MC9RS08KB8CWJ574

Freescale Semiconductor Addendum Document Number: QFN_Addendum Rev. 0, 07/2014 Addendum for New QFN Package Migration This addendum provides the changes to the 98A case outline numbers for products covered in this book. Case outlines were changed because of the migration from gold wire to copper wire in some packages. See the table below for the old (gold wire) package versus the new (copper wire) package. To view the new drawing, go to Freescale.com and search on the new 98A package number for your device. For more information about QFN package use, see EB806: Electrical Connection Recommendations for the Exposed Pad on QFN and DFN Packages. © Freescale Semiconductor, Inc., 2014. All rights reserved. Part Number MC68HC908JW32 Package Description Original (gold wire) Current (copper wire) package document number package document number 48 QFN 98ARH99048A 98ASA00466D MC9RS08LA8 48 QFN 98ARL10606D 98ASA00466D MC9S08GT16A 32 QFN 98ARH99035A 98ASA00473D MC9S908QE32 32 QFN 98ARE10566D 98ASA00473D MC9S908QE8 32 QFN 98ASA00071D 98ASA00736D MC9S08JS16 24 QFN 98ARL10608D 98ASA00734D MC9S08QG8 24 QFN 98ARL10605D 98ASA00474D MC9S08SH8 24 QFN 98ARE10714D 98ASA00474D MC9RS08KB12 24 QFN 98ASA00087D 98ASA00602D MC9S08QG8 16 QFN 98ARE10614D 98ASA00671D MC9RS08KB12 8 DFN 98ARL10557D 98ASA00672D 6 DFN 98ARL10602D 98ASA00735D MC9S08AC16 MC9S908AC60 MC9S08AC128 MC9S08AW60 MC9S08GB60A MC9S08GT16A MC9S08JM16 MC9S08JM60 MC9S08LL16 MC9S08QE128 MC9S08QE32 MC9S08RG60 MCF51CN128 MC9S08QB8 MC9S08QG8 MC9RS08KA2 Addendum for New QFN Package Migration, Rev. 0 2 Freescale Semiconductor Freescale Semiconductor Data Sheet: Technical Data Document Number: MC9RS08KB12 Rev. 5, 1/2012 MC9RS08KB12 MC9RS08KB12 Series Covers:MC9RS08KB12 MC9RS08KB8 MC9RS08KB4 MC9RS08KB2 • 8-Bit RS08 Central Processor Unit (CPU) – Up to 20 MHz CPU at 1.8 V to 5.5 V across temperature range of –40 °C to 85 °C – Subset of HC08 instruction set with added BGND instruction – Single Global interrupt vector • On-Chip Memory – Up to 12 KB flash read/program/erase over full operating voltage and temperature, 12 KB/8 KB/4 KB/2 KB flash are optional – Up to 254-byte random-access memory (RAM), 254-byte/126-byte RAM are optional – Security circuitry to prevent unauthorized access to flash contents • Power-Saving Modes – Wait mode — CPU shuts down; system clocks continue to run; full voltage regulation – Stop mode — CPU shuts down; system clocks are stopped; voltage regulator in standby – Wakeup from power-saving modes using RTI, KBI, ADC, ACMP, SCI and LVD • Clock Source Options – Oscillator (XOSC) — Loop-control Pierce oscillator; crystal or ceramic resonator range of 31.25 kHz to 39.0625 kHz or 1 MHz to 16 MHz – Internal Clock Source (ICS) — Internal clock source module containing a frequency-locked-loop (FLL) controlled by internal or external reference; precision trimming of internal reference allows 0.2% resolution and 2% deviation over temperature and voltage; supporting bus frequencies up to 10 MHz • System Protection – Watchdog computer operating properly (COP) reset with option to run from dedicated 1 kHz internal low power oscillator – Low-voltage detection with reset or interrupt – Illegal opcode detection with reset – Illegal address detection with reset – Flash-block protection 20-Pin SOIC Case 751D 24-Pin QFN Case 1982-01 16-Pin TSSOP Case 948F 16-Pin SOIC N/B Case 751B 8-Pin DFN Case 1452-02 • Development Support – Single-wire background debug interface – Breakpoint capability to allow single breakpoint setting during in-circuit debugging • Peripherals – ADC — 12-channel, 10-bit resolution; 2.5 μs conversion time; automatic compare function; 1.7 mV/°C temperature sensor; internal bandgap reference channel; operation in stop; hardware trigger – ACMP — Analog comparator; full rail-to-rail supply operation; option to compare to fixed internal bandgap reference voltage; can operate in stop mode – TPM — One 2-channel timer/pulse-width modulator module; selectable input capture, output compare, or buffered edge- or center-aligned PWM on each channel – IIC — Inter-integrated circuit bus module capable of operation up to 100 kbps with maximum bus loading; capable of higher baud rates with reduced loading – SCI — One serial communications interface module with optional 13-bit break; LIN extensions – MTIM — Two 8-bit modulo timers; optional clock sources – RTI — One real-time clock with optional clock sources – KBI — Keyboard interrupts; up to 8 ports • Input/Output – 18 GPIOs in 24- and 20-pin packages; 14 GPIOs in 16-pin package; 6 GPIOs in 8-pin package; including one output-only pin and one input-only pin – Hysteresis and configurable pullup device on all input pins; configurable slew rate and drive strength on all output pins • Package Options – MC9RS08KB12/MC9RS08KB8/MC9RS08KB4 — 24-pin QFN, 20-pin SOIC, 16-pin SOIC NB or TSSOP – MC9RS08KB2 — 8-pin SOIC or DFN This document contains information on a product under development. Freescale reserves the right to change or discontinue this product without notice. © Freescale Semiconductor, Inc., 2008-2012. All rights reserved. 