --0.5, +120 --6.0, +10 -- 65 to +150 150 225 476 2.38 Unit Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 100 mA, 1300 MHz CW: Case Temperature 77°C, 235 W CW, 50 Vdc, IDQ = 10 mA, 1300 MHz Symbol Value (2,3) Unit °C/W ZθJC RθJC 0.07 0.42 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2011. All rights reserved. MRF6V13250HR3 MRF6V13250HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) B (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 640 μAdc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.58 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 1.2 58 340 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1.0 2.0 0.1 1.8 2.4 0.25 2.7 3.0 0.3 Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS — 120 — — — — — — 1 — 10 20 μAdc Vdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz Pulsed, 200 μsec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss Power Gain Drain Efficiency Input Return Loss Gps ηD IRL Gps ηD IRL 21.5 53.5 — — — — 22.7 57.0 --18 21.0 55.0 --17 24.0 — --9 — — — dB % dB dB % dB Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 10 mA, Pout = 230 W CW, f = 1300 MHz, TC = 25°C Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle VSWR 10:1 at all Phase Angles 1. Part internally input matched. Ψ No Degradation in Output Power MRF6V13250HR3 MRF6V13250HSR3 2 RF Device Data Freescale Semiconductor VBIAS R1 + C1 + C2 C3 Z10 Z19 + C4 Z9 Z18 C7 C8 C9 C10 C11 C12 VSUPPLY RF INPUT Z11 Z1 C5 Z2 Z3 Z4 Z5 Z6 Z7 Z8 DUT Z12 Z13 Z14 Z15 Z16 C6 Z17 RF OUTPUT Z20 Z21 + C18 C17 C16 C15 C14 C13 VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9* Z10 0.447″ x 0.063″ Microstrip 0.030″ x 0.084″ Microstrip 0.120″ x 0.063″ Microstrip 0.855″ x 0.293″ Microstrip 0.369″ x 0.825″ Microstrip 0.203″ x 0.516″ Microstrip 0.105″ x 0.530″ Microstrip 0.105″ x 0.530″ Microstrip 0.116″ x 0.050″ Microstrip 0.122″ x 0.050″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18, Z20 Z19*, Z21* 0.162″ x 1.160″ Microstrip 0.419″ x 1.160″ Microstrip 0.468″ x 0.994″ Microstrip 0.131″ x 0.472″ Microstrip 0.264″ x 0.222″ Microstrip 0.500″ x 0.111″ Microstrip 0.291″ x 0.063″ Microstrip 0.105″ x 0.388″ Microstrip 0.854″ x 0.052″ Microstrip *Line length includes microstrip bends. Figure 1. MRF6V13250HR3(HSR3) Test Circuit Schematic — 1300 MHz Table 5. MRF6V13250HR3(HSR3) Test Circuit Component Designations and Values — 1300 MHz Part C1, C2 C3, C11, C14 C4, C6, C7, C18 C5 C8, C17 C9, C16 C10, C15 C12, C13 R1 PCB Description 22 μF, 35 V Tantalum Capacitors 0.1 μF, 50 V Chip Capacitors 100 pF Chip Capacitors 4.7 pF Chip Capacitor 1000 pF Chip Capacitors 1000 pF Chip Capacitors 10K pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 15 Ω, 1/4 W Chip Resistor 0.030″, εr = 3.50 Part Number T491X226K035AT CDR33BX104AKWS ATC800B101JT500XT ATC100B4R7CT500XT ATC100B102JT50XT ATC700B102FT50XT ATC200B103KT50XT MCGPR63V477M13X26--RH CRCW120615R0FKEA RO4350B Manufacturer Kemet AVX ATC ATC ATC ATC ATC Multicomp Vishay Rogers MRF6V13250HR3 MRF6V13250HSR3 RF Device Data Freescale Semiconductor 3 C3 C1 C2 C4 R1 C7 C9 C11 C8 C10 C12 CUT OUT AREA C5 C6 C18 C17 MRF6V13250H/HS Rev 3 C15 C13 C16 C14 Figure 2. MRF6V13250HR3(HSR3) Test Circuit Component Layout — 1300 MHz MRF6V13250HR3 MRF6V13250HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — PULSED 1000 Pout, OUTPUT POWER (dBm) PULSED 60 59 58 57 56 55 54 53 0 10 20 30 40 50 30 31 32 33 34 35 36 37 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm) PULSED VDD = 50 Vdc, IDQ = 100 mA, f = 1300 MHz Pulse Width = 200 μsec, Duty Cycle = 10% P3dB = 55.4 dBm (345 W) P2dB = 55.1 dBm (326 W) P1dB = 54.7 dBm (293 W) Actual Ideal Ciss C, CAPACITANCE (pF) 100 Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 1 10 Figure 3. Capacitance versus Drain-Source Voltage Figure 4. Pulsed Output Power versus Input Power 25 23 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 21 19 17 35 V 15 13 11 20 V 0 50 100 150 200 25 V 30 V IDQ = 100 mA, f = 1300 MHz Pulse Width = 200 μsec Duty Cycle = 10% 250 300 350 400 40 V 45 V VDD = 50 V 24 VDD = 50 Vdc, IDQ = 100 mA, f = 1300 MHz 23 Pulse Width = 200 μsec Duty Cycle = 10% 70 60 50 40 Gps, POWER GAIN (dB) 22 21 20 19 ηD 18 17 1 10 100 Pout, OUTPUT POWER (WATTS) PULSED Gps 30 20 10 0 500 Pout, OUTPUT POWER (WATTS) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power 70 60 ηD, DRAIN EFFICIENCY (%) 50 20 V 40 30 20 10 IDQ = 100 mA, f = 1300 MHz Pulse Width = 200 μsec Duty Cycle = 10% 0 50 100 150 200 250 300 350 400 25 V 35 V 40 V 45 V VDD = 50 V Gps, POWER GAIN (dB) 24 23 22 21 20 19 18 17 3 TC = --30_C 25_C Figure 6. Pulsed Power Gain versus Output Power 70 60 50 85_C 40 30 ηD 25_C 20 10 85_C 10 100 Pout, OUTPUT POWER (WATTS) PULSED 0 500 ηD, DRAIN EFFICIENCY (%) 30 V VDD = 50 Vdc IDQ = 100 mA f = 1300 MHz Pulse Width = 200 μsec Duty Cycle = 10% --30_C Gps Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Efficiency versus Output Power Figure 8. Pulsed Power Gain and Drain Efficiency versus Output Power MRF6V13250HR3 MRF6V13250HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — CW 24 23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 15 14 10 100 Pout, OUTPUT POWER (WATTS) CW Gps ηD VDD = 50 Vdc IDQ = 10 mA f = 1300 MHz TC = 25°C 60 55 45 40 35 30 25 20 15 10 400 ηD, DRAIN EFFICIENCY (%) 50 Figure 9. CW Power Gain and Drain Efficiency versus Output Power 25 24 Gps, POWER GAIN (dB) 500 mA 350 mA ηD, DRAIN EFFICIENCY (%) 23 22 21 20 19 18 17 16 10 100 Pout, OUTPUT POWER (WATTS) CW 100 mA VDD = 50 Vdc f = 1300 MHz TC = 25°C 400 IDQ = 700 mA 60 55 50 45 40 35 30 25 20 15 10 10 100 Pout, OUTPUT POWER (WATTS) CW VDD = 50 Vdc f = 1300 MHz TC = 25°C 400 350 mA 10 mA 100 mA 500 mA IDQ = 700 mA 10 mA Figure 10. CW Power Gain versus Output Power 109 108 MTTF (HOURS) 107 106 105 104 90 110 130 150 170 190 Figure 11. CW Efficiency versus Output Power 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 230 W CW, and ηD = 55%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature — CW MRF6V13250HR3 MRF6V13250HSR3 6 RF Device Data Freescale Semiconductor Zo = 10 Ω Zsource Zload f = 1300 MHz f = 1300 MHz VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak f MHz 1300 Zsource Ω 5.32 + j4.11 Zload Ω 1.17 + j1.48 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance — Pulsed MRF6V13250HR3 MRF6V13250HSR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6V13250HR3 MRF6V13250HSR3 8 RF Device Data Freescale Semiconductor MRF6V13250HR3 MRF6V13250HSR3 RF Device Data Freescale Semiconductor 9 MRF6V13250HR3 MRF6V13250HSR3 10 RF Device Data Freescale Semiconductor MRF6V13250HR3 MRF6V13250HSR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF6V13250H and MRF6V13250HS parts will be available for 2 years after release of MRF6V13250H and MRF6V13250HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF6V13250H and MRF6V13250HS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date June 2011 • Initial Release of Data Sheet Description MRF6V13250HR3 MRF6V13250HSR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF6V13250HR3 MRF6V13250HSR3 Document Number: RF Device Data MRF6V13250H Rev. 0, 6/2011 Freescale Semiconductor 13