GJM1555C1HR80BB01D

Freescale Semiconductor Technical Data Document Number: MMG15241H Rev. 0, 12/2010 Enhancement Mode pHEMT Technology (E-pHEMT) High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT -- 89 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 500 to 2800 MHz frequency range. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain. Features • Frequency: 500--2800 MHz • Noise Figure: 1.6 dB @ 2140 MHz • P1dB: 24 dBm @ 2140 MHz • Small--Signal Gain: 15.9 dB @ 2140 MHz • Third Order Output Intercept Point: 39.4 dBm @ 2140 MHz • Single 5 Volt Supply • Supply Current: 85 mA • 50 Ohm Operation (some external matching required) • Low Cost SOT--89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. Table 1. Typical Performance (1) Characteristic Noise Figure Input Return Loss (S11) Output Return Loss (S22) Small--Signal Gain (S21) Power Output @ 1dB Compression Third Order Input Intercept Point Third Order Output Intercept Point Symbol NF IRL ORL Gp P1db IIP3 OIP3 900 MHz 1.2 --11.8 --13.4 20.5 24 18.2 38.7 2140 MHz 1.6 --21.3 --16.2 15.9 24 23.5 39.4 2600 MHz 1.3 --16.9 --20.9 14.4 24 26.2 40.6 Unit dB dB dB dB dBm dBm dBm MMG15241HT1 500-2800 MHz, 15.9 dB 24 dBm E-pHEMT CASE 2142-01 SOT-89A PLASTIC Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VDD IDD Pin Tstg TJ Value 6 130 13 --65 to +150 150 Unit V mA dBm °C °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VDD = 5 Vdc, TA = 25°C, 50 ohm system, application circuit tuned for specified frequency. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 85°C, 5 Vdc, 84 mA, no RF applied Symbol RθJC Value (3) 59 Unit °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. MMG15241HT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA = 25°C, 50 ohm system, in Freescale Application Circuit) Characteristic Small--Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Input Intercept Point Third Order Output Intercept Point Reverse Isolation (S12) Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IIP3 OIP3 |S12| NF IDD VDD Min 14 — — — — — — — 65 — Typ 15.9 --21.3 --16.2 24 23.5 39.4 --22.5 1.6 85 5 Max — — — — — — — — 105 — Unit dB dB dB dBm dBm dBm dB dB mA V 1. For reliable operation, the junction temperature should not exceed 150°C. Table 5. Functional Pin Description Pin Number 1 2 3 RFin Ground RFout/DC Supply 1 2 3 Pin Function 2 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101) Class 2 (Minimum) B (Minimum) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 1 Package Peak Temperature 260 Unit °C MMG15241HT1 2 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS 25 Gp, SMALL--SIGNAL GAIN (dB) TC = 25°C 21 --40°C 17 85°C S11, S22 (dB) --10 S22 --20 VDD = 5 Vdc 0 0.5 1 1.5 2 2.5 3 VDD = 5 Vdc 0 0.5 1 1.5 2 2.5 3 0 S11 10 13 9 --30 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 2. Small-Signal Gain (S21) versus Frequency(1) Figure 3. Input/Output Return Loss versus Frequency(1) 1. Test fixture characteristics have been mathematically removed from the graphical data. MMG15241HT1 RF Device Data Freescale Semiconductor 3 50 OHM APPLICATION CIRCUIT: 2140 MHz VSUPPLY C5 Z4 C4 RF INPUT C2 C1 Z1 Z2 Z3 DUT Z5 Z6 L1 Z7 C3 C6 RF OUTPUT Z1 Z2 Z3 Z4 0.026″ x 0.021″ Microstrip 0.168″ x 0.021″ Microstrip 0.030″ x 0.044″ Microstrip 0.200″ x 0.042″ Microstrip Z5 Z6 Z7 0.030″ x 0.044″ Microstrip 0.172″ x 0.021″ Microstrip 0.353″ x 0.021″ Microstrip Figure 4. MMG15241HT1 Test Circuit Schematic Table 8. MMG15241HT1 Test Circuit Component Designations and Values Part C1 C2 C3 C4 C5 C6 L1 PCB Description 1.5 pF Chip Capacitor 0.8 pF Chip Capacitor 0.7 pF Chip Capacitor 56 pF Chip Capacitor 0.1 μF Chip Capacitor 5.6 pF Chip Capacitor 30 nH Chip Inductor 0.010″, εr = 3.38, Multilayer Part Number GJM1555C1H1R5CB01D GJM1555C1HR80BB01D GJM1555C1HR70BB01D GRM188RC1H560GA01D GRM188R71H104KA93D GJM1555C1H5R6DB01D 0603CS--30NXJLW