8-Pin SOIC Case 751 Table of Contents 1 2 3 MCU Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin Assignments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.2 Parameter Classification. . . . . . . . . . . . . . . . . . . . . . . . . 6 3.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . 7 3.4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.5 ESD Protection and Latch-Up Immunity. . . . . . . . . . . . . 8 3.6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.7 Supply Current Characteristics. . . . . . . . . . . . . . . . . . . 23 3.8 External Oscillator (XOSC) Characteristics . . . . . . . . . 26 3.9 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 4 5 3.9.1 Control Timing . . . . . . . . . . . . . . . . . . . . . . . . . .27 3.9.2 TPM/MTIM Module Timing . . . . . . . . . . . . . . . .28 3.10 Analog Comparator (ACMP) Electrical . . . . . . . . . . . . .28 3.11 Internal Clock Source Characteristics. . . . . . . . . . . . . .29 3.12 ADC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .29 3.13 Flash Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . .33 3.14 EMC Performance. . . . . . . . . . . . . . . . . . . . . . . . . . . . .35 3.14.1 Radiated Emissions . . . . . . . . . . . . . . . . . . . . . .35 Ordering Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 Mechanical Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 Revision History To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information available, refer to: http://freescale.com/ The following revision history table summarizes changes contained in this document. Revision Date Description of Changes 1 4/13/2009 Updated on shared review comments, added package information. 2 5/22/2009 Completed most of the TBDs, corrected the block diagram. 3 8/31/2009 Completed all the TBDs. Changed VLVD and added RPD in the Table 7. Changed SIDD, ADC adder from stop, RTI adder from stop with 1 kHz clock source enabled and LVI adder from stop at 5 V in the Table 8. 4 6/23/2011 Split the 10-Bit ADC Characteristics to Table 15 and Table 16 for the VDDAD ranges. Corrected the note 4 in the Table 8. 5 1/30/2012 Added 24-pin QFN package. Related Documentation Find the most current versions of all documents at: http://www.freescale.com Reference Manual (MC9RS08KB12RM) Contains extensive product information including modes of operation, memory, resets and interrupts, register definition, port pins, CPU, and all module information. MC9RS08KB12 Series MCU Data Sheet, Rev. 5 2 Freescale Semiconductor MCU Block Diagram 1 MCU Block Diagram The block diagram, Figure 1, shows the structure of the MC9RS08KB12 MCU. VREFH VREFL VDDAD VSSAD 12-CH 10-BIT ANALOG-TO-DIGITAL CONVERTER(ADC) ANALOG COMPARATOR (ACMP) ADP[3:0] ADP[7:4] ADP[11:8] ACMP+ ACMPACMPO RS08 CORE 8-BIT KEYBOARD RESET INTERRUPT(KBI) BDC CPU SERIAL COMMUNICATION INTERFACE (SCI) RS08 SYSTEM CONTROL RESETS AND INTERRUPTS MODES OF OPERATION POWER MANAGEMENT COP RTI WAKEUP LVD KBIP[3:0] KBIP[7:4] 2-CH TIMER/PWM MODULE (TPM) MODULO TIMER PTA0/KBIP0/TPMCH0/ADP0/ACMP+ PTA1/KBIP1/TPMCH1/ADP1/ACMP– PORT A VDD VSS TxD RxD PTA2/KBIP2/SDA/RxD/ADP2 PTA3/KBIP3/SCL/TxD/ADP3 PTA4/ACMPO/BKGD/MS2 PTA5/TCLK/RESET/VPP1 TPMCH0 TPMCH1 TCLK TCLK PTB0/KBIP4/RxD/ADP4 (MTIM1) PTB1/KBIP5/TxD/ADP5 USER FLASH MC9RS08KB12 = 12 KB MC9RS08KB8 = 8 KB MC9RS08KB4 = 4 KB MC9RS08KB2 = 2 KB MODULO TIMER (MTIM2) INTER-INTEGRATED USER RAM MC9RS08KB12/KB8 = 254 BYTES MC9RS08KB4/KB2 = 126 BYTES CIRCUIT MODULE (IIC) TCLK SCL SDA PTB2/KBIP6/ADP6 PORT B VPP PTB3/KBIP7/ADP7 PTB4/TPMCH0 PTB5/TPMCH1 PTB6/SDA/XTAL PTB7/SCL/EXTAL XTAL 20 MHz INTERNAL CLOCK SOURCE (ICS) EXTAL PTC0/ADP8 PORT C LOW-POWER OSCILLATOR 31.25 kHz to 39.0625 kHz 1 MHz to 16 MHz (XOSC) VDD VSS PTC1/ADP9 PTC2/ADP10 PTC3/ADP11 VOLTAGE REGULATOR NOTES: 1. PTA5/TCLK/RESET/VPP is an input-only pin when used as port pin 2. PTA4/ACMPO/BKGD/MS is an output-only pin when used as port pin Figure 1. MC9RS08KB12 Series Block Diagram 2 Pin Assignments This section shows the pin assignments in the packages available for the MC9RS08KB12 series. MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 3 Pin Assignments Table 1. Pin Availability by Package Pin-Count Pin Number Highest Alt 2 Alt 3 Alt 4 VDD NC VSS 1 4 5 5 — PTB7 SCL 5 6 6 — PTB6 SDA1 EXTAL XTAL 2 6 7 7 — PTB5 TPMCH1 7 8 8 — PTB4 TPMCH02 8 9 — — PTC3 ADP11 9 10 — — PTC2 ADP10 10 11 — — PTC1 ADP9 11 12 — — PTC0 ADP8 12 13 9 — PTB3 KBIP7 13 14 10 — PTB2 KBIP6 ADP7 ADP6 14 15 11 — PTB1 KBIP5 TxD3 15 16 12 — PTB0 KBIP4 RxD3 ADP4 TxD3 ADP3 ADP5 16 17 13 5 PTA3 KBIP3 SCL1 17 18 14 6 PTA2 KBIP2 SDA1 RxD3 ADP2 ADP1 ACMP– 18 19 15 7 PTA1 KBIP1 TPMCH12 19 20 16 8 PTA0 KBIP0 TPMCH02 ADP0 ACMP+ 20 — — — NC 21 — — — NC 22 — — — NC 23 1 1 1 PTA5 TCLK RESET VPP 24 2 2 2 PTA4 BKGD MS ACMPO 1 IIC pins can be remapped to PTB6 and PTB7, default reset location is PTA2 and PTA3. It can be configured only once. 2 TPM pins can be remapped to PTB4 and PTB5, default reset location is PTA0 and PTA1. 3 SCI pins can be remapped to PTA2 and PTA3, default reset location is PTB0 and PTB1. It can be configured only once. MC9RS08KB12 Series MCU Data Sheet, Rev. 5 4 Freescale Semiconductor VDD PTA0/KBIP0/TPMCH0/ADP0/ACMP+ NC NC NC Pin 1 indicator PTA5/TCLK/RESET/Vpp PTA4/ACMPO/BKGD/MS Pin Assignments 24 23 22 21 20 19 18 PTA1/KBIP1/TPMCH1/ADP1/ACMP– 17 PTA2/KBIP2/SDA/RxD/ADP2 3 16 PTA3/KBIP3/SCL/TxD/ADP3 PTB7/SCL/EXTAL 4 15 PTB0/KBIP4/RxD/ADP4 PTB6/SDA/XTAL 5 14 PTB1/KBIP5/TxD/ADP5 PTB5/TPMCH1 6 13 PTB2/KBIP6/ADP6 10 11 12 PTB3/KBIP7/ADP7 9 PTC0/ADP8 PTC3/ADP11 PTB4/TPMCH0 7 8 PTC1/ADP9 VSS PTC2/ADP10 NC 1 2 Figure 2. MC9RS08KB12 Series 24-Pin QFN Package PTA5/TCLK/RESET/VPP 1 20 PTA0/KBIP0/TPMCH0/ADP0/ACMP+ PTA4/ACMPO/BKGD/MS 2 19 PTA1/KBIP1/TPMCH1/ADP1/ACMP– VDD 3 18 PTA2/KBIP2/SDA/RxD/ADP2 VSS 4 17 PTA3/KBIP3/SCL/TxD/ADP3 PTB7/SCL/EXTAL 5 16 PTB0/KBIP4/RxD/ADP4 PTB6/SDA/XTAL 6 15 PTB1/KBIP5/TxD/ADP5 PTB5/TPMCH1 7 14 PTB2/KBIP6/ADP6 PTB4/TPMCH0 8 13 PTB3/KBIP7/ADP7 PTC3/ADP11 9 12 PTC0/ADP8 PTC2/ADP10 10 11 PTC1/ADP9 Figure 3. MC9RS08KB12 Series 20-Pin SOIC Package MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 5 Electrical Characteristics PTA5/TCLK/RESET/VPP 1 16 PTA0/KBIP0/TPMCH0/ADP0/ACMP+ PTA4/ACMPO/BKGD/MS 2 15 PTA1/KBIP1/TPMCH1/ADP1/ACMP– VDD 3 14 PTA2/KBIP2/SDA/RxD/ADP2 VSS 4 13 PTA3/KBIP3/SCL/TxD/ADP3 PTB7/SCL/EXTAL 5 12 PTB0/KBIP4/RxD/ADP4 PTB6/SDA/XTAL 6 11 PTB1/KBIP5/TxD/ADP5 PTB5/TPMCH1 7 10 PTB2/KBIP6/ADP6 PTB4/TPMCH0 8 9 PTB3/KBIP7/ADP7 Figure 4. MC9RS08KB12 Series 16-Pin SOIC NB/TSSOP Package PTA5/TCLK/RESET/VPP 1 8 PTA0/KBIP0/TPMCH0/ADP0/ACMP+ PTA4/ACMPO/BKGD/MS 2 7 PTA1/KBIP1/TPMCH1/ADP1/ACMP– VDD 3 6 PTA2/KBIP2/SDA/RxD/ADP2 VSS 4 5 PTA3/KBIP3/SCL/TxD/ADP3 Figure 5. MC9RS08KB12 Series 8-Pin SOIC/DFN Package 3 Electrical Characteristics 3.1 Introduction This chapter contains electrical and timing specifications for the MC9RS08KB12 series of microcontrollers available at the time of publication. 3.2 Parameter Classification The electrical parameters shown in this supplement are guaranteed by various methods. To give the customer a better understanding the following classification is used and the parameters are tagged accordingly in the tables where appropriate: Table 2. Parameter Classifications P Those parameters are guaranteed during production testing on each individual device. C Those parameters are achieved by the design characterization by measuring a statistically relevant sample size across process variations. T Those parameters are achieved by design characterization on a small sample size from typical devices under typical conditions unless otherwise noted. All values shown in the typical column are within this category. MC9RS08KB12 Series MCU Data Sheet, Rev. 5 6 Freescale Semiconductor Electrical Characteristics Table 2. Parameter Classifications D Those parameters are derived mainly from simulations. NOTE The classification is shown in the column labeled “C” in the parameter tables where appropriate. 3.3 Absolute Maximum Ratings Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the limits specified in Table 3 may affect device reliability or cause permanent damage to the device. For functional operating conditions, refer to the remaining tables in this chapter. This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (for instance, VSS or VDD) or the programmable pull-up resistor associated with the pin is enabled. Table 3. Absolute Maximum Ratings Rating Symbol Value Unit Supply voltage VDD –0.3 to 5.8 V Maximum current into VDD IDD 120 mA Digital input voltage VIn –0.3 to VDD + 0.3 V Instantaneous maximum current Single pin limit (applies to all port pins)1, 2, 3 ID ±25 mA Tstg –55 to 150 °C Storage temperature range 1 Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive (VDD) and negative (VSS) clamp voltages, then use the larger of the two resistance values. 2 All functional non-supply pins are internally clamped to V SS and VDD except the RESET/VPP pin which is internally clamped to VSS only. 3 Power supply must maintain regulation within operating V DD range during instantaneous and operating maximum current conditions. If positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could result in external power supply going out of regulation. Ensure external VDD load will shunt current greater than maximum injection current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is present, or if the clock rate is very low which would reduce overall power consumption. 3.4 Thermal Characteristics This section provides information about operating temperature range, power dissipation, and package thermal resistance. Power dissipation on I/O pins is usually small compared to the power dissipation in on-chip logic and voltage regulator circuits and it is user-determined rather than being controlled by the MCU design. In order to take PI/O into account in power calculations, determine the difference between actual pin voltage and VSS or VDD and multiply by the pin current for each I/O pin. Except in cases of MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 7 Electrical Characteristics unusually high pin current (heavy loads), the difference between pin voltage and VSS or VDD will be very small. Table 4. Thermal Characteristics Rating Symbol Value Unit TA TL to TH –40 to 85 °C Maximum junction temperature TJMAX 150 °C Thermal resistance 24-pin QFN θJA 113 °C/W Thermal resistance 20-pin SOIC θJA 83 °C/W Thermal resistance 16-pin SOIC NB θJA 103 °C/W Thermal resistance 16-pin TSSOP θJA 29 °C/W Thermal resistance 8-pin SOIC θJA 150 °C/W Thermal resistance 8-pin DFN θJA 110 °C/W