IS680--338 Manufacturer Murata Murata Murata Murata Murata Murata Coilcraft Isola MMG15241HT1 4 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2140 MHz RFIN RFOUT C1 C6 C2 C3 L1 C4 C5 SOT--89--3B Rev. 0 VDD Figure 5. MMG15241HT1 Test Circuit Component Layout Table 8. MMG15241HT1 Test Circuit Component Designations and Values Part C1 C2 C3 C4 C5 C6 L1 PCB Description 1.5 pF Chip Capacitor 0.8 pF Chip Capacitor 0.7 pF Chip Capacitor 56 pF Chip Capacitor 0.1 μF Chip Capacitor 5.6 pF Chip Capacitor 30 nH Chip Inductor 0.010″, εr = 3.38, Multilayer Part Number GJM1555C1H1R5CB01D GJM1555C1HR80BB01D GJM1555C1HR70BB01D GRM188RC1H560GA01D GRM188R71H104KA93D GJM1555C1H5R6DB01D 0603CS--30NXJLW IS680--338 Manufacturer Murata Murata Murata Murata Murata Murata Coilcraft Isola (Component Designations and Values table repeated for reference.) MMG15241HT1 RF Device Data Freescale Semiconductor 5 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz 17 TC = --40°C Gp, SMALL--SIGNAL GAIN (dB) 16 25°C 15 85°C IRL, INPUT RETURN LOSS (dB) --12 TC = --40°C --8 --16 25°C 14 VDD = 5 Vdc 13 2000 2075 2150 f, FREQUENCY (MHz) 2225 2300 --20 85°C --24 2000 2075 2150 f, FREQUENCY (MHz) VDD = 5 Vdc 2225 2300 Figure 6. Small-Signal Gain (S21) versus Frequency --5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 25 Figure 7. Input Return Loss (S11) versus Frequency --10 TC = --40°C --15 85°C --20 VDD = 5 Vdc --25 2000 2075 2150 f, FREQUENCY (MHz) 25°C 24 TC = --40°C 23 25°C 85°C 22 VDD = 5 Vdc 21 2040 2090 2140 f, FREQUENCY (MHz) 2190 2240 2225 2300 Figure 8. Output Return Loss (S22) versus Frequency OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 41 TC = 25°C NF, NOISE FIGURE (dB) 85°C 39 --40°C 38 VDD = 5 Vdc 37 2040 2090 2140 f, FREQUENCY (MHz) 2190 2240 0.8 2000 2.4 Figure 9. P1dB versus Frequency 40 2 TC = 85°C 1.6 25°C 1.2 --40°C 2075 2150 f, FREQUENCY (MHz) 2225 VDD = 5 Vdc 2300 Figure 10. Third Order Output Intercept Point versus Frequency Figure 11. Noise Figure versus Frequency MMG15241HT1 6 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz ACPR, ADJACENT CHANNEL POWER RATIO (dBc) --15 --25 VDD = 5 Vdc, f = 2140 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --35 TC = 85°C --45 25°C --40°C --55 14 16.5 19 21.5 24 Pout, OUTPUT POWER (dBm) Figure 12. Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power MMG15241HT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 900 MHz VSUPPLY R1 C3 L1 RF INPUT C1 Z1 L2 Z2 DUT Z3 C2 Z4 C5 RF OUTPUT C4 Z1 Z2 0.041″ x 0.058″ Microstrip 0.112″ x 0.058″ Microstrip Z3 Z4 0.090″ x 0.058″ Microstrip 0.085″ x 0.058″ Microstrip Figure 13. MMG15241HT1 Test Circuit Schematic Table 9. MMG15241HT1 Test Circuit Component Designations and Values Part C1 C2 C3, C5 C4 L1 L2 R1 PCB Description 3.9 pF Chip Capacitor 0.6 pF Chip Capacitor 56 pF Chip Capacitors 0.1 μF Chip Capacitor 30 nH Chip Inductor 6.8 nH Chip Inductor 0 Ω, 1 A Chip Resistor 0.031″, εr = 4.1 Part Number GQM1885C2A3R9CB01 GQM1885C2AR60CB01 GRM188RC1H560GA01D GRM188R71H104KA93D 0603CS--30NXJLW 0603CS--6N8XJLW ERJ3GEY0R00V Getek Grade ML200C Manufacturer Murata Murata Murata Murata Coilcraft Coilcraft Panasonic GE Electromaterials R1 C4 C3 L2 L1 C5 C1 C2 SOT--89--3A Rev. 0 Figure 14. MMG15241HT1 Test Circuit Component Layout MMG15241HT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 900 MHz 22 Gp, SMALL--SIGNAL GAIN (dB) --3 21 IRL, INPUT RETURN LOSS (dB) --6 20 --9 19 VDD = 5 Vdc 18 750 825 900 f, FREQUENCY (MHz) 975 1050 --12 VDD = 5 Vdc --15 750 825 900 f, FREQUENCY (MHz) 975 1050 Figure 15. Small-Signal Gain (S21) versus Frequency --8 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 26 Figure 16. Input Return Loss (S11) versus Frequency --12 25 --16 24 --20 VDD = 5 Vdc --24 750 825 900 f, FREQUENCY (MHz) 975 1050 23 VDD = 5 Vdc 22 800 850 900 f, FREQUENCY (MHz) 950 1000 Figure 17. Output Return