Operating temperature range (packaged) The average chip-junction temperature (TJ) in °C can be obtained from: TJ = TA + (PD × θJA) Eqn. 1 where: TA = Ambient temperature, °C θJA = Package thermal resistance, junction-to-ambient, °C /W PD = Pint + PI/O Pint = IDD × VDD, Watts chip internal power PI/O = Power dissipation on input and output pins user determined For most applications, PI/O 2.3 V) (all digital inputs) VIL — — 0.30 × VDD V 8 C Input low voltage (1.8 V ≤ VDD ≤ 2.3 V) (all digital inputs) VIL — — 0.30 × VDD V 9 C Input hysteresis (all digital inputs) Vhys1 0.06 × VDD — — V 10 P Input leakage current (per pin) VIn = VDD or VSS, all input only pins |IIn| — 0.025 1.0 μA 11 P High impedance (off-state) leakage current (per pin) VIn = VDD or VSS, all input/output |IOZ| — 0.025 1.0 μA 12 P Internal pullup resistors2(all port pins) RPU 20 45 65 kΩ 13 P Internal pulldown resistors2(all port pins) RPD 20 45 65 kΩ VDD – 0.8 — — — — — — — — — — — — — 40 14 15 C C Output high voltage — Low drive (PTxDSn = 0) 5 V, ILoad = 2 mA 3 V, ILoad = 1 mA 1.8 V, ILoad = 0.5 mA Output high voltage — High drive (PTxDSn = 1) 5 V, ILoad = 5 mA 3 V, ILoad = 3 mA 1.8 V, ILoad = 2 mA Maximum total IOH for all port pins VOH VDD – 0.8 |IOHT| — V mA MC9RS08KB12 Series MCU Data Sheet, Rev. 5 10 Freescale Semiconductor Electrical Characteristics Table 7. DC Characteristics (Temperature Range = –40 to 85°C Ambient) (continued) No. 16 17 C C C Parameter Symbol Output low voltage — Low drive (PTxDSn = 0) 5 V, ILoad = 2 mA 3 V, ILoad = 1 mA 1.8 V, ILoad = 0.5 mA Min Typical Max — — — — — — 0.8 — — — — — — 0.8 — — 40 mA — — — — 0.2 0.8 mA — — 7 pF VOL Output low voltage — High drive (PTxDSn = 1) 5 V, ILoad = 5 mA 3 V, ILoad = 3 mA 1.8 V, ILoad = 2 mA IOLT Maximum total IOL for all port pins Unit V 3 , 4 , 5 ,6 18 19 1 2 3 4 5 6 C C DC injection current VIn < VSS, VIn > VDD Single pin limit Total MCU limit, includes sum of all stressed pins CIn Input capacitance (all non-supply pins) This parameter is characterized and not tested on each device. Measurement condition for pull resistors: VIn = VSS for pullup and VIn = VDD for pulldown. All functional non-supply pins are internally clamped to VSS and VDD except the RESET/VPP which is internally clamped to VSS only. Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive and negative clamp voltages, then use the larger of the two values. Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive and negative clamp voltages, then use the larger of the two values. This parameter is characterized and not tested on each device. VOH vs. IOH (High Drive) at Vdd=5.5V 5.60 5.40 VOH (V) 5.20 85C 5.00 25C 4.80 -40C 4.60 4.40 4.20 1 2 3 4 5 6 7 8 9 11 13 15 17 IOH (mA) Figure 6. Typical VOH vs. IOH VDD = 5.5 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 11 Electrical Characteristics VOH vs. IOH (Low Drive) at Vdd=5.5V 6.00 VOH (V) 5.00 4.00 85C 25C 3.00 -40C 2.00 1.00 0.00 1 2 3 4 5 6 IOH (mA) Figure 7. Typical VOH vs. IOH VDD = 5.5 V (Low Drive) VOH vs. IOH (High Drive) at Vdd=3.0V 3.50 3.00 VOH (V) 2.50 85C 2.00 25C 1.50 -40C 1.00 0.50 0.00 1 2 3 4 5 6 7 8 9 10 IOH (mA) Figure 8. Typical VOH vs. IOH VDD = 3.0 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 12 Freescale Semiconductor Electrical Characteristics VOH vs. IOH (Low Drive) at Vdd=3.0V 3.00 VOH (V) 2.50 2.00 85C 1.50 25C -40C 1.00 0.50 0.00 1 2 IOH (mA) Figure 9. Typical VOH vs. IOH VDD = 3.0 V (Low Drive) VOH vs. IOH (High Drive) at Vdd=1.8V VOH (V) 1.80 1.60 1.40 1.20 85C 1.00 0.80 25C -40C 0.60 0.40 0.20 0.00 1 2 3 IOH (mA) Figure 10. Typical VOH vs. IOH VDD = 1.8 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 13 Electrical Characteristics VOH (V) VOH vs. IOH (Low Drive) at Vdd=1.8V 1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 85C 25C -40C 0.3 0.4 0.5 0.6 0.7 IOH (mA) Figure 11. Typical VOH vs. IOH VDD = 1.8 V (Low Drive) VOL vs. IOL (High Drive) at Vdd=5.5V 800.00 700.00 VOL (mV) 600.00 500.00 VOL @85C 400.00 VOL @25C 300.00 VOL @-40C 200.00 100.00 0.00 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 IOL (mA) Figure 12. Typical VOL vs. IOL VDD = 5.5 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 14 Freescale Semiconductor Electrical Characteristics VOL vs. IOL (Low Drive) at Vdd=5.5V 2500.00 VOL (mV) 2000.00 VOL @85C 1500.00 VOL @25C 1000.00 VOL @-40C 500.00 0.00 1 2 3 4 5 6 7 8 9 10 11 IOL (mA) Figure 13. Typical VOL vs. IOL VDD = 5.5 V (Low Drive) VOL vs. IOL (High Drive) at Vdd=3.0V 1200.00 VOL (mV) 1000.00 800.00 VOL @85C 600.00 VOL @25C VOL @-40C 400.00 200.00 0.00 1 2 3 4 5 6 7 8 9 10 11 IOL (mA) Figure 14. Typical VOL vs. IOL VDD = 3.0 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 15 Electrical Characteristics VOL (mV) VOL vs. IOL (Low Drive) at Vdd=3.0V 1000.00 900.00 800.00 700.00 600.00 500.00 400.00 300.00 200.00 100.00 0.00 VOL @85C VOL @25C VOL @-40C 1 2 3 IOL (mA) Figure 15. Typical VOL vs. IOL VDD = 3.0 V (Low Drive) VOL vs. IOL (High Drive) at Vdd=1.8V 800.00 700.00 VOL (mV) 600.00 500.00 VOL @85C 400.00 VOL @25C 300.00 VOL @-40C 200.00 100.00 0.00 0.8 1 2 3 4 IOL (mA) Figure 16. Typical VOL vs. IOL VDD = 1.8 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 16 Freescale Semiconductor Electrical Characteristics VOL vs. IOL (Low Drive) at Vdd=1.8V 400.00 350.00 VOL (mV) 300.00 250.00 VOL @85C 200.00 VOL @25C 150.00 VOL @-40C 100.00 50.00 0.00 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IOL (mA) Figure 17. Typical VOL vs. IOL VDD = 1.8 V (Low Drive) VOH vs. IOH (High Drive) at Vdd=5.5V 5.60 5.40 VOH (V) 5.20 85C 5.00 25C 4.80 -40C 4.60 4.40 4.20 1 2 3 4 5 6 7 8 9 11 13 15 17 IOH (mA) Figure 18. Typical IOH vs. VDD–VOH VDD = 5.5 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 17 Electrical Characteristics IOH vs VDD-VOH (Low Drive) at VDD = 5.5 V VDD-VOH (V) -12 IOH (mA) -10 -8 85C 25C - 40C -6 -4 -2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Figure 19. Typical IOH vs. VDD–VOH VDD = 5.5 V (Low Drive) IOH vs VDD-VOH (High Drive) at VDD = 3.0 V VDD-VOH (V) -25 IOH (mA) -20 85C 25C - 40C -15 -10 -5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Figure 20. Typical IOH vs. VDD–VOH VDD = 3 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 18 Freescale Semiconductor Electrical Characteristics IOH vs VDD-VOH (Low Drive) at VDD = 3.0 V IOH (mA) VDD-VOH (V) -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 85C 25C - 40C 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Figure 21. Typical IOH vs. VDD–VOH VDD = 3 V (Low Drive) IOH vs VDD-VOH (High Drive) at VDD = 1.8 V VDD-VOH (V) -7 IOH (mA) -6 -5 85C 25C - 40C -4 -3 -2 -1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Figure 22. Typical IOH vs. VDD–VOH VDD = 1.8 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 19 Electrical Characteristics IOH vs VDD-VOH (Low Drive) at VDD = 1.8 V VDD-VOH (V) -1.4 IOH (mA) -1.2 -1 85C 25C - 40C -0.8 -0.6 -0.4 -0.2 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Figure 23. Typical IOH vs. VDD–VOH VDD = 1.8 V (Low Drive) IOL vs VOL (High Drive) at VDD = 5.5 V 60.00 IOL (mA) 50.00 40.00 85C 30.00 25C - 40C 20.00 10.00 0.00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VOL (V) Figure 24. Typical IOL vs. VOL VDD = 5.5 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 20 Freescale Semiconductor Electrical Characteristics IOL vs VOL (Low Drive) at VDD = 5.5 V 16.00 14.00 IOL (mA) 12.00 10.00 85C 25C - 40C 8.00 6.00 4.00 2.00 0.00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VOL (V) Figure 25. Typical IOL vs. VOL VDD = 5.5 V (Low Drive) IOL (mA) IOL vs VOL (High Drive) at VDD = 3.0 V 20.00 18.00 16.00 14.00 12.00 10.00 8.00 6.00 4.00 2.00 0.00 85C 25C - 40C 0.2 0.4 0.6 0.8 1 1.2 1.4 VOL (V) Figure 26. Typical IOL vs. VOL VDD = 3 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 21 Electrical Characteristics IOL vs VOL (Low Drive) at VDD = 3.0 V 6.00 IOL (mA) 5.00 4.00 85C 25C - 40C 3.00 2.00 1.00 0.00 0.2 0.4 0.6 0.8 1 1.2 1.4 VOL (V) Figure 27. Typical IOL vs. VOL VDD = 3 V (Low Drive) IOL vs VOL (High Drive) at VDD = 1.8 V 6.00 IOL (mA) 5.00 4.00 85C 25C - 40C 3.00 2.00 1.00 0.00 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VOL (V) Figure 28. Typical IOL vs. VOL VDD = 1.8 V (High Drive) MC9RS08KB12 Series MCU Data Sheet, Rev. 5 22 Freescale Semiconductor Electrical Characteristics IOL vs VOL (Low Drive) at VDD = 1.8 V 1.60 1.40 IOL (mA) 1.20 1.00 85C 25C - 40C 0.80 0.60 0.40 0.20 0.00 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VOL (V) Figure 29. Typical IOL vs. VOL VDD = 1.8 V (Low Drive) 3.7 Supply Current Characteristics Table 8. Supply Current Characteristics VDD (V) Typical Max1 Temp. (°C) 5 3.45 3.48 3.53 7 –40 25 85 3 3.39 3.42 3.49 — –40 25 85 C 1.80 2.40 2.42 2.44 — –40 25 85 4 C 5 0.93 0.96 0.99 — –40 25 85 5 T 3 0.91 0.92 0.92 — –40 25 85 6 T 1.80 0.66 0.67 0.68 — –40 25 85 N C 1 P 2 C 3 Parameter Symbol Run supply current2 measured at (fBus = 10 MHz) Run supply current3 measured at (fBus = 1.25 MHz) RIDD10 RIDD1 Unit mA mA MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 23 Electrical Characteristics Table 8. Supply Current Characteristics (continued) N C 7 C Parameter Symbol Wait mode supply current3 measured at (fBus = 2.00 MHz) Typical Max1 Temp. (°C) 5 841.13 859.98 873.69 — –40 25 85 3 840.21 850.60 846.67 — –40 25 85 8 T 9 T 1.80 630.64 635.10 643.67 — –40 25 85 10 C 5 667.86 683.38 688.02 — –40 25 85 3 666.34 672.79 669.15 — –40 25 85 Wait mode supply current3 measured at (fBus = 1.00 MHz) WIDD2 VDD (V) 11 T 12 T 1.80 505.39 509.28 502.52 — –40 25 85 13 P 5 1.15 1.40 7.67 11 –40 25 85 14 C 3 1.05 1.26 4.52 — –40 25 85 15 C 1.80 0.39 0.56 4.21 — –40 25 85 16 C 5 128.86 140.44 154.97 — –40 25 85 17 T 3 102.98 111.71 118.33 — –40 25 85 18 T 1.80 54.77 66.33 74.42 — –40 25 85 19 C 5 14.43 15.96 16.77 — –40 25 85 20 T 3 14.37 14.72 14.45 — –40 25 85 21 T 1.80 13.05 14.02 12.92 — –40 25 85 Stop mode supply current ADC adder from stop3 WIDD1 SIDD — ACMP adder from stop (ACME = 1) — Unit μA μA μA μA μA MC9RS08KB12 Series MCU Data Sheet, Rev. 5 24 Freescale Semiconductor Electrical Characteristics Table 8. Supply Current Characteristics (continued) VDD (V) Typical Max1 Temp. (°C) 5 0.10 0.10 0.17 — –40 25 85 3 0.02 0.06 0.02 — –40 25 85 T 1.80 0.40 0.45 0.20 — –40 25 85 25 T 5 0.70 1.08 1.94 — –40 25 85 26 T 3 0.56 0.56 0.62 — –40 25 85 27 T 1.80 0.70 0.86 0.50 — –40 25 85 28 C 5 58.93 68.27 76.60 — –40 25 85 29 T 3 58.89 61.98 63.45 — –40 25 85 30 T 1.80 52.84 54.52 52.49 — –40 25 85 N C 22 C 23 T 24 Parameter Symbol RTI adder from stop with 1 kHz clock source enabled4 RTI adder from stop with 32.768KHz external clock source reference enabled LVI adder from stop (LVDE = 1 and LVDSE = 1) — — — Unit μA μA μA 1 Maximum value is measured at the nominal VDD voltage times 10% tolerance. Values given here are preliminary estimates prior to completing characterization. 