Loss (S22) versus Frequency OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 40 2 Figure 18. P1dB versus Frequency NF, NOISE FIGURE (dB) VDD = 5 Vdc 39 1.5 38 1 37 0.5 VDD = 5 Vdc 0 750 825 900 f, FREQUENCY (MHz) 975 1050 36 800 850 900 f, FREQUENCY (MHz) 950 1000 Figure 19. Third Order Output Intercept Point versus Frequency Figure 20. Noise Figure versus Frequency MMG15241HT1 RF Device Data Freescale Semiconductor 9 50 OHM APPLICATION CIRCUIT: 2600 MHz VSUPPLY C5 Z3 C4 RF INPUT C1 Z1 Z2 DUT Z4 Z5 L1 Z6 C3 Z7 C2 C6 RF OUTPUT Z1 Z2 Z3 Z4 0.149″ x 0.021″ Microstrip 0.030″ x 0.044″ Microstrip 0.200″ x 0.042″ Microstrip 0.030″ x 0.044″ Microstrip Z5 Z6 Z7 0.166″ x 0.021″ Microstrip 0.088″ x 0.021″ Microstrip 0.215″ x 0.021″ Microstrip Figure 21. MMG15241HT1 Test Circuit Schematic Table 10. MMG15241HT1 Test Circuit Component Designations and Values Part C1 C2 C3 C4 C5 C6 L1 PCB Description 1.0 pF Chip Capacitor 0.4 pF Chip Capacitor 0.2 pF Chip Capacitor 56 pF Chip Capacitor 0.1 μF Chip Capacitor 10 pF Chip Capacitor 30 nH Chip Inductor 0.010″, εr = 3.38, Multilayer Part Number GJM1555C1H1R0CB01D GJM1555C1HR40BB01D GJM1555C1HR20BB01D GRM188RC1H560GA01D GRM188R71H104KA93D GJM1555C1H100JB01D 0603CS--30NXJLW IS680--338 Manufacturer Murata Murata Murata Murata Murata Murata Coilcraft Isola MMG15241HT1 10 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2600 MHz RFIN RFOUT C1 C2 C6 C3 L1 C4 C5 SOT--89--3B Rev. 0 VDD Figure 22. MMG15241HT1 Test Circuit Component Layout Table 10. MMG15241HT1 Test Circuit Component Designations and Values Part C1 C2 C3 C4 C5 C6 L1 PCB Description 1.0 pF Chip Capacitor 0.4 pF Chip Capacitor 0.2 pF Chip Capacitor 56 pF Chip Capacitor 0.1 μF Chip Capacitor 10 pF Chip Capacitor 30 nH Chip Inductor 0.010″, εr = 3.38, Multilayer Part Number GJM1555C1H1R0CB01D GJM1555C1HR40BB01D GJM1555C1HR20BB01D GRM188RC1H560GA01D GRM188R71H104KA93D GJM1555C1H100JB01D 0603CS--30NXJLW IS680--338 Manufacturer Murata Murata Murata Murata Murata Murata Coilcraft Isola (Component Designations and Values table repeated for reference.) MMG15241HT1 RF Device Data Freescale Semiconductor 11 50 OHM TYPICAL CHARACTERISTICS: 2600 MHz 15 Gp, SMALL--SIGNAL GAIN (dB) --10 14.5 IRL, INPUT RETURN LOSS (dB) --12 14 --14 13.5 VDD = 5 Vdc 13 2450 2525 2600 f, FREQUENCY (MHz) 2675 2750 --16 VDD = 5 Vdc --18 2450 2525 2600 f, FREQUENCY (MHz) 2675 2750 Figure 23. Small-Signal Gain (S21) versus Frequency --16 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 25 Figure 24. Input Return Loss (S11) versus Frequency --18 24.25 --20 23.5 --22 VDD = 5 Vdc --24 2450 2525 2600 f, FREQUENCY (MHz) 2675 2750 22.75 VDD = 5 Vdc 22 2500 2550 2600 f, FREQUENCY (MHz) 2650 2700 Figure 25. Output Return Loss (S22) versus Frequency OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 42 2 Figure 26. P1dB versus Frequency NF, NOISE FIGURE (dB) VDD = 5 Vdc 40.5 1.75 39 1.5 37.5 1.25 VDD = 5 Vdc 36 2500 2550 2600 f, FREQUENCY (MHz) 2650 2700 1 2450 2525 2600 f, FREQUENCY (MHz) 2675 2750 Figure 27. Third Order Output Intercept Point versus Frequency Figure 28. Noise Figure versus Frequency MMG15241HT1 12 RF Device Data Freescale Semiconductor 1.90 3.00 2X 45° 4.35 2X 1.25 0.85 2X 1.50 3X 0.70 Figure 29. PCB Pad Layout for SOT-89A MG241H YYWW Figure 30. Product Marking MMG15241HT1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MMG15241HT1 14 RF Device Data Freescale Semiconductor MMG15241HT1 RF Device Data Freescale Semiconductor 15 MMG15241HT1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time failure analysis is limited to electrical signature analysis. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Dec. 2010 • Initial Release of Data Sheet Description MMG15241HT1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MMG15241HT1 1Rev. 0, 12/2010 8 Document Number: MMG15241H RF Device Data Freescale Semiconductor