2 Not include any DC loads on port pins. 3 Required asynchronous ADC clock and LVD to be enabled. 4 Most customers are expected to find that auto-wakeup from stop can be used instead of the higher current wait mode. Wait mode typical is 672.79 μA at 3 V and 509.28 μA at 1.8 V with fBus = 1 MHz. MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 25 Electrical Characteristics 3.8 External Oscillator (XOSC) Characteristics Table 9. Oscillator Electrical Specifications (Temperature Range = –40 to 85°C Ambient) Num 1 C C Rating 3 D Feedback resistor Low range (32 kHz to 100 kHz) High range (1 MHz to 16 MHz) D Series resistor Low range, low gain (RANGE = 0, HGO = 0) Low range, high gain (RANGE = 0, HGO = 1) High range, low gain (RANGE = 1, HGO = 0) High range, high gain (RANGE = 1, HGO = 1) ≥ 8 MHz 4 MHz 1 MHz 6 D 32 1 1 1 C1, C2 Load capacitors C flo fhi fhi-hgo fhi-lp D 5 Min Oscillator crystal or resonator (EREFS = 1, ERCLKEN = 1) Low range (RANGE = 0) High range (RANGE = 1) FEE or FBE mode2 High range (RANGE = 1, HGO = 1) FBELP mode High range (RANGE = 1, HGO = 0) FBELP mode 2 4 Symbol RF RS Crystal start-up time3 Low range, low gain (RANGE = 0, HGO = 0) Low range, high gain (RANGE = 0, HGO = 1) High range, low gain (RANGE = 1, HGO = 0)4 High range, high gain (RANGE = 1, HGO = 1)4 Square wave input clock frequency (EREFS = 0, ERCLKEN = 1) FEE or FBE mode2 FBELP mode t t CSTL-LP CSTL-HGO t CSTH-LP t CSTH-HGO fextal Typical1 Max — — — — Unit 38.4 kHz 5 MHz 16 MHz MHz 8 See crystal or resonator manufacturer’s recommendation. — — 10 1 — — — — — 0 100 0 — — — — — — 0 0 0 0 10 20 — — — — 200 400 5 20 — — — — 0.03125 0 — — 5 40 MΩ kΩ ms MHz Typical data was characterized at 5.0 V, 25 °C or is recommended value. The input clock source must be divided using RDIV to within the range of 31.25 kHz to 39.0625 kHz. 3 This parameter is characterized and not tested on each device. Proper PC board layout procedures must be followed to achieve specifications. 4 4 MHz crystal. 1 2 MCU EXTAL XTAL RF C1 3.9 Crystal or Resonator RS C2 AC Characteristics This section describes AC timing characteristics for each peripheral system. MC9RS08KB12 Series MCU Data Sheet, Rev. 5 26 Freescale Semiconductor Electrical Characteristics 3.9.1 Control Timing Table 10. Control Timing Num C 1 D Bus frequency (tcyc = 1/fBus) 2 D Real time interrupt internal oscillator period 3 4 5 D D D Parameter External RESET pulse width 1 2 KBI pulse width KBI pulse width in stop1 Symbol Min Typical Max Unit fBus 0 — 10 MHz tRTI 700 1000 1300 μs textrst 150 — — ns tKBIPW 1.5 tcyc — — ns tKBIPWS 100 — — ns tRise, tFall — — 11 35 — — ns 3 6 D Port rise and fall time (load = 50 pF) Slew rate control disabled (PTxSE = 0) Slew rate control enabled (PTxSE = 1) 1 This is the shortest pulse guaranteed to pass through the pin input filter circuitry. Shorter pulses may or may not be recognized. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or may not be recognized. In stop mode, the synchronizer is bypassed so shorter pulses can be recognized in that case. 3 Timing is shown with respect to 20% V DD and 80% VDD levels. Temperature range –40 °C to 85 °C. 2 textrst RESET Figure 30. Reset Timing tKBIPWS tKBIPW KBI Pin (rising or high level) KBI Pin (falling or low level) tKBIPW tKBIPWS Figure 31. KBI Pulse Width MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 27 Electrical Characteristics 3.9.2 TPM/MTIM Module Timing Synchronizer circuits determine the shortest input pulses that can be recognized or the fastest clock that can be used as the optional external source to the timer counter. These synchronizers operate from the current bus rate clock. Table 11. TPM Input Timing Num C Rating Symbol Min Max Unit 1 D External clock frequency fTPMext DC fBus/4 MHz 2 D External clock period tTPMext 4 — tcyc 3 D External clock high time tclkh 1.5 — tcyc 4 D External clock low time tclkl 1.5 — tcyc 5 D Input capture pulse width tICPW 1.5 — tcyc tTCLK tclkh TCLK tclkl Figure 32. Timer External Clock tICPW TPMCHn TPMCHn tICPW Figure 33. Timer Input Capture Pulse 3.10 Analog Comparator (ACMP) Electrical Table 12. Analog Comparator Electrical Specifications Num C Characteristic 1 D Supply voltage 2 P Supply current (active) 3 D Analog input voltage1 voltage1 Symbol Min Typical Max Unit VDD 1.80 — 5.5 V IDDAC — 20 35 μA VAIN VSS – 0.3 — VDD V 4 C Analog input offset 5 C Analog Comparator hysteresis1 6 C Analog source impedance1 7 P Analog input leakage current 8 C Analog Comparator initialization delay tAINIT VAIO — 20 40 mV VH 3.0 9.0 15.0 mV RAS — — 10 kΩ IALKG — — 1.0 μA — — 1.0 μs MC9RS08KB12 Series MCU Data Sheet, Rev. 5 28 Freescale Semiconductor Electrical Characteristics Table 12. Analog Comparator Electrical Specifications (continued) 1 Num C Characteristic Symbol Min Typical Max Unit 9 P Analog Comparator bandgap reference voltage VBG 1.1 1.208 1.3 V These data are characterized but not production tested. 3.11 Internal Clock Source Characteristics Table 13. Internal Clock Source Specifications Characteristic Symbol Typical1 Num C 1 C Average internal reference frequency — untrimmed fint_ut 25 31.25 41.66 kHz 2 P Average internal reference frequency — trimmed fint_t 31.25 32.768 39.0625 kHz 3 C DCO output frequency range — untrimmed fdco_ut 12.8 16 21.33 MHz 4 P DCO output frequency range — trimmed fdco_t 16 16.77 20 MHz 5 C Resolution of trimmed DCO output frequency at fixed voltage and temperature Δfdco_res_t — — 0.2 %fdco 6 C Total deviation of trimmed DCO output frequency over voltage and temperature Δfdco_t — — 2 %fdco 7 C FLL acquisition time2,3 tacquire — — 1 ms 8 C t_wakeup — — μs Stop recovery time (FLL wakeup to previous acquired frequency) IREFSTEN = 0 IREFSTEN = 1 Min Max Unit 100 86 Data in typical column was characterized at 3.0 V and 5.0 V, 25 °C or is typical recommended value. This parameter is characterized and not tested on each device. 3 This specification applies to any time the FLL reference source or reference divider is changed, trim value changed or changing from FLL disabled (FBILP) to FLL enabled (FEI, FBI). 1 2 3.12 ADC Characteristics Table 14. 10-Bit ADC Operating Conditions Symb Min Typ1 Max Unit VDDAD 1.8 — 5.5 V Input voltage VADIN VREFL — VREFH V Input capacitance CADIN — 4.5 5.5 pF Input resistance RADIN — 3 5 kΩ — — — — 5 10 — — 10 Characteristic Supply voltage Analog source resistance Conditions Absolute 10-bit mode fADCK > 4MHz fADCK < 4MHz 8-bit mode (all valid fADCK) RAS kΩ Comment External to MCU MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 29 Electrical Characteristics Table 14. 10-Bit ADC Operating Conditions (continued) Characteristic ADC conversion clock Freq. 1 Conditions High speed (ADLPC=0) Symb Min Typ1 Max Unit fADCK 0.4 — 8.0 MHz 0.4 — 4.0 Low power (ADLPC=1) Comment Typical values assume VDDAD = 5.0 V, Temp = 25 °C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference only and are not tested in production. SIMPLIFIED INPUT PIN EQUIVALENT CIRCUIT ZADIN SIMPLIFIED CHANNEL SELECT CIRCUIT Pad leakage due to input protection ZAS RAS ADC SAR ENGINE RADIN + VADIN VAS + – – CAS RADIN INPUT PIN RADIN INPUT PIN RADIN INPUT PIN CADIN Figure 34. ADC Input Impedance Equivalency Diagram Table 15. 10-Bit ADC Characteristics (VREFH = VDDAD, VREFL = VSSAD, 2.7 V < VDDAD < 5.5 V) Symb Min Typ1 Max Unit Supply Current ADLPC = 1 ADLSMP = 1 ADCO = 1 IDDAD — 133 — μA T Supply Current ADLPC = 1 ADLSMP = 0 ADCO = 1 IDDAD — 218 — μA T Supply Current ADLPC = 0 ADLSMP = 1 ADCO = 1 IDDAD — 327 — μA C Characteristic T Conditions Comment MC9RS08KB12 Series MCU Data Sheet, Rev. 5 30 Freescale Semiconductor Electrical Characteristics Table 15. 10-Bit ADC Characteristics (VREFH = VDDAD, VREFL = VSSAD, 2.7 V < VDDAD < 5.5 V) C Characteristic C Supply Current ADLPC = 0 ADLSMP = 0 ADCO = 1 C ADC Asynchronous Clock Source High Speed (ADLPC = 0) Conversion Time (Including sample time) Short Sample (ADLSMP = 0) Long Sample (ADLSMP = 1) Sample Time Short Sample (ADLSMP = 0) D D C T Conditions Symb Min Typ1 Max Unit IDDAD — 0.582 1 mA fADACK 2 3.3 5 MHz 1.25 2 3.3 tADACK = 1/fADACK — 20 — — 40 — ADCK cycles — 3.5 — See reference manual for conversion time variances — 23.5 — — ±1.5 ±3.5 — ±0.7 ±1.5 — ±0.5 ±1.0 — ±0.3 ±0.5 Low Power (ADLPC = 1) tADC tADS Long Sample (ADLSMP = 1) Total Unadjusted Error Differential Non-Linearity 10-bit mode ETUE 8-bit mode 10-bit mode DNL 8-bit mode ADCK cycles LSB2 Comment Includes quantization LSB2 Monotonicity and No-Missing-Codes guaranteed C P P Integral Non-Linearity 10-bit mode INL 8-bit mode Zero-Scale Error 10-bit mode Full-Scale Error 10-bit mode EZS 8-bit mode EFS 8-bit mode D D Quantization Error 10-bit mode Input Leakage Error 10-bit mode EQ 8-bit mode 8-bit mode EIL — ±0.5 ±1.0 — ±0.3 ±0.5 — ±1.5 ±2.5 — ±0.5 ±0.7 — ±1 ±1.5 — ±0.5 ±0.5 — — ±0.5 — — ±0.5 — ±0.2 ±2.5 — ±0.1 ±1 LSB2 LSB2 VADIN = VSSA LSB2 VADIN = VDDA LSB2 LSB2 Pad leakage2 * RAS Typical values assume VDDAD = 5.0 V, Temp = 25 °C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference only and are not tested in production. 2 Based on input pad leakage current. Refer to pad electricals. 1 MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 31 Electrical Characteristics Table 16. 10-Bit ADC Characteristics (VREFH = VDDAD, VREFL = VSSAD, 1.8 V < VDDAD < 2.7 V) Symb Min Typ1 Max Unit 8-bit mode IDDAD — 88 — μA Supply Current ADLPC = 1 ADLSMP = 0 ADCO = 1 8-bit mode IDDAD — 152 — μA T Supply Current ADLPC = 0 ADLSMP = 1 ADCO = 1 8-bit mode IDDAD — 214 — μA T Supply Current ADLPC = 0 ADLSMP = 0 ADCO = 1 8-bit mode IDDAD — 390 — μA C ADC Asynchronous Clock Source High Speed (ADLPC = 0) fADACK 2 3.3 5 MHz 1.25 2 3.3 tADACK = 1/fADACK Conversion Time (Including sample time) Short Sample (ADLSMP = 0) — 20 — Long Sample (ADLSMP = 1) — 40 — ADCK cycles Sample Time Short Sample (ADLSMP = 0) — 3.5 — See reference manual for conversion time variances — 23.5 — — — — — ±3.5 — — — — — ±1.0 — C Characteristic T Supply Current ADLPC = 1 ADLSMP = 1 ADCO = 1 T D D C T Conditions Low Power (ADLPC = 1) tADC tADS Long Sample (ADLSMP = 1) Total Unadjusted Error Differential Non-Linearity 10-bit mode ETUE 8-bit mode 10-bit mode DNL 8-bit mode ADCK cycles LSB2 Comment Includes quantization LSB2 Monotonicity and No-Missing-Codes guaranteed C C C Integral Non-Linearity 10-bit mode INL 8-bit mode Zero-Scale Error 10-bit mode Full-Scale Error 10-bit mode EZS 8-bit mode EFS 8-bit mode D Quantization Error 10-bit mode 8-bit mode EQ — — — — ±1.5 — — — — — ±1.5 — — — — — ±1.0 — — — — — — ±0.5 LSB2 LSB2 VADIN = VSSA LSB2 VADIN = VDDA LSB2 MC9RS08KB12 Series MCU Data Sheet, Rev. 5 32 Freescale Semiconductor Electrical Characteristics Table 16. 10-Bit ADC Characteristics (VREFH = VDDAD, VREFL = VSSAD, 1.8 V < VDDAD < 2.7 V) C Characteristic D Input Leakage Error Conditions 10-bit mode Symb Min Typ1 Max Unit Comment EIL — — — LSB2 — ±0.1 ±1 Pad leakage2 * RAS 8-bit mode Typical values assume VDDAD = 1.8 V, Temp = 25 °C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference only and are not tested in production. 2 Based on input pad leakage current. Refer to pad electricals. 1 3.13 Flash Specifications This section provides details about program/erase times and program-erase endurance for the flash memory. For detailed information about program/erase operations, see the reference manual. Table 17. Flash Characteristics No. C Characteristic Symbol Min Typical1 Max Unit 1 D Supply voltage for program/erase VDD 2.7 — 5.5 V 2 D Program/Erase voltage VPP 11.8 12 12.2 V 3 C VPP current Program Mass erase IVPP_prog IVPP_erase — — — — 200 100 μA μA 4 D Supply voltage for read operation 0 < fBus < 10 MHz VRead 1.8 — 5.5 V 5 P Byte program time tprog 20 — 40 μs 6 P Mass erase time tme 500 — — ms 7 C Cumulative program HV time2 thv — — 8 ms 8 C Total cumulative HV time (total of tme & thv applied to device) thv_total — — 2 hours 9 D HVEN to program setup time tpgs 10 — — μs 10 D PGM/MASS to HVEN setup time tnvs 5 — — μs 11 D HVEN hold time for PGM tnvh 5 — — μs 12 D HVEN hold time for MASS tnvh1 100 — — μs 13 D VPP to PGM/MASS setup time tvps 20 — — ns 14 D HVEN to VPP hold time tvph 20 — — ns time3 15 D VPP rise tvrs 200 — — ns 16 D Recovery time trcv 1 — — μs 17 D Program/erase endurance TL to TH = –40 °C to 85 °C — 1000 — — cycles 18 C Data retention tD_ret 15 — — years Typicals are measured at 25 °C. thv is the cumulative high voltage programming time to the same row before next erase. Same address can not be programmed more than twice before next erase. 3 Fast V PP rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad and cause permanent damage to the pad. External filtering for the VPP power source is recommended. An example VPP filter is shown in Figure 35. 1 2 MC9RS08KB12 Series MCU Data Sheet, Rev. 5 Freescale Semiconductor 33 Electrical Characteristics 100 Ω VPP 1 nF 12 V Figure 35. Example VPP Filtering tprog WRITE DATA1 Data Next Data tpgs PGM tnvs tnvh trcv HVEN trs VPP2 tvps tvph thv 1 Next Data applies if programming multiple bytes in a single row, refer to MC9RS08KB12 Series Reference Manual. 2 V DD must be at a valid operating voltage before voltage is applied or removed from the VPP pin. Figure 36. Flash Program Timing tme trcv MASS tnvs tnvh1 HVEN trs VPP1 1V DD tvps tvph must be at a valid operating voltage before voltage is applied or removed from the VPP pin. Figure 37. Flash Mass Erase Timing MC9RS08KB12 Series MCU Data Sheet, Rev. 5 34 Freescale Semiconductor 3.14 EMC Performance Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board design and layout, circuit topology choices, location and characteristics of external components as well as MCU software operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance. 3.14.1 Radiated Emissions Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller are measured in a TEM cell in two package orientations (North and East). Ordering Information 4 Ordering Information This section contains ordering numbers for MC9RS08KB12 series devices. See below for an example of the device numbering system. MC 9 RS08 KB 12 C XX Status (MC = Fully qualified) (PC = Prototype) Memory (9 = Flash-Based) Core Package designator (See Table 18) Temperature range (C = –40 °C to 85 °C) Approximate memory size (in KB) Family 5 Package Information and Mechanical Drawings Table 18 provides the available package types and their document numbers. The latest package outline/mechanical drawings are available on the MC9RS08KB12 Series Product Summary pages at http://www.freescale.com. To view the latest drawing, either: • Click on the appropriate link in Table 18, or • Open a browser to the Freescale® website (http://www.freescale.com), and enter the appropriate document number (from Table 18) in the “Enter Keyword” search box at the top of the page. Table 18. Device Numbering System Memory Package Device Number MC9RS08KB12 MC9RS08KB8 MC9RS08KB4 MC9RS08KB2 Flash RAM 12 KB 8 KB 4 KB 254 bytes 254 bytes 126 bytes 2 KB 126 bytes Type Designator Document No. 24 QFN FK 98ASA00087D 20 SOIC WB WJ 98ASB42343B 16 SOIC NB SG 98ASB42566B 16 TSSOP TG 98ASH70247A 8 SOIC NB SC 98ASB42564B 8 DFN DC 98ARL10557D MC9RS08KB12 Series MCU Data Sheet, Rev. 5 